10-PY12NBB100SH04-L019L38Y target datasheet flow BOOST 1 symmetric 1200 V / 100 A Features flow 1 12mm housing ● 10kVA UPS Boost ● Fast IGBT + Fast Diode Schematic Target applications ● UPS Types ● 10-PY12NBB100SH04-L019L38Y Maximum Ratings Tj = 25 °C, unless otherwise specified Parameter Symbol Condition Value Unit 650 V 65 A 225 A 123 W ±20 V Positive Boost Switch Collector-emitter voltage Collector current VCES IC Tj = Tjmax TS =80 °C Repetitive peak collector current ICRM tp limited by Tjmax Total power dissipation Ptot Tj = Tjmax Gate-emitter voltage VGES Short circuit ratings Maximum Junction Temperature Copyright Vincotech tSC Tj ≤ 150°C VCC VGE = 15V TS =80 °C Tjmax 1 5 µs 400 V 175 °C 02 Mar. 2016 / Revision 1 10-PY12NBB100SH04-L019L38Y target datasheet Maximum Ratings Tj = 25 °C, unless otherwise specified Parameter Symbol Condition Value Unit 650 V 52 A 100 A 67 W 175 °C 650 V 20 A 30 A 36 W Positive Boost Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current VRRM IF Repetitive peak forward current IFRM Total power dissipation Ptot Maximum Junction Temperature Tjmax Tj = Tjmax Ts = 80°C Tj = Tjmax Ts = 80°C Positive Boost Protection Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current VRRM IF Tj = Tjmax Ts = 80°C Repetitive peak forward current IFRM Total power dissipation Ptot Maximum Junction Temperature Tjmax 175 °C VCES 1200 V 120 A 480 A 211 W Tj = Tjmax Ts = 80°C Negative Boost Switch Collector-emitter voltage Collector current IC Tj = Tjmax Ts = 80 °C Repetitive peak collector current ICRM tp limited by Tjmax Total power dissipation Ptot Tj = Tjmax Gate-emitter voltage VGES ±20 V Maximum junction temperature Tjmax 175 °C VRRM 1200 V Ts = 80 °C Negative Boost Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current IF Tj = Tjmax Ts = 80 °C 51 A Total power dissipation Ptot Tj = Tjmax Ts = 80 °C 109 W Maximum Junction Temperature Tjmax 175 °C Copyright Vincotech 2 02 Mar. 2016 / Revision 1 10-PY12NBB100SH04-L019L38Y target datasheet Maximum Ratings Tj = 25 °C, unless otherwise specified Parameter Symbol Condition Value Unit 1200 V 21 A 30 A 52 W Negative Boost Protection Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current VRRM IF Tj = Tjmax Ts = 80°C Repetitive peak forward current IFRM Total power dissipation Ptot Maximum Junction Temperature Tjmax 175 °C VRRM 1600 V 53 A 490 A 1200 A2s 86 W Tj = Tjmax Ts = 80°C Rectifier Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current Surge (non-repetitive) forward current IF Tj = Tjmax Ts = 80°C 50 Hz Single Half Sine Wave tp = 10 ms Tj = 150°C Tj = Tjmax Ts = 80°C IFSM Surge current capability I2t Total power dissipation Ptot Maximum Junction Temperature Tjmax 150 °C Storage temperature Tstg -40…+125 °C Operation temperature under switching condition Tjop -40…(Tjmax - 25) °C 4000 V Creepage distance min. 12,7 mm Clearance min. 12,7 mm Module Properties Thermal Properties Isolation Properties Isolation voltage Comparative Tracking Index Copyright Vincotech Visol DC Voltage tp = 2 s CTI > 200 3 02 Mar. 2016 / Revision 1 10-PY12NBB100SH04-L019L38Y target datasheet Characteristic Values Parameter Symbol Conditions VCE [V] VGE [V] VDS [V] VGS [V] VF [V] Value IC [A] ID [A] IF [A] Tj [°C] Unit Min Typ Max 25 4,2 5,1 5,6 25 1,38 1,72 2,22 Positive Boost Switch Static Gate-emitter threshold voltage VGE(th) Collector-emitter saturation voltage VCEsat VGE=VCE 0,0012 15 75 125 1,91 150 1,97 V V Collector-emitter cut-off current ICES 0 650 25 3,8 µA Gate-emitter leakage current IGES 20 0 25 150 nA Internal gate resistance rg Input capacitance Cies none 4620 f=1 MHz Reverse transfer capacitance Ω 0 25 25 pF 137 Cres Thermal Thermal resistance junction to sink Rth(j-s) phase-change material ʎ=3,4W/mK 0,77 K/W Positive Boost Diode Static Forward voltage VF Reverse leakage current Ir 50 650 25 125 150 1,35 1,32 1,28 25 1,77 V 2,65 µA Thermal Thermal resistance junction to sink Rth(j-s) phase-change material ʎ=3,4W/mK 1,42 K/W Positive Boost Protection Diode Static Forward voltage VF Reverse leakage current Ir 15 650 25 125 1,79 1,67 25 1,87 0,18 V µA Thermal Thermal resistance junction to sink Copyright Vincotech Rth(j-s) phase-change material ʎ = 3,4 W/mK 2,65 4 K/W 02 Mar. 2016 / Revision 1 10-PY12NBB100SH04-L019L38Y target datasheet Characteristic Values Parameter Symbol Conditions VCE [V] VGE [V] VDS [V] VGS [V] VF [V] Value IC [A] ID [A] IF [A] Tj [°C] Unit Min Typ Max Negative Boost Switch Static Gate-emitter threshold voltage VGE(th) Collector-emitter saturation voltage VCEsat VGE = VCE 15 0,12 25 5 6,77 7,3 V 120 25 1,5 1,80 2,5 V Collector-emitter cut-off current ICES 0 1200 25 150 µA Gate-emitter leakage current IGES 20 0 25 750 nA Internal gate resistance rg none Input capacitance Cies 12900 Output capacitance Coes Reverse transfer capacitance Cres Gate charge Qg f = 100 KHz 0 30 25 Ω 540 pF 300 15 600 120 25 1110 nC 0,45 K/W Thermal Thermal resistance junction to sink Rth(j-s) phase-change material λ = 3,4 W/mK Negative Boost Diode Static Forward voltage VF Reverse leakage current Ir 40 1200 25 2,65 25 3,8 V 100 µA Thermal Thermal resistance junction to sink Rth(j-s) phase-change material ʎ=3,4W/mK 0,87 K/W Negative Boost Protection Diode Static Forward voltage VF Reverse leakage current Ir 15 1200 25 150 1,80 1,77 25 2,05 3,5 V µA Thermal Thermal resistance junction to sink Copyright Vincotech Rth(j-s) phase-change material ʎ=3,4W/mK 1,83 5 K/W 02 Mar. 2016 / Revision 1 10-PY12NBB100SH04-L019L38Y target datasheet Characteristic Values Parameter Symbol Conditions VCE [V] VGE [V] VDS [V] VGS [V] VF [V] Value IC [A] ID [A] IF [A] Tj [°C] Min Unit Typ Max 1,22 1,48 1,8 Rectifier Diode Static Forward voltage VF Reverse leakage current Ir 50 1600 25 125 25 150 50 1100 V µA Thermal Thermal resistance junction to sink Rth(j-s) phase-change material ʎ=3,4W/mK 0,82 K/W 22 kΩ Thermistor Rated resistance R Deviation of R100 ΔR/R Power dissipation P 25 R100=1486 Ω 100 Power dissipation constant -12 +14 % 25 200 mW 25 2 mW/K B-value B(25/50) Tol. ±3% 25 3950 K B-value B(25/100) Tol. ±3% 25 3998 K Vincotech NTC Reference Copyright Vincotech B 6 02 Mar. 2016 / Revision 1 10-PY12NBB100SH04-L019L38Y target datasheet Ordering Code & Marking Version without thermal paste 12mm housing with Press-fit pins NN-NNNNNNNNNNNNNN TTTTTTVV WWYY UL VIN LLLLL SSSS Ordering Code 10-PY12NBB100SH04-L019L38Y Text Datamatrix Name Date code UL & VIN Lot Serial NN-NNNNNNNNNNNNNN-TTTTTTVV WWYY UL VIN LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin X Y Function 1 43 11,6 BA T S U RD O WN 2 43 8,6 BA T S U RD O WN 3 45,3 3 -400 4 45,3 0 -400 5 28,25 0 T2 6 25,25 0 T1 7 3 0 SURDOWN 8 0 0 SURDOWN 9 0 28 SURUP 10 3 28 SURUP 11 12 13 18 28 G1 21 28 E1 45,3 27,45 +400 14 45,3 24,45 +400 15 43 18,1 GND 16 40 18,1 GND 17 6,6 19,05 E2 18 6,6 16,05 G2 Copyright Vincotech 7 02 Mar. 2016 / Revision 1 10-PY12NBB100SH04-L019L38Y target datasheet Pinout Identification ID Component Voltage Current Function T1 IGBT 650 V 75 A Positive Boost Switch D1 FWD 650 V 50 A Positive Boost Diode D4 Diode 650 V 15 A Positive Boost Protection Diode Negative Boost Switch T2 IGBT 1200 V 120 D3 FWD 1200 V 75 A Negative Boost Diode D5 Diode 1200 V 15 A Negative Boost Protection Diode D2 Rectifier 1600 V 50 A Rectifier Diode NTC NTC Copyright Vincotech Comment Thermistor 8 02 Mar. 2016 / Revision 1 10-PY12NBB100SH04-L019L38Y target datasheet Packaging instruction Standard packaging quantity (SPQ)100 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 1 packages see vincotech.com website. Package data Package data for flow 1 packages see vincotech.com website. UL recognition and file number This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website. Document No.: Date: 10-PY12NBB100SH04-L019L38Y-T1-14 02 Mar. 2016 Modification: Pages Product status definition Datasheet Status Product Status Target Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 9 02 Mar. 2016 / Revision 1