30-P2126PA150NB-L280F69Y datasheet flow PACK 2 1200 V / 150 A Features flow 2 17mm housing ● Mitsubishi Generation 6.1 (1200V) technology for low saturation losses and improved EMC behavior ● Compact and low inductive design ● Integrated temperature sensor Schematic Target applications ● Industrial Drives Types ● 30-P2126PA150NB-L280F69Y Maximum Ratings Tj = 25 °C, unless otherwise specified Parameter Symbol Condition Value Unit 1200 V 150 A 300 A 319 W Inverter Switch Collector-emitter voltage Collector current V CES IC T j = T jmax T s = 80 °C Repetitive peak collector current I CRM t p limited by T jmax Total power dissipation P tot T j = T jmax Gate-emitter voltage V GES Short circuit ratings Maximum Junction Temperature Copyright Vincotech T s = 80 °C ±20 V t SC Tj ≤ 150°C 10 µs V CC VGE = 15V 850 V 175 °C T jmax 1 28 Jan. 2016 / Revision 1 30-P2126PA150NB-L280F69Y datasheet Maximum Ratings Parameter Symbol Condition Value Unit 1200 V 110 A 300 A 197 W Inverter Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF T s = 80°C T j = T jmax Repetitive peak forward current I FRM Total power dissipation P tot Maximum Junction Temperature T jmax 175 °C Storage temperature T stg -40…+125 °C Operation temperature under switching condition T jop -40…+(T jmax - 25) °C 4000 V Creepage distance min. 12,7 mm Clearance min. 12,7 mm T j = T jmax T s = 80°C Module Properties Thermal Properties Isolation Properties Isolation voltage Comparative Tracking Index Copyright Vincotech V isol DC Voltage t p = 2s > 200 CTI 2 28 Jan. 2016 / Revision 1 30-P2126PA150NB-L280F69Y datasheet Characteristic Values Parameter Conditions Symbol VCE [V] VGE [V] VGS [V] VGS [V] Vr [V] Value IC [A] ID [A] IF [A] Tj[°C] Unit Min Typ Max 25 5,4 6 6,6 25 1,35 1,70 2,15 Inverter Switch Static Gate-emitter threshold voltage V GE(th) Collec tor-emitter saturation voltage V CEsat V GE=V CE 0,014 15 150 0 1,97 150 2,02 V V Collec tor-emitter c ut-off current I CES 0 1200 25 520 µA Gate-emitter leakage c urrent I GES 15 0 25 1000 nA Internal gate resistance Input capacitance C ies Output capacitance C oes Reverse transfer capac itance C res Gate c harge none rg Ω 15000 f=1 MHz 0 10 25 3000 pF 260 15 Qg 600 150 25 315 nC 0,30 K/W Thermal Thermal resistance junc tion to sink R th(j-s) phase-change material ʎ =3,4W /mK IGBT Switching Turn-on delay time t d(on) R goff = 4 Ω Rise time Turn-off delay time tr R gon = 4 Ω t d(off) ±15 Fall time tf Turn-on energy (per pulse) E on Turn-off energy (per pulse) E off Copyright Vincotech Q rFWD = 9,8 µC Q rFWD = 22,5 µC Q rFWD = 27,7 µC 3 600 150 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 93 93 93 12 14 14 164 206 217 54 84 94 3,275 5,448 6,152 8,195 12,580 13,972 ns mWs 28 Jan. 2016 / Revision 1 30-P2126PA150NB-L280F69Y datasheet Characteristic Values Parameter Conditions Symbol VCE [V] VGE [V] VGS [V] VGS [V] Vr [V] Value IC [A] ID [A] IF [A] Tj[°C] Min Unit Typ Max 25 2,65 3,3 125 2,33 150 2,21 Inverter Diode Static Forward voltage Reverse leakage c urrent 150 VF 25 1200 Ir V 50 µA Thermal Thermal resistance junc tion to sink R th(j-s) phase-change material ʎ = 3,4 W /mK 0,48 K/W FWD Switching Peak recovery current I RRM Reverse recovery time t rr Recovered charge Qr di /dt = 11991 A/µs Reverse recovered energy Peak rate of fall of recovery current di /dt = 9881 A/µs ±15 di /dt = 9919 A/µs E rec (di rf/dt )max 600 150 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 193 231 239 118 149 298 9,779 22,517 27,727 4,514 11,033 13,728 14448 6217 5397 A ns µC mWs A/µs Thermistor Rated resistance 25 R Deviation of R100 ΔR/R Power dissipation P R100=1486 Ω 100 Power dissipation constant 22 -12 kΩ +14 % 25 200 mW 25 2 mW/K B-value B(25/50) Tol. ±3% 25 3950 K B-value B(25/100) Tol. ±3% 25 3998 K Vincotech NTC Reference Copyright Vincotech B 4 28 Jan. 2016 / Revision 1 30-P2126PA150NB-L280F69Y datasheet Inverter Switch Characteristics Typical output characteristics IGBT Typical output characteristics I C = f(V CE) IGBT I C = f(V CE) 500 I C (A) I C (A) 500 400 400 300 300 200 200 100 100 0 0 0 1 2 tp = 250 µs V GE = 15 V 3 T j: 4 V C E (V) 0 5 1 2 4 5 V C E (V) 25 °C tp = 250 125 °C Tj = 150 150 °C V GE from 7 V to 17 V in steps of 1 V Typical transfer characteristics 3 IGBT µs °C Transient Thermal Impedance as function of Pulse duration I C = f(V GE) IGBT Z th(j-s) = f(t p) 150 Z t h( jj--s)(K/W) I C (A) 100 120 10-1 90 60 0,5 10-2 0,2 0,1 0,05 30 0,02 0,01 0,005 0 10-3 10-5 0 0 2 4 6 8 10 12 10-4 10-3 10-2 V G E (V) tp = 100 µs V CE = 10 V T j: 25 °C D = 125 °C R th(j-s) = 150 °C Copyright Vincotech 10-1 100 101 t p (s) 102 tp / T 0,30 K/W IGBT thermal model values 5 R (K/W) 3,25E-02 τ (s) 4,87E+00 4,48E-02 1,00E+00 8,25E-02 1,81E-01 1,03E-01 4,23E-02 2,08E-02 9,26E-03 1,39E-02 9,91E-04 28 Jan. 2016 / Revision 1 30-P2126PA150NB-L280F69Y datasheet Inverter Switch Characteristics Gate voltage vs Gate charge IGBT Safe operating area V GE = f(Q G ) 1000 I C (A) 20 V G E (V) IGBT I C = f(V CE) 600V 100ms 17,5 1ms 10ms 10µs 100µs DC 100 15 12,5 10 10 1 7,5 5 0,1 2,5 0,01 0 0 100 200 300 1 400 10 100 1000 10000 Q G (nC) V C E (V) At At I C= 150 D = A Short circuit duration as a function of V GE IGBT 80 ºC V GE = Tj = ±15 T jmax V ºC Typical short circuit current as a function of V GE t pSC = f(V GE) IGBT I SC = f(V GE) 16 1000 I sc (A) t pS C (µS) single pulse Ts = 14 900 800 12 700 10 600 500 8 400 6 300 4 200 2 100 0 0 12 13 14 15 16 17 12 18 13 14 V G E (V) 15 16 17 18 V G E (V) At At V CE = 850 V V CE ≤ 850 V Tj ≤ 150 ºC Tj ≤ 150 ºC Copyright Vincotech 6 28 Jan. 2016 / Revision 1 30-P2126PA150NB-L280F69Y datasheet Inverter Diode Characteristics FWD Typical forward characteristics FWD Transient thermal impedance as a function of pulse width I F = f(V F) Z th(j-s) = f(t p) 500 Z t h(j h(j--s) (K/W) IF (A) 100 400 300 10-1 200 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 100 10-2 0 0 1 2 3 4 10-4 5 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 0,48 K/W 150 °C FWD thermal model values R (K/W) 3,3940E-02 τ (s) 5,9820E+00 6,7470E-02 9,9750E-01 9,7960E-02 2,1040E-01 1,7660E-01 5,1180E-02 6,2590E-02 1,7090E-02 2,4720E-02 2,4350E-03 1,9140E-02 6,5960E-04 Thermistor Characteristics Typical Thermistor resistance values Thermistor typical temperature characteristic Typical NTC characteristic as a function of temperature R T = f(T ) NTC-typical temperature characteristic R (Ω) 25000 20000 15000 10000 5000 0 25 50 75 100 125 T (°C) Copyright Vincotech 7 28 Jan. 2016 / Revision 1 30-P2126PA150NB-L280F69Y datasheet Inverter Switching Characteristics Figure 1. IGBT Figure 2. IGBT Typical swit ching energy losses as a f unct ion of gate resistor E = f(I C) E = f(rg) 25 E ( mWs) E (mWs) Typical swit ching energy losses as a f unction of collector current Eoff 20 25 20 Eoff 15 Eon Eon 15 Eoff Eo n Eoff E off Eon Eon 10 10 Eo ff Eo n 5 5 0 0 0 50 100 150 200 250 300 0 I C (A) 25 °C With an induc tive load at 600 V V CE = ±15 V V GE = R gon = 4 Ω R goff = 4 Ω 8 150 °C IC = Figure 3. FWD 150 12 A Figure 4. FWD E rec = f(I c) E rec = f(r g ) 25 16 E (mWs) 20 150 °C Typical reverse recovered energy loss as a f unct ion of gat e resist or Erec 20 R g ( Ω) 125 °C T j: Typical reverse recovered energy loss as a f unction of collector current E (mWs) 16 25 °C With an inductive load at 600 V V CE = ±15 V V GE = 125 °C T j: 4 Erec 12 Erec Erec 15 8 10 Erec Erec 4 5 0 0 0 50 100 With an induc tive load at 600 V V CE = ±15 V V GE = R gon = 4 Copyright Vincotech 150 200 250 I C (A) 0 300 25 °C T j: 4 8 With an inductive load at 600 V V CE = ±15 V V GE = 125 °C 150 °C Ω IC= 8 150 12 16 r g (Ω) 20 25 °C T j: 125 °C 150 °C A 28 Jan. 2016 / Revision 1 30-P2126PA150NB-L280F69Y datasheet Inverter Switching Characteristics Figure 5. IGBT Figure 6. IGBT Typical swit ching t imes as a f unct ion of collector current Typical swit ching t imes as a f unct ion of gate resistor t = f(I C) t = f(r g) 1 t ( μs) t ( μ s) 1 td(off ) td(on) td(off ) td(on) 0,1 tf 0,1 tf tr tr 0,01 0,01 0,001 0,001 0 50 100 150 200 250 300 0 (A) I C (A) With an induc tive load at 150 °C Tj= 600 V V CE = 4 8 12 16 r g (Ω) 20 With an inductive load at 150 °C Tj= 600 V V CE = V GE = ±15 V V GE = ±15 V R gon = 4 Ω IC = 150 A R goff = 4 Ω Figure 7. FWD Figure 8. FWD Typical reverse recovery t ime as a f unction of collector current Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or t rr = f(I C) t rr = f(R gon) 0,4 t rr (μs) t r r (μs) 1 trr trr 0,8 0,3 trr 0,6 trr 0,2 trr trr 0,4 0,1 0,2 0 0 0 50 100 150 200 250 300 0 I C (A) At 600 V V GE = ±15 V R gon = 4 Ω V CE= Copyright Vincotech 8 12 16 20 R g on (Ω) 25 °C T j: 4 600 V 125 °C V GE = ±15 V 150 °C IC= 150 A At 9 V CE = 25 °C T j: 125 °C 150 °C 28 Jan. 2016 / Revision 1 30-P2126PA150NB-L280F69Y datasheet Inverter Switching Characteristics Figure 9. FWD Figure 10. FWD Typical recoved charge as a f unct ion of IGBT t urn on gate resistor Q r = f(I C) Q r = f(R gon) 50 Q r (µC) Q r (μ C) Typical recovered charge as a f unction of collector current 40 Qr 40 Qr 30 Qr Qr 30 20 20 Qr Qr 10 10 At 0 0 0 50 100 150 200 250 300 0 4 8 12 16 20 R g o n (Ω) I C (A) 600 V V GE = ±15 V R gon = 4 Ω V CE = At 25 °C T j: At VCE= 600 V 125 °C V GE = ±15 V 150 °C I C= 150 A Figure 11. FWD 25 °C T j: 125 °C 150 °C Figure 12. FWD Typical peak reverse recovery current current as a f unct ion of collect or current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or I RM = f(I C) I RM = f(R gon) 400 I R M (A) I R M (A) 300 IRM IR M 250 300 I RM 200 200 150 100 IRM I RM IRM 100 50 0 0 0 At 50 100 600 V V GE = ±15 V R gon = 4 Ω V CE = Copyright Vincotech 150 200 250 I C (A) 0 300 8 12 16 20 R g o n (Ω) 25 °C T j: 4 600 V 125 °C V GE = ±15 V 150 °C IC= 150 A At 10 V CE = 25 °C T j: 125 °C 150 °C 28 Jan. 2016 / Revision 1 30-P2126PA150NB-L280F69Y datasheet Inverter Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) d i /d t (A/ (A/µ µs) d i /dt (A/ (A/µs) s) 20000 di F / dt dir r /dt 16000 35000 di F / dt di r r/ dt 30000 25000 12000 20000 15000 8000 10000 4000 5000 0 0 0 50 100 150 200 250 0 300 4 8 12 16 I C (A) 600 V V GE = ±15 V R gon = 4 Ω V CE = At 25 °C T j: At V CE = 600 V 125 °C V GE = ±15 V 150 °C I C= 150 A Figure 15. 20 R g o n (Ω) 25 °C T j: 125 °C 150 °C IGBT Reverse bias saf e operating area I C = f(V CE) I C (A) 350 I C MAX I c CHIP 300 250 MODULE 200 Ic 150 V CE MAX 100 50 0 0 200 400 600 800 1000 1200 1400 V C E (V) At 175 °C R gon = 4 Ω R goff = 4 Ω Tj = Copyright Vincotech 11 28 Jan. 2016 / Revision 1 30-P2126PA150NB-L280F69Y datasheet Inverter Switching Definitions General conditions = 125 °C = 4Ω Tj R gon = R goff Figure 1. IGBT 4Ω Figure 2. Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f ) IGBT Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon) 125 300 tdoff % % VCE IC 250 100 VCE 90% VGE 90% 200 75 150 IC 50 tEoff 100 VCE VGE tdon 25 50 IC 1% 0 -25 -0,1 0 0,1 0,2 VCE 3% IC 10% VGE 10% 0 VGE tEon 0,3 0,4 0,5 0,6 0,7 -50 2,98 0,8 3,01 3,04 3,07 3,1 3,13 3,16 3,19 t (µs) -15 V V GE (100%) = 15 V V C (100%) = 600 V I C (100%) = 150 A t doff = 0,206 t Eoff = Figure 3. 0,751 V GE (0%) = 3,22 3,25 t (µs) -15 V V GE (100%) = 15 V V C (100%) = 600 V I C (100%) = 150 A µs t don = 0,093 µs µs t Eon = Figure 4. 0,237 µs V GE (0%) = IGBT Turn-of f Swit ching Wavef orms & def init ion of t f IGBT Turn-on Swit ching Wavef orms & def init ion of tr 125 300 fitted % VCE IC % IC 250 100 IC 90% 200 75 IC 60% 150 50 VCE IC 40% 100 IC 90% tr 25 50 IC10% 0 tf IC 10% 0 -25 0 0,05 0,1 0,15 0,2 0,25 0,3 0,35 -50 3,05 0,4 t ( µs) V C (100%) = 600 V I C (100%) = 150 tf= 0,084 Copyright Vincotech 3,08 3,11 3,14 3,17 3,2 t (µs) V C (100%) = 600 V A I C (100%) = 150 A µs tr = 0,014 µs 12 28 Jan. 2016 / Revision 1 30-P2126PA150NB-L280F69Y datasheet Inverter Switching Definitions Figure 5. IGBT Figure 6. Turn-of f Swit ching Wavef orms & def init ion of t Eof f IGBT Turn-on Swit ching Wavef orms & def init ion of tEon 125 150 % Poff Eoff 100 Pon % IC 1% 125 Eon 100 75 75 50 50 25 25 VGE 90% VGE 10% 0 tEoff -25 -0,1 0,05 0,2 0,35 VCE 3% 0 0,5 0,65 -25 2,95 0,8 tEon 3 3,05 3,1 3,15 P off (100%) = 90,12 kW P on (100%) = 90,12 kW E off (100%) = 12,58 mJ E on (100%) = 5,45 mJ t Eoff = 0,75 µs t Eon = 0,24 µs Figure 7. 3,2 3,25 3,3 t ( µs) t (µs) FWD Turn-of f Swit ching Wavef orms & def init ion of t rr 150 % Id 100 trr 50 fitted Vd 0 IRRM 10% -50 -100 IRRM 90% IRRM 100% -150 -200 3,05 3,1 3,15 3,2 3,25 3,3 3,35 t (µs) V d (100%) = 600 I d (100%) = 150 A I RRM (100%) = -231 A t rr = 0,149 µs Copyright Vincotech V 13 28 Jan. 2016 / Revision 1 30-P2126PA150NB-L280F69Y datasheet Inverter Switching Definitions Figure 8. FWD Figure 9. Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 125 150 % % Id Erec Qrr 100 100 50 tErec 75 tQrr 0 50 -50 25 -100 0 Prec -150 2,8 3 3,2 3,4 3,6 3,8 4 4,2 -25 4,4 3 t (µs) 3,2 3,4 3,6 4 4,2 t (µs) I d (100%) = 150 A P rec (100%) = 90,12 Q rr (100%) = 22,52 µC E rec (100%) = 11,03 mJ t Qrr = 1,00 µs t Erec = 1,00 µs Copyright Vincotech 3,8 14 kW 28 Jan. 2016 / Revision 1 30-P2126PA150NB-L280F69Y datasheet Ordering Code & Marking Version with thermal paste 17mm housing with Press-fit pins Ordering Code 30-P2126PA150NB-L280F69Y-/3/ NN-NNNNNNNNNNNNNN TTTTTTVV WWYY UL Vin LLLLL SSSS Text Datamatrix Name Date code UL & VIN Lot Serial NN-NNNNNNNNNNNNNN-TTTTTTVV WWYY UL VIN LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin table [mm] Pin X Y Function Pin X Y 1 0,9 0 S11 30 68,5 0 Function DC+3 2 0,9 3 G11 31 68,5 2,7 DC+3 3 3,9 0 DC-1 32 64,7 36 G16 4 3,9 2,7 DC-1 33 61,7 36 S16 5 3,9 5,4 DC-1 34 58,7 36 PH3 6 6,6 0 DC-1 35 56 36 PH3 7 15,2 0 DC+1 36 53,3 36 PH3 8 15,2 2,7 DC+1 37 50,6 36 PH3 9 17,9 0 DC+1 38 39,4 36 G14 10 17,9 3 DC+1 39 36,4 36 S14 11 12 13 26,2 26,2 29,2 0 2,7 0 S13 G13 40 41 33,4 30,7 36 36 PH2 PH2 DC-2 42 28 36 PH2 14 29,2 2,7 DC-2 43 25,3 36 PH2 15 29,2 5,4 DC-2 44 16 31,9 0 DC-2 45 14,1 11,1 36 36 G12 S12 17 32,2 4,05 NTC 46 8,1 36 PH1 18 40,5 0 DC+2 47 5,4 36 PH1 19 40,5 2,7 20 43,2 0 DC+2 DC+2 48 49 2,7 0 36 36 PH1 PH1 21 43,2 2,7 DC+2 22 51,5 0 S15 23 51,5 3 G15 24 54,5 0 DC-3 25 54,5 2,7 DC-3 26 54,5 5,4 DC-3 27 57,2 0 DC-3 28 65,8 0 29 65,8 2,7 DC+3 DC+3 Copyright Vincotech 15 28 Jan. 2016 / Revision 1 30-P2126PA150NB-L280F69Y datasheet Pinout Identification ID Component Voltage Current Function T11,T12,T13 T14,T15,T16 IGBT 1200 V 150 A Inverter Switch D11,D12,D13 D14,D15,D16 FWD 1200 V 150 A Inverter Diode NTC NTC Copyright Vincotech Comment Thermistor 16 28 Jan. 2016 / Revision 1 30-P2126PA150NB-L280F69Y datasheet Packaging instruction Standard packaging quantity (SPQ) 42 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 2 packages see vincotech.com website. Package data Package data for flow 2 packages see vincotech.com website. UL recognition and file number This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotec h.com website. Document No.: Date: 30-P2126PA150NB-L280F69Y-D1-14 28 Jan. 2016 Modification: Pages DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 17 28 Jan. 2016 / Revision 1