10-FY12B2A040MR-L387L68 target datasheet flow BOOST 1 dual SiC 1200 V / 40 mΩ Features flow 1 12mm housing ● High frequency SiC MOSFET ● Compact and low inductive design Schematic Target applications ● Solar Types ● 10-FY12B2A040MR-L387L68 Maximum Ratings Tj = 25 °C, unless otherwise specified Parameter Symbol Condition Value Unit 1200 V 41 A 137 A 66 W Boost Switch Drain-source voltage V DSS Drain current ID T j = T jmax Peak drain current pulsed I DP t p limited by T jmax Total power dissipation P tot T j = T jmax Gate-source voltage V GSS -4/ +22 V Maximum Junction Temperature T jmax 175 °C Copyright Vincotech T s = 80°C T s = 80°C 1 16 Mar. 2016 / Revision 2 10-FY12B2A040MR-L387L68 target datasheet Maximum Ratings Tj = 25 °C, unless otherwise specified Parameter Symbol Condition Value Unit 1200 V 27 A 100 A 60 W 175 °C 1600 V 46 A 270 A 370 A s 56 W Boost Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current I FRM Total power dissipation P tot Maximum Junction Temperature T jmax T j = T jmax T s = 80°C T j = T jmax T s = 80°C Boost Sw. Protection Diode/Bypass Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current Surge (non-repetitive) forward current V RRM IF I FSM 2 T j = T jmax T s = 80 °C 50 Hz Single Half Sine W ave t p = 10 ms T j = 150 °C 2 Surge current capability I t Total power dissipation P tot Maximum Junction Temperature T jmax 150 °C V MAX 1000 V T op -55…+125 °C Storage temperature T stg -40…+125 °C Operation temperature under switching condition T jop -40…(T jmax - 25) °C 4000 V min. 12,7 mm 9,41 mm T j = T jmax T s = 80 °C DC Link Capacitance Maximum DC voltage Operation Temperature Module Properties Thermal Properties Isolation Properties Isolation voltage V isol DC Test Voltage Creepage distance Clearance Comparative Tracking Index Copyright Vincotech CTI tp = 2 s > 200 2 16 Mar. 2016 / Revision 2 10-FY12B2A040MR-L387L68 target datasheet Characteristic Values Parameter Conditions Symbol VCE [V] VGE [V] VGS [V] VGS [V] Vr [V] Value IC [A] ID [A] IF [A] Tj[°C] Min Unit Typ Max 25 40 50 125 60 Boost Switch Static Drain-sourc e on-state resistanc e R DS(on) Gate-source threshold voltage V GS(th) 18 20 10 0,01 25 2,7 4,5 mΩ 5,6 Gate to Sourc e Leakage Current I GSS -4 0 25 -100 Gate to Sourc e Leakage Current I GSS +22 0 25 100 Zero Gate Voltage Drain Current I DSS 0 1200 25 10 nA Internal gate resistance rg 7 Gate c harge Qg 107 Gate to source charge Q GS Gate to drain charge Q GD 41 Short-circ uit input capacitance C iss 1337 Short-circ uit output capacitance C oss Reverse transfer capac itance C rss 18 f = 1MHz 0 600 20 25 25 800 µA Ω 22 nC 76 pF 27 Thermal Thermal resistance junction to sink R th(j-s) phase-c hange material λ=3,4 W/mK 1,45 K/W Boost Diode Static Forward voltage VF Reverse leakage current Ir 20 1200 25 1,4 150 1,8 25 1,4 400 V µA Thermal Thermal resistance junction to sink Copyright Vincotech R th(j-s) phase-change material λ = 3,4 W/mK 1,58 3 K/W 16 Mar. 2016 / Revision 2 10-FY12B2A040MR-L387L68 target datasheet Characteristic Values Parameter Conditions Symbol VCE [V] VGE [V] VGS [V] VGS [V] Vr [V] Value IC [A] ID [A] IF [A] Tj[°C] Min Unit Typ Max 1,17 1,6 Boost Sw. Protection Diode/Bypass Diode Static Forward voltage VF Reverse leakage c urrent Ir 35 1600 25 0,8 125 1,13 25 50 145 1100 V µA Thermal Thermal resistance junc tion to sink R th(j-s) phase-change material λ = 3,4 W /mK 1,25 K/W 47 nF DC Link Capacitance Capacitance C Tolerance -10 +10 % Thermistor Rated resistance 25 R Deviation of R100 ΔR/R Power dissipation P R100 = 1484 Ω 100 Power dissipation constant 22 -5 kΩ 5 % 25 5 mW 25 1,5 mW/K B-value B(25/50) Tol. ±1% 25 3962 K B-value B(25/100) Tol. ±1% 25 4000 K Vincotech NTC Reference Copyright Vincotech I 4 16 Mar. 2016 / Revision 2 10-FY12B2A040MR-L387L68 target datasheet Ordering Code & Marking Version without thermal paste 12mm housing with solder pins with thermal paste 12mm housing with solder pins Ordering Code 10-FY12B2A040MR-L387L68 10-FY12B2A040MR-L387L68-/3/ NN-NNNNNNNNNNNNNN TTTTTTVV WWYY UL VIN LLLLL SSSS Text Datamatrix Name Date code UL & VIN Lot Serial NN-NNNNNNNNNNNNNN-TTTTTTVV WWYY UL VIN LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin X Y Function 1 52,2 0 Boost2 2 49,2 0 Boost2 not assembled 34,7 0 DC+In2 not assembled 3 4 5 6 31,7 0 DC+In2 7 20,5 0 DC+In1 8 17,5 0 9 10 DC+In1 not assembled not assembled 11 12 13 3 0 14 0 6 DC+ 15 0 9 DC+ 16 0 20,5 DC- 17 0 23,5 18 0 Boost1 0 Boost1 not assembled DCnot assembled 19 8,1 28,2 20 11,1 28,2 21 E1 not assembled 22 23,55 28,2 23 28,65 28,2 24 G1 NTC1 NTC2 not assembled 25 41,1 28,2 E2 26 44,1 28,2 G2 27 not assembled Pin table [mm] Pin X Y 30 52,2 9 52,2 28 52,2 23,5 DC- 31 29 52,2 20,5 DC- 32 Copyright Vincotech Function DC+ 6 DC+ not assembled 5 16 Mar. 2016 / Revision 2 10-FY12B2A040MR-L387L68 target datasheet Pinout Identification ID Component Voltage Current Function T1,T2 MOSFET 1200 V 40 mΩ Boost Switch D1,D2 FWD 1200 V 20 A Boost Diode D5,D6 FWD 1600 V 35 A Boost Sw. Protection Diode D3,D4 Rectifier 1600 V 35 A C1,C2 Capacitor 1000 V NTC NTC Copyright Vincotech Comment Bypass Diode DC Link Capacitance Thermistor 6 16 Mar. 2016 / Revision 2 10-FY12B2A040MR-L387L68 target datasheet Packaging instruction Standard pac kaging quantity (SPQ) 100 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 1 packages see vincotec h.com website. Package data Package data for flow 1 packages see vinc otech.com website. UL recognition and file number This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotec h.com website. Document No.: Date: Modification: Pages 10-FY12B2A040MR-L387L68-T2-14 16 Mar. 2016 Capacitor and NTC changed 2,4 Product status definition Datasheet Status Product Status Target Formative or In Design Definition This datasheet contains the design specific ations for product development. Specifications may change in any manner without notice. The data contained is exc lusively intended for technically trained staff. DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 7 16 Mar. 2016 / Revision 2