SKM 600GA176D
Absolute Maximum Ratings
Symbol Conditions
IGBT
3 2( 1
%
3 0(, 1
%78
2(1" '
Trench IGBT Modules
SKM 600GA176D
Units
0),,
2( 1
##,
&
5, 1
6),
&
5,,
&
: 2,
0,
=
2( 1
#,,
&
5, 1
60,
&
5,,
&
@5,,
&
(,,
&
* 6, ??? A0(,
1
* 6, ??? A02(
1
6,,,
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9
SEMITRANS® 4
Values
02,, ; 9 / 2, ; 3 02( 1
< 0),, Inverse Diode
%>
3 0(, 1
%>78
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%>8
0, ; ?
3 0(, 1
Module
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3
Features
!" # $ %
Typical Applications*
& ' ()( *
)+, &
-! $
Remarks
%. / (,, & ' 0,,1
&" 0 ?
Characteristics
Symbol Conditions
IGBT
9
9 " % 0# &
%
9 , " ,
9 0( 2(1" '
min.
typ.
max.
Units
("2
("5
#"6
6
&
3 2( 1
0
0"2
3 02( 1
,"+
0"0
3 2(1
2"(
@"0
B
3 02(1
@"+
6"(
B
2
2"6(
2"6(
2"+
3 2( 1
%
6,, &" 9 0( 3 2(1?
3 02(1?
25"6
0"6#
>
>
0"0)
>
'
' 2+,
),
2((
5+,
0#,
D
0((
D
2(" 9 , 79
@ B
79 @ B
73*
%9E
0 8C
02,,
% 6,,&
3 02( 1
9 :0(
,",66
FGH
GA
1
28-06-2010 GIL
© by SEMIKRON
SKM 600GA176D
Characteristics
Symbol Conditions
Inverse Diode
> SEMITRANS® 4
Trench IGBT Modules
%>
6,, &; 9 , min.
typ.
max.
Units
3 2( 1?
0"#
0"+
3 02( 1?
0"#
0"+
>,
3 2( 1
0"0
0"@
>
3 2( 1
0"@
0"(
B
3 02( 1
(0,
0((
&
=
0,2
D
%778
I
%> 6,, &
'G' (),, &G=
9 *0( ; 02,,
73*.
''
,",+
FGH
Module
J
SKM 600GA176D
7KAK
0(
?" *
7*
'
8
L 8#
8
8# 86
2,
2( 1
,"05
B
02( 1
,"22
B
,",@5
FGH
@
(
M
2"( 0"0
( 2
M
@@,
Features
This is an electrostatic discharge sensitive device (ESDS), international standard
!" # $ %
Typical Applications*
& ' ()( *
)+, &
-! $
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
Remarks
%. / (,, & ' 0,,1
GA
2
28-06-2010 GIL
© by SEMIKRON
SKM 600GA176D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
28-06-2010 GIL
© by SEMIKRON
SKM 600GA176D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovered charge
4
28-06-2010 GIL
© by SEMIKRON
SKM 600GA176D
UL Recognized
File no. 63 532
. (+
9&
5
.(+
28-06-2010 GIL
© by SEMIKRON