SKM 100GB176D
Absolute Maximum Ratings
Symbol Conditions
IGBT
0 .( /
%
0 2(+ /
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SEMITRANS® 2
Trench IGBT Modules
SKM 100GB176D
2)++
2.(
&
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4+
&
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&
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2.++ 9 7 : .+ 9 0 2.( /
; 2)++ Inverse Diode
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Module
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Features
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Typical Applications*
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Units
.( /
7
Values
&" 2 -
Characteristics
Symbol Conditions
IGBT
7
7 " % @ &
%
7 + " +
7 2( %
)( &" 7 2( .(" 7 + .(/" '
min.
typ.
max.
Units
(".
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2
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GB
1
28-06-2010 GIL
© by SEMIKRON
SKM 100GB176D
Characteristics
Symbol Conditions
Inverse Diode
= %=
)( &9 7 + =+
=
®
SEMITRANS 2
Trench IGBT Modules
%556
C
%= )( &
'D' 2#(+ &D<
7 *2( 9 2.++ 50*K
''
min.
typ.
max.
Units
0 .( /-
2"#
2"4
0 2.( /-
2"#
2"4
0 .( /
2"2
2"@
0 2.( /
+"4
2"2
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3
A
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22
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F
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SKM 100GB176D
+">(
5L?L
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A
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2
A
5*
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6
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6
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N
(
N
2#+
Features
This is an electrostatic discharge sensitive device (ESDS), international standard
!" # $ %
Typical Applications*
& ' ()( *
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,! $ -
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our staff.
GB
2
28-06-2010 GIL
© by SEMIKRON
SKM 100GB176D
®
SEMITRANS 2
Trench IGBT Modules
SKM 100GB176D
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
5
5
5
5
2
.
@
>
2
.
@
2#+
#+
2#"(
@"(
+"2+(#
+"++4
+"++22
MDJ
MDJ
MDJ
MDJ
>
+"+++(
5
5
5
5
2
.
@
>
2
.
@
.)+
2@4
@)
>
+"+>)(
+"+2+>
+"++22
MDJ
MDJ
MDJ
MDJ
>
+"+++@
Zth(j-c)D
Features
!" # $ %
Typical Applications*
& ' ()( *
)(+ &
,! $ -
GB
3
28-06-2010 GIL
© by SEMIKRON
SKM 100GB176D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
28-06-2010 GIL
© by SEMIKRON
SKM 100GB176D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovered charge
5
28-06-2010 GIL
© by SEMIKRON
SKM 100GB176D
UL Recognized
File no. E 63 532
K #2
7H
6
K #2
28-06-2010 GIL
© by SEMIKRON