SKM 195GB066D Absolute Maximum Ratings Symbol Conditions IGBT 0 ,- . & 0 +9- . &4; ,-.# !( $22 ,$- ' :2 . ,22 ' <22 ' = ,2 0 +-2 . $ A ,- . ,22 ' :2 . +>2 ' <22 ' +<22 ' ,22 ' 8 <2 /// C +9- . 8 <2 /// C +,- . <222 &4;,%& SEMITRANS® 2 Trench IGBT Modules SKM195GB066D >$2 ? 5 1 +- ? @ $22 Inverse Diode &B 0 +9- . &B4; &B4;,%&B &B; +2 ? / 0 +9- . Module &4; 0 Features !! "# ! $ % & Typical Applications* ' ( )* ( Remarks ( +,-. %/# ( / ( ! 0 1+-2. (3 ) ! ! 45 6 7 ! 8 ( " (/ Units ,- . 5 Values '# + / Characteristics Symbol Conditions IGBT 5 5 # & >#, ' & 5 2 # 2 5 +- ,-.# !( min. typ. max. Units - -#: $#- 0 ,- . 2#+> 2#>: ' 0 ,- . 2#D + 0 +-2 . 2#:- 2#D 0 ,-. ,#: <#- E 0 +-2. <#> $ E +#<- +#D 0 +-2./ +#9 ,#+ ! + ;F +,#> 2#99 B B 2#>9 B +-22 & ,22 '# 5 +- 0 ,-./ ,-# 5 2 G5 5 8:///C+- 45 0 . ( (!! ! 45 > E 45!! > E !! 408 &5K >22 & ,22' 0 +-2 . 5 8:JC+- , H +$2 $: +< -,2 <D I : I 2#,, LJM GB 1 22-03-2011 GIL © by SEMIKRON SKM 195GB066D Characteristics Symbol Conditions Inverse Diode B &B ,22 '? 5 2 B2 B SEMITRANS® 2 Trench IGBT Modules SKM195GB066D &44; G &B ,22 ' (J( ,222 'JA 5 8: ? >22 408N (( !! "# ! $ % & Typical Applications* ' ( )* ( Remarks ( typ. max. Units 0 ,- ./ +#< +#$ 0 ,- . 2#D- + 0 ,- . ,#> > E 0 +-2 . +22 >2 ' A -#$ I 2#< LJM Module O 4PCP >2 /# 8 ,- . 2#9- E +,- . + E 48 ( 2#2- LJM ; 7 ;$ > - Q ; ;- ,#- - Q +-2 Features min. This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. +,-. %/# ( / ( ! 0 1+-2. (3 ) ! ! 45 6 7 ! 8 ( " (/ GB 2 22-03-2011 GIL © by SEMIKRON SKM 195GB066D ® SEMITRANS 2 Trench IGBT Modules SKM195GB066D Zth Symbol Zth(j-c)l Conditions Values Units 4 4 4 4 + , > < + , > +$2 <+ +$ > 2#2,9$ 2#2<2$ 2#22+ 7JM 7JM 7JM 7JM < 2#22++ 4 4 4 4 + , > < + , > ,-2 ++2 >2#2-< 2#2+, 2#22+- 7JM 7JM 7JM 7JM < 2#2229 Zth(j-c)D Features !! "# ! $ % & Typical Applications* ' ( )* ( Remarks ( +,-. %/# ( / ( ! 0 1+-2. (3 ) ! ! 45 6 7 ! 8 ( " (/ GB 3 22-03-2011 GIL © by SEMIKRON SKM 195GB066D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 22-03-2011 GIL © by SEMIKRON SKM 195GB066D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT and Diode Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovered charge 5 22-03-2011 GIL © by SEMIKRON SKM 195GB066D UL recognized, file no. E 63 532 N $+ 5K 6 N $+ 22-03-2011 GIL © by SEMIKRON