Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MMBT1815
NPN SILICON TRANSISTOR
HIGH FREQUENCY NPN
AMPLIFIER TRANSISTOR

*
*
*
*
FEATURES
Collector-Emitter Voltage: BVCEO=50V
Collector Current up to 150mA
High hFE Linearity
Complement to MMBT1015
ORDERING INFORMATION

Ordering Number
Note:

MMBT1815G-x-AC3-R
MMBT1815G-x-AE3-R
MMBT1815G-x-AL3-R
MMBT1815G-x-AN3-R
MMBT1815G-x-AQ3-R
Pin Assignment: E: Emitter B: Base
Package
SOT-113
SOT-23
SOT-323
SOT-523
SOT-723
C: Collector
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
MARKING
PACKAGE
Y
SOT-23
MARKING
GR
BL
C4GG
SOT-113 / SOT-323 / SOT-523
SOT-723
CG
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Copyright © 2014 Unisonic Technologies Co., Ltd
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MMBT1815

NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING ( TA=25C , unless otherwise specified )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SOT-23
Collector Dissipation
SOT-523/SOT-113/SOT-323
(TA=25C)
SOT-723
Collector Current
Base Current
SYMBOL
VCBO
VCEO
VEBO
RATINGS
60
50
5
250
200
190
150
50
PC
IC
IB
UNIT
V
V
V
mW
mA
mA
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Output Capacitance
Noise Figure

SYMBOL
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
ICBO
IEBO
hFE1
hFE2
fT
COB
NF
TEST CONDITIONS
IC = 100A, IE = 0
IC = 10mA, IB = 0
IE = 10A, IC = 0
IC = 100mA, IB = 10mA
IC = 100mA, IB = 10mA
VCB = 60V, IE = 0
VEB = 5V, IC = 0
VCE = 6V, IC = 2mA
VCE = 6V, IC = 150mA
VCE = 10V,Ic = 50mA
VCB = 10V, IE = 0, f = 1MHz
IC = 0.1mA, VCE = 6V
RG = 10k, f = 100Hz
MIN
50
50
5
TYP
0.1
120
25
80
MAX UNIT
V
V
V
0.25
V
1.0
V
100
nA
100
nA
700
2.0
3.0
MHz
pF
1.0
1.0
dB
CLASSIFICATION OF hFE1
RANK
RANGE
Y
120-240
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
GR
200-400
BL
350-700
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TYPICAL CHARACTERISTICS
Current Gain-Bandwidth Product
Collector Output Capacitance
3
10
10
V CE =6V
Capacitance, Cob (pF)
Current Gain-bandwidth
product,fT (MHz)

NPN SILICON TRANSISTOR
2
10
1
10
0
10
10
10
2
f=1MHz
IE =0
1
0
-1
10
-1
10
0
10
1
10
Collector Current, Ic (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2
10
0
10
1
10
2
10
3
10
Collector-Base Voltage (V)
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TYPICAL CHARACTERISTICS (Cont.)
DC Current Gain, hFE

NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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