BAV19WS, BAV20WS, BAV21WS www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES • Silicon epitaxial planar diodes • For general purpose • AEC-Q101 qualified • Base P/N-E3 - RoHS-compliant, commercial grade MECHANICAL DATA • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Case: SOD-323 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Weight: approx. 4.3 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE TYPE DIFFERENTIATION ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS BAV19WS VR = 100 V BAV19WS-E3-08 or BAV19WS-E3-18 BAV19WS-HE3-08 or BAV19WS-HE3-18 A8 Single diode Tape and reel BAV20WS VR = 150 V BAV20WS-E3-08 or BAV20WS-E3-18 BAV20WS-HE3-08 or BAV20WS-HE3-18 A9 Single diode Tape and reel BAV21WS VR = 200 V BAV21WS-E3-08 or BAV21WS-E3-18 BAV21WS-HE3-08 or BAV21WS-HE3-18 AA Single diode Tape and reel PART ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BAV19WS VR 100 V BAV20WS VR 150 V BAV21WS VR 200 V BAV19WS VRRM 120 V BAV20WS VRRM 200 V BAV21WS VRRM 250 V IF 250 mA IF(AV) 200 mA f 50 Hz, = 180° IFRM 625 mA t < 1 s, TJ = 25 °C IFSM 1 A Ptot 200 mW SYMBOL VALUE UNIT Thermal resistance junction to ambient air RthJA 625 K/W Thermal resistance junction to lead RthJL 450 K/W Tj 150 °C Storage temperature range Tstg -65 to +150 °C Operating temperature range Top -55 to +150 °C Continuous reverse voltage Repetitive peak reverse voltage Forward continuous current (1) Rectified current (average) half wave rectification with resistive load (1) Repetitive peak forward current (1) Surge forward current Power dissipation Note (1) Valid provided that leads are kept at ambient temperature THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction temperature TEST CONDITION Rev. 1.9, 15-Oct-14 Document Number: 85726 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAV19WS, BAV20WS, BAV21WS www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL IF = 100 mA Forward voltage IF = 200 mA TYP. UNIT 1 V VF 1.25 V IR 100 nA VR = 100 V, TJ = 100 °C BAV19WS IR 15 μA VR = 150 V BAV20WS IR 100 nA VR = 150 V, TJ = 100 °C BAV20WS IR 15 μA VR = 200 V BAV21WS IR 100 nA VR = 200 V, TJ = 100 °C BAV21WS IR 15 μA Dynamic forward resistance IF = 10 mA rf VR = 0, f = 1 MHz CD 1.5 pF IF = 30 mA, IR = 30 mA, iR = 3 mA, RL = 100 trr 50 ns Diode capacitance Reverse recovery time MIN. BAV19WS VR = 100 V Reverse leakage current MAX. VF 5 I F - Forward Current (mA) 1000 Tj = 100 °C 100 10 25 °C 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1 VF - Forward Voltage (V) 18858 0.2 DC current IF Current (rectif.) I O 0.1 0 18859 60 90 200 150 100 50 0 0 20 40 60 80 100 120 140 160 180 200 Tamb - Ambient Temperature (°C) 120 Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature rf - Dynamic Forward Resistance (Ω) I O , I F - Admissible Forward Current (A) 0.3 30 250 18864 Fig. 1 - Forward Current vs. Forward Voltage 0 Ptot - Admissible Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 100 10 1 1 150 Tamb - Ambient Temperature (°C) Fig. 2 - Admissible Forward Current vs. Ambient Temperature 18861 10 100 IF - Forward Current (mA) Fig. 4 - Dynamic Forward Resistance vs. Forward Current Rev. 1.9, 15-Oct-14 Document Number: 85726 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAV19WS, BAV20WS, BAV21WS www.vishay.com Vishay Semiconductors 100 10 1 0.1 0 18862_3 Reverse Voltage BAV19WS VR = 100 V BAV20WS VR = 150 V BAV21WS VR = 200 V 40 80 120 160 Tj - Junction Temperature (°C) 2.0 1.8 CD - Diode Capacitance (pF) IR(Tj)/IR (25 °C) - Leakage Current 1000 T j = 25 ° C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 200 1 Fig. 5 - Leakage Current vs. Junction Temperature 10 100 VR - Reverse Voltage (V) 18863 Fig. 6 - Capacitance vs. Reverse Voltage 0.1 (0.004) max. 0° to 8 ° 0.15 (0.006) 0.10 (0.004) 0.2 (0.008) 0.8 (0.031) 1.15 (0.045) PACKAGE DIMENSIONS in millimeters (inches): SOD-323 0.40 (0.016) 0.25 (0.010) 1.95 (0.077) 1.60 (0.063) 2.50 (0.098) 1.1 (0.043) 2.85 (0.112) 1.5 (0.059) 0.40 (0.016) 0.20 (0.008) Cathode bar Foot print recommendation: Document no.:S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 5 - Date: 23.Sept.2009 17443 1.6 (0.063) 0.6 (0.024) 0.6 (0.024) 0.6 (0.024) Rev. 1.9, 15-Oct-14 Document Number: 85726 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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