UNISONIC TECHNOLOGIES CO., LTD 13002AG Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The UTC 13002AG is designed for use in Compact Fluorescent Lamps. 1 TO-92 FEATURES * High Voltage Capability * Low Spread of Dynamic Parameters * Very High Switching Speed ORDERING INFORMATION Ordering Number Lead Free Halogen Free 13002AGL-T92-A-B 13002AGP-T92-A-B 13002AGL-T92-A-K 13002AGP-T92-A-K Package TO-92 TO-92 Pin Assignment 1 2 3 E C B E C B Packing Tape Box Bulk 13002AGL-T92-A-B (1)Packing Type (1) B: Bluk, K: Bulk (2)Pin Assignment (2) refer to Pin Assignment (3)Package Type (3) T92: TO-92 (4)Lead Free (4) L: Lead Free, P: Halogen Free MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R201-090.c 13002AG Preliminary NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector Emitter Voltage (VBE = 0) VCES 700 V Collector Emitter Voltage (IB = 0) VCEO 400 V Emitter Base Voltage (IC = 0) VEBO 9 V Collector Current IC 0.75 A Collector Peak Current (tp < 5 ms) ICM 0.5 A Base Current IB 0.4 A Base Peak Current (tp < 5 ms) IBM 0.75 A Total Dissipation at Ta = 25°C PD 0.95 W Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERAMAL DATA PARAMETER Thermal Resistance Junction-ambient SYMBOL θJA RATINGS 130 UNIT °C /W ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified) PARAMETER Collector Emitter Sustaining Voltage (IB = 0) (Note) SYMBOL Collector Emitter Saturation Voltage (Note) VCE(SAT) Base Emitter Saturation Voltage (Note) VBE(SAT) Emitter Cut off Current (IC = 0) Collector Cut off Current (VBE = -1.5V) IEBO ICEV DC Current Gain hFE* Inductive Load Fall Time TEST CONDITIONS VCEO(SUS) IC = 1 mA tF IC = 0.2 A , IB = 40 mA IC = 0.3 A , IB = 75 mA IC = 0.4 A , IB = 135 mA IC = 0.2 A , IB = 40 mA IC = 0.3 A , IB = 75 mA VEB = 9 V VCE = 700 V IC = 0.2 A, VCE = 5 V IC = 0.4 A, VCE = 5 V IC = 0.2 A , VCLAMP = 300 V IB1 = -IB2 = 40 mA , L = 3 mH MIN TYP MAX UNIT 700 V 0.2 0.3 0.4 12 7 0.3 0.5 1 1.5 1 1.2 1 250 27 20 V V mA μA μs Note: Pulsed: Pulse duration = 300μs, duty cycle = 1.5 % UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R201-090.c 13002AG Preliminary NPN SILICON TRANSISTOR INDUCTIVE LOAD SWITCHING TEST CIRCUIT LC (1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier (3) IB1 IC (1) IB RBB(2) VCE VCLAMP Vcc VBB + UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R201-090.c