UNISONIC TECHNOLOGIES CO., LTD UH11K Preliminary NPN EPITAXIAL SILICON TRANSISTOR DUAL BIAS RESISTOR TRANSISTORS DESCRIPTION The UTC UH11K is a dual bias resistor transistors, it uses UTC’s advanced technology to provide customers with saving board space, reducing component count, etc. The UTC UH11K is suitable for low power surface mount applications, etc. FEATURES * Reducing component count * Saving board space EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Note: UH11KG-AL6-R UH11KG-AN6-R Pin Assignment: E: Emitter UH11KG-AL6-R Package B: Base SOT-363 SOT-563 C: Collector 1 E1 E1 Pin Assignment 2 3 4 5 B1 C2 E2 B2 B1 C2 E2 B2 (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AL6: SOT-363, AN6: SOT-563 (3)Green Package (3) G: Halogen Free and Lead Free 6 C1 C1 Packing Tape Reel Tape Reel MARKING SOT-363 www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd SOT-563 1 of 3 QW-R218-027.c UH11K Preliminary NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector Current RATINGS UNIT 50 V 50 V 100 mA SOT-363 150 mW Power Dissipation PD SOT-563 120 mW Junction Temperature TJ -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VCBO VCEO IC ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO IC=10µA, IE=0 50 Collector-Emitter Breakdown Voltage (Note 1) BVCEO IC=2.0mA, IB=0 50 Collector-Base Cutoff Current ICBO VCB=50V, IE=0 Collector-Emitter Cutoff Current ICEO VCE=50V, IB=0 Emitter-Base Cutoff Current IEBO VEB=6.0V, IC=0 ON CHARACTERISTICS (Note 2) DC Current Gain hFE VCE=10V, IC=5.0mA 35 Output Voltage (on) VOL VCC=5.0V, VB=2.5V, RL=1.0 kΩ ON CHARACTERISTICS (Note 2) Input Resistor R1 7.0 Resistor Ratio R1/R2 0.8 Notes: 1. Pulse Test: Pulse Width<300µs, Duty Cycle<2.0% 2. Pulse Test: Pulse Width<300ms, Duty Cycle<2.0% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT 100 500 0.5 V V nA nA mA 0.2 V 13 1.2 kΩ kΩ 60 10 1.0 2 of 3 QW-R218-027.c UH11K Preliminary NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R218-027.c