VS-61CTQ...PbF Series, VS-61CTQ...-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 30 A FEATURES Base 2 common cathode • 175 °C TJ operation • Low forward voltage drop • High frequency operation Anode TO-220AB Anode 2 1 Common 3 cathode PRODUCT SUMMARY • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Compliant to RoHS Directive 2002/95/EC Package TO-220AB IF(AV) 2 x 30 A VR 35 V, 40 V, 45 V • Designed and qualified according to JEDEC-JESD47 • Halogen-free according to IEC 61249-2-21 definition (-N3 only) DESCRIPTION VF at IF 0.57 V IRM max. 40 mA at 125 °C TJ max. 175 °C Diode variation Common cathode EAS 27 mJ This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IF(AV) VALUES UNITS 60 A 35 to 45 V Rectangular waveform (per device) VRRM IFRM TC = 142 °C (per leg) IFSM tp = 5 μs sine VF 30 Apk, TJ = 125 °C TJ Range 60 A 2600 0.57 V - 65 to 175 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VSVSVSVSVSVSUNITS 61CTQ035PbF 61CTQ035-N3 61CTQ040PbF 61CTQ040-N3 61CTQ045PbF 61CTQ045-N3 35 35 40 40 45 45 V VRWM ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Maximum average forward current per leg TEST CONDITIONS VALUES UNITS 30 IF(AV) TC = 142 °C, rated VR Peak repetitive forward current per leg IFRM Rated VR, square wave, 20 kHz, TC = 142 °C Maximum peak one cycle non-repetitive surge current per leg IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 4 A, L = 3.4 mH 27 mJ Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 4 A Revision: 29-Aug-11 per device 5 µs sine or 3 µs rect. pulse 10 ms sine or 6 ms rect. pulse 60 Following any rated load condition and with rated VRRM applied 60 A 2600 350 Document Number: 94241 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-61CTQ...PbF Series, VS-61CTQ...-N3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 30 A VFM (1) Maximum forward voltage drop TJ = 25 °C 60 A 30 A TJ = 125 °C 60 A TJ = 25 °C Maximum instantaneous reverse current IRM Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C LS Measured from top of terminal to mounting plane Typical series inductance Maximum voltage rate of change dV/dt Rated DC voltage TJ = 125 °C Rated VR TYP. MAX. 0.57 0.61 0.72 0.76 0.53 0.57 0.70 0.74 0.06 1 21 40 UNITS V mA 1900 pF 8.0 nH 10 000 V/µs Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS - 65 to 175 °C Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case per leg RthJC DC operation 1.2 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.50 °C/W Approximate weight Mounting torque minimum maximum Non-lubricated threads 2 g 0.07 oz. 6 (5) kgf · cm (lbf · in) 12 (10) 61CTQ035 Marking device Case style TO-220AB 61CTQ040 61CTQ045 Revision: 29-Aug-11 Document Number: 94241 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-61CTQ...PbF Series, VS-61CTQ...-N3 Series Vishay Semiconductors 1000 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 1 TJ = 175 °C 100 TJ = 150 °C 10 TJ = 125 °C TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 0 0.2 0.4 0.8 0.6 1.0 1.2 1.4 0 10 20 40 30 50 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 100 0 5 10 15 20 25 30 35 40 45 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 0.01 0.001 0.00001 Single pulse (thermal resistance) 0.0001 PDM D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.1 0.001 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 29-Aug-11 Document Number: 94241 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-61CTQ...PbF Series, VS-61CTQ...-N3 Series www.vishay.com Vishay Semiconductors 30 160 Average Power Loss (W) Allowable Case Temperature (°C) 180 DC Square wave (D = 0.50) 80 % rated VR applied 140 120 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 25 20 15 RMS limit 10 DC 5 See note (1) 0 100 0 5 10 15 20 25 30 35 40 5 0 45 10 15 20 25 30 35 40 45 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 10 000 At any rated load condition and with rated VRRM applied following surge 1000 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 29-Aug-11 Document Number: 94241 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-61CTQ...PbF Series, VS-61CTQ...-N3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 61 C T Q 1 2 3 4 5 1 - Vishay Semiconductors product 2 - Current rating (60 = 60 A) 3 - Circuit configuration 045 PbF 6 7 C = Common cathode 4 - Package T = TO-220 5 - Schottky “Q” series 6 - Voltage ratings 7 - Environmental digit 035 = 35 V 040 = 40 V 045 = 45 V PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-61CTQ035PbF 50 1000 Antistatic plastic tube VS-61CTQ035-N3 50 1000 Antistatic plastic tube VS-61CTQ040PbF 50 1000 Antistatic plastic tube VS-61CTQ040-N3 50 1000 Antistatic plastic tube VS-61CTQ045PbF 50 1000 Antistatic plastic tube VS-61CTQ045-N3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information Revision: 29-Aug-11 www.vishay.com/doc?95222 TO-220AB PbF www.vishay.com/doc?95225 TO-220AB -N3 www.vishay.com/doc?95028 Document Number: 94241 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches A (6) E E2 ØP 0.014 M B A M (7) A B Seating plane A Thermal pad (E) A1 1 Q (6) D (H1) H1 (7) C D2 (6) (6) D 2 3 D L1 (2) C Detail B D1 3xb 1 2 3 3 x b2 Detail B C E1 (6) L Base metal View A - A c Plating c1 (4) c A 2x e A2 e1 (b, b2) b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead assignments Lead tip Diodes Conforms to JEDEC outline TO-220AB 1. - Anode/open 2. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.56 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.25 8.38 9.02 11.68 12.88 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.101 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.600 0.330 0.355 0.460 0.507 NOTES A A1 A2 b b1 4 b2 b3 4 c c1 4 D 3 D1 D2 6 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 Revision: 08-Mar-11 SYMBOL E E1 E2 e e1 H1 L L1 ØP Q (7) (8) MILLIMETERS MIN. MAX. 10.11 10.51 6.86 8.89 0.76 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.73 2.60 3.00 90° to 93° INCHES MIN. MAX. 0.398 0.414 0.270 0.350 0.030 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.147 0.102 0.118 90° to 93° NOTES 3, 6 6 7 6, 7 2 Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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