BAV19WS ~ BAV21WS SMALL SIGNAL DIODES SOD-323 PRV : 100 Volts Io : 250 mA 0.112 (2.85) * Silicon Epitaxial Planar Diode * For General Purpose 0.100 (2.55) FEATURES : 0.065 (1.65) 0.076 (1.95) 0.012 (0.3) 0.049 (1.25) max. max. 0.004(0.1) * Pb / RoHS Free MECHANICAL DATA : * Case : SOD-323 plastic Case max. 0.006 (0.15) 0.059 (1.5) 0.043 (1.1) min. 0.010 (0.25) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Parameter Symbol BAV19WS Reverse Voltage VR 100 Peak Reverse Voltage VRM 120 BAV20WS 150 BAV21WS Unit 200 200 V 250 V Rectified Current (Average) Half Wave Rectification with Resist. Load IF(AV) 250 mA IFSM 1.0 A at Tamb = 25 °C and f ≥ 50 Hz Surge Forward Current at t < 1 s and Tj = 25 °C Power Dissipation at Tamb = 25 °C Ptot Junction Temperature Tj 150 °C Storage Temperature Range TS -65 to + 175 °C ELECTRICAL CHARACTERISTICS (Rating at Tj = Parameter Leakage Current VF BAV19WS BAV20WS IR BAV21WS Capacitance Reverse Recovery Time mW 25 °C unless otherwise specified) Symbol Forward Voltage 200 1) Ctot Trr Test Condition Min. Typ. Max. Unit IF = 100 mA - - 1 V V IF = 200 mA - - 1.25 VR = 100 V - - 100 VR = 150 V - - 100 VR = 200 V - - 100 VF = VR = 0 V - - 1.5 pF - - 50 ns IF = 30 mA, IR = 30mA Irr = 3 mA, RL = 100Ω nA Note : 1) Valid provided that electrodes are kept at ambient temperature Page 1 of 2 Rev. 03 : March 25, 2005 RATINGS AND CHARACTERISTIC CURVES ( BAV19WS ~ BAV21WS) Forward charecteristics Dynamic forward resistance versus forward current mA V 103 104 5 Tj = 100 °C 2 102 103 5 Tj = 25 °C iF rF 10 2 102 5 1 2 10 10-1 5 2 1 -2 10 0 1 10-2 2V 10-1 VF 102 10 1 mA IF Admissible power dissipation versus ambient temperture Admissible forward current versus ambient temperture For conditions, see footnote in table Valid provided that electrodes are kept "Absolute Maximum Ratings" at ambient temperratue mW 0.25 500 400 Io, I F P tot 0.2 DC Current, IF 300 200 0.1 Current (rectif.) IF 100 0 0 0 100 T amb Page 2 of 2 200 °C 0 40 60 80 120 160 V T amb Rev. 03 : March 25, 2005