VS-16CTQ...PbF Series, VS-16CTQ...-N3 Series Datasheet

VS-16CTQ...PbF Series, VS-16CTQ...-N3 Series
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Vishay Semiconductors
Schottky Rectifier, 2 x 8 A
FEATURES
Base 2
common
cathode
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
Anode
TO-220AB
Anode
2
1 Common 3
cathode
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
Package
TO-220AB
IF(AV)
2x8A
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
VR
60 V, 80 V, 100 V
VF at IF
0.58 V
IRM max.
7 mA at 125 °C
DESCRIPTION
TJ max.
175 °C
Diode variation
Common cathode
EAS
7.5 mJ
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
CHARACTERISTICS
SYMBOL
IF(AV)
VALUES
UNITS
16
A
60 to 100
V
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
850
A
VF
8 Apk, TJ = 125 °C (per leg)
0.58
V
TJ
Range
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC
reverse voltage
VR
Maximum working
peak reverse
voltage
VSVSVSVSVSVSUNITS
16CTQ060PbF 16CTQ060-N3 16CTQ080PbF 16CTQ080-N3 16CTQ100PbF 16CTQ100-N3
60
60
80
80
100
100
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
SYMBOL
VALUES
UNITS
8
per leg
IF(AV)
50 % duty cycle at TC = 148 °C, rectangular waveform
per device
A
16
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
IFSM
Non-repetitive avalanche energy per leg
EAS
Revision: 25-Aug-11
TEST CONDITIONS
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 0.50 A, L = 60 mH
850
A
275
7.50
mJ
Document Number: 94146
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VS-16CTQ...PbF Series, VS-16CTQ...-N3 Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
IAR
Repetitive avalanche current per leg
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.50
A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
8A
Maximum forward voltage drop per leg
See fig. 1
VFM
(1)
TJ = 25 °C
16 A
8A
TJ = 125 °C
16 A
Maximum reverse leakage current per leg
See fig. 2
IRM (1)
Threshold voltage
VF(TO)
TJ = 25 °C
VR = rated VR
TJ = 125 °C
TJ = TJ maximum
VALUES
UNITS
0.72
0.88
V
0.58
0.69
0.55
mA
7.0
0.415
V
11.07
m
Forward slope resistance
rt
Maximum junction capacitance per leg
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
500
pF
Typical series inductance per leg
LS
Measured lead to lead 5 mm from package body
8.0
nH
Maximum voltage rate of change
dV/dt
10 000
V/µs
VALUES
UNITS
- 55 to 175
°C
Rated VR
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case per leg
RthJC
Maximum thermal resistance
junction to case per package
RthJC
Typical thermal resistance,
case to heatsink
RthCS
TEST CONDITIONS
3.25
DC operation
Mounting surface, smooth and greased
0.50
2
g
0.07
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf ·in)
Approximate weight
Mounting torque
°C/W
1.63
16CTQ060
Marking device
Case style TO-220AB
16CTQ080
16CTQ100
Revision: 25-Aug-11
Document Number: 94146
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-16CTQ...PbF Series, VS-16CTQ...-N3 Series
Vishay Semiconductors
1000
100
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
www.vishay.com
100
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
10
TJ = 175 °C
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
0.1
TJ = 75 °C
0.01
TJ = 50 °C
TJ = 25 °C
0.001
1
0.0001
0
0.5
1.5
1.0
0
2.5
2.0
20
40
60
80
100
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
20
0
60
40
80
100
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 25-Aug-11
Document Number: 94146
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-16CTQ...PbF Series, VS-16CTQ...-N3 Series
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Vishay Semiconductors
7
170
DC
160
150
Square wave (D = 0.50)
80 % rated VR applied
140
130
120
110
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
6
Average Power Loss (W)
Allowable Case Temperature (°C)
180
5
4
RMS limit
3
DC
2
1
See note (1)
100
0
2
0
4
6
8
10
12
14
0
2
4
6
8
10
12
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
10 000
1000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
D.U.T.
Rg = 25 Ω
Current
monitor
High-speed
switch
IRFP460
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR applied
Revision: 25-Aug-11
Document Number: 94146
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-16CTQ...PbF Series, VS-16CTQ...-N3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
16
C
T
Q
1
2
3
4
5
100 PbF
6
1
-
Vishay Semiconductors product
2
-
Current rating (16 = 16 A)
3
-
Circuit configuration
7
C = Common cathode
-
4
Package
T = TO-220
5
-
Schottky “Q” series
6
-
Voltage rating
7
-
Environmental digit
060 = 60 V
080 = 80 V
100 = 100 V
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-16CTQ060PbF
50
1000
Antistatic plastic tube
VS-16CTQ060-N3
50
1000
Antistatic plastic tube
VS-16CTQ080PbF
50
1000
Antistatic plastic tube
VS-16CTQ080-N3
50
1000
Antistatic plastic tube
VS-16CTQ100PbF
50
1000
Antistatic plastic tube
VS-16CTQ100-N3
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
Revision: 25-Aug-11
www.vishay.com/doc?95222
TO-220AB PbF
TO-220AB -N3
www.vishay.com/doc?95225
www.vishay.com/doc?95028
www.vishay.com/doc?95279
Document Number: 94146
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AB
DIMENSIONS in millimeters and inches
A
(6)
E
E2
ØP
0.014 M B A M
(7)
A
B
Seating
plane
A
Thermal pad
(E)
A1
1
Q
(6)
D
(H1)
H1
(7)
C
D2 (6)
(6) D
2 3
D
L1 (2)
C
Detail B
D1
3xb
1
2
3
3 x b2
Detail B
C
E1 (6)
L
Base metal
View A - A
c
Plating
c1 (4)
c
A
2x e
A2
e1
(b, b2)
b1, b3
(4)
Section C - C and D - D
0.015 M B A M
Lead assignments
Lead tip
Diodes
Conforms to JEDEC outline TO-220AB
1. - Anode/open
2. - Cathode
3. - Anode
SYMBOL
MILLIMETERS
MIN.
MAX.
4.25
4.65
1.14
1.40
2.56
2.92
0.69
1.01
0.38
0.97
1.20
1.73
1.14
1.73
0.36
0.61
0.36
0.56
14.85
15.25
8.38
9.02
11.68
12.88
INCHES
MIN.
MAX.
0.167
0.183
0.045
0.055
0.101
0.115
0.027
0.040
0.015
0.038
0.047
0.068
0.045
0.068
0.014
0.024
0.014
0.022
0.585
0.600
0.330
0.355
0.460
0.507
NOTES
A
A1
A2
b
b1
4
b2
b3
4
c
c1
4
D
3
D1
D2
6
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and
E1
Document Number: 95222
Revision: 08-Mar-11
SYMBOL
E
E1
E2
e
e1
H1
L
L1
ØP
Q

(7)
(8)
MILLIMETERS
MIN.
MAX.
10.11
10.51
6.86
8.89
0.76
2.41
2.67
4.88
5.28
6.09
6.48
13.52
14.02
3.32
3.82
3.54
3.73
2.60
3.00
90° to 93°
INCHES
MIN.
MAX.
0.398
0.414
0.270
0.350
0.030
0.095
0.105
0.192
0.208
0.240
0.255
0.532
0.552
0.131
0.150
0.139
0.147
0.102
0.118
90° to 93°
NOTES
3, 6
6
7
6, 7
2
Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
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Document Number: 91000