V23990-P729-F48-PM V23990-P729-F49-PM datasheet flow PACK 0 1200 V / 40 A Features flow 0 housing ● Low inductance layout ● Clip-in PCB mounting 12mm housing 17mm housing Schematic Target applications ● Solar Types ● V23990-P729-F48-PM ● V23990-P729-F49-PM Maximum Ratings Tj = 25 °C, unless otherwise specified Parameter Symbol Condition Value Unit 1200 V 43 A 120 A 113 W ±20 V H-Bridge Switch Collector-emitter voltage Collector current VCES IC Tj = Tjmax Ts = 80 °C Repetitive peak collector current ICRM tp limited by Tjmax Total power dissipation Ptot Tj = Tjmax Gate-emitter voltage VGES Short circuit ratings Maximum Junction Temperature Copyright Vincotech tSC Tj ≤ 150°C VCC VGE = 15V Ts = 80 °C Tjmax 1 10 µs 800 V 175 °C 24 May. 2016 / Revision 2 V23990-P729-F48-PM V23990-P729-F49-PM datasheet Maximum Ratings Tj = 25 °C, unless otherwise specified Parameter Symbol Condition Value Unit 1200 V H-Bridge Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current VRRM IF Tj = Tjmax Ts = 80 °C 25 A Total power dissipation Ptot Tj = Tjmax Ts = 80 °C 61 W Maximum Junction Temperature Tjmax 175 °C VMAX 1000 V Top -55…+125 °C Storage temperature Tstg -40…+125 °C Operation temperature under switching condition Tjop -40…(Tjmax - 25) °C 4000 V min. 12,7 mm 9,55 / min. 12,7 mm Capacitor (DC) Maximum DC voltage Operation Temperature Module Properties Thermal Properties Isolation Properties Isolation voltage Visol DC Test Voltage tp = 2 s Creepage distance Clearance Comparative Tracking Index Copyright Vincotech 12mm / 17mm housing CTI > 200 2 24 May. 2016 / Revision 2 V23990-P729-F48-PM V23990-P729-F49-PM datasheet Characteristic Values Parameter Symbol Conditions VGE [V] VCE [V] VGS [V] VDS [V] Value IC [A] ID [A] Tj [°C] Unit Min Typ Max 5,3 5,8 6,3 1,78 1,96 2,29 2,42 H-Bridge Switch Static Gate-emitter threshold voltage VGE(th) Collector-emitter saturation voltage VCEsat VGE = VCE 15 0,0015 25 40 25 125 V V Collector-emitter cut-off current ICES 0 1200 25 5 µA Gate-emitter leakage current IGES 20 0 25 120 nA Internal gate resistance rg none Input capacitance Cies 2330 Output capacitance Coes Reverse transfer capacitance Cres Gate charge Qg f = 1 MHz 0 25 25 150 Ω pF 130 15 960 40 25 185 nC 0,84 K/W Thermal Thermal resistance junction to sink Rth(j-s) phase-change material ʎ = 3,4 W/mK IGBT Switching Turn-on delay time Rise time Turn-off delay time td(on) tr Rgoff = 8 Ω Rgon = 8 Ω td(off) ±15 Fall time tf Turn-on energy (per pulse) Eon Turn-off energy (per pulse) Eoff Copyright Vincotech QrFWD = 2,7 µC QrFWD = 4,8 µC QrFWD = 5,8 µC 3 600 40 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 64 65 66 15 19 18 162 216 230 26 63 70 1,542 2,194 2,410 1,321 2,287 2,529 ns mWs 24 May. 2016 / Revision 2 V23990-P729-F48-PM V23990-P729-F49-PM datasheet Characteristic Values Parameter Symbol Conditions VGE [V] VCE [V] VGS [V] VDS [V] Value IC [A] ID [A] Tj [°C] Min Unit Typ Max 2,47 2,49 2,74 H-Bridge Diode Static Forward voltage VF Reverse leakage current Ir 25 25 150 25 150 1200 60 3300 V µA Thermal Thermal resistance junction to sink Rth(j-s) phase-change material λ = 3,4 W/mK 1,56 K/W FWD Switching Peak recovery current IRRM Reverse recovery time trr Recovered charge Qr Reverse recovered energy Erec Peak rate of fall of recovery current di/dt = 3019 A/µs di/dt = 3104 A/µs ±15 di/dt = 2972 A/µs (dirf/dt)max 600 40 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 48 55 60 101 222 251 2,701 4,784 5,825 1,132 2,113 2,604 3780 2583 2658 A ns µC mWs A/µs Capacitor (DC) Capacitance C 56 Tolerance -20 Climatic category nF +20 % 55/125/56 Thermistor Rated resistance R Deviation of R100 ΔR/R Power dissipation 25 R100 = 1486 Ω 100 P Power dissipation constant 22 -12 kΩ +14 % 25 200 mW 25 2 mW/K B-value B(25/50) Tol. ±3% 25 3950 K B-value B(25/100) Tol. ±3% 25 3998 K Vincotech NTC Reference Copyright Vincotech B 4 24 May. 2016 / Revision 2 V23990-P729-F48-PM V23990-P729-F49-PM datasheet H-Bridge Switch Characteristics Typical output characteristics IGBT Typical output characteristics I C = f(V CE) IGBT I C = f(V CE) 120 I C (A) I C (A) 120 90 90 60 60 30 30 0 0 0 1 2 3 4 0 5 1 2 3 4 5 V C E (V) V C E (V) tp = 250 µs V GE = 15 V T j: 25 °C tp = 250 125 °C Tj = 125 V GE from 7 V to 17 V in steps of 1 V Typical transfer characteristics IGBT µs °C Transient Thermal Impedance as function of Pulse duration I C = f(V GE) IGBT Z th(j-s) = f(t p) 40 Z t h(j h(j--s)(K/W) I C (A) 100 30 10-1 20 0,5 10-2 0,2 0,1 10 0,05 0,02 0,01 0,005 0 10-3 10-5 0 0 2 4 6 8 10 12 10-4 10-3 10-2 V G E (V) tp = 100 µs V CE = 10 V T j: 25 °C D = 125 °C R th(j-s) = 10-1 100 101 t p (s) 102 tp / T 0,84 K/W IGBT thermal model values Copyright Vincotech 5 R (K/W) 1,18E-01 τ (s) 8,20E-01 4,24E-01 1,32E-01 2,01E-01 4,79E-02 6,46E-02 9,26E-03 3,72E-02 8,03E-04 24 May. 2016 / Revision 2 V23990-P729-F48-PM V23990-P729-F49-PM datasheet H-Bridge Switch Characteristics Gate voltage vs Gate charge IGBT Safe operating area V GE = f(Q G) IGBT I C = f(V CE) 16 I C (A) V G E (V) 1000 240 V 14 1ms 10ms 100 10µs 100µs 100ms 12 DC 960 V 10 10 8 1 6 4 0,1 2 0 0,01 0 50 100 150 200 250 1 10 100 1000 10000 Q G (nC) V C E (V) At At I C= 40 A Short circuit duration as a function of V GE IGBT single pulse Ts = 80 ºC V GE = Tj = ±15 T jmax V ºC Typical short circuit current as a function of V GE t pSC = f(V GE) IGBT I SC = f(V GE) 45 300 I sc (A) t pS C (µS) D = 40 250 35 200 30 25 150 20 100 15 10 50 5 0 0 10 12 14 16 18 10 20 V G E (V) Copyright Vincotech 11 12 13 14 15 16 17 18 V G E (V) 6 24 May. 2016 / Revision 2 V23990-P729-F48-PM V23990-P729-F49-PM datasheet H-Bridge Diode Characteristics figure 1. FWD figure 2. FWD Transient thermal impedance as a function of pulse width I F = f(V F) Z th(j-s) = f(t p) 75 101 Z t h(j h(j--s) (K/W) IF (A) Typical forward characteristics 60 100 45 30 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 15 10-2 0 0 1 2 3 4 10-4 5 10-3 10-2 VF (V) tp = 250 µs T j: 25 10-1 100 101 102 t p (s) °C 150 °C D= tp / T R th(j-s) = 1,56 K/W FWD thermal model values R (K/W) 4,65E-02 τ (s) 4,86E+00 1,06E-01 8,11E-01 4,71E-01 1,09E-01 4,83E-01 3,07E-02 2,34E-01 7,03E-03 1,81E-01 1,25E-03 3,38E-02 3,28E-04 Thermistor Characteristics Typical Thermistor resistance values Thermistor typical temperature characteristic Typical NTC characteristic as a function of temperature R T = f(T ) NTC-typical temperature characteristic R (Ω) 25000 20000 15000 10000 5000 0 25 50 75 100 125 T (°C) Copyright Vincotech 7 24 May. 2016 / Revision 2 V23990-P729-F48-PM V23990-P729-F49-PM datasheet H-Bridge Switching Characteristics Figure 1. IGBT Figure 2. IGBT Typical swit ching energy losses as a f unct ion of gate resistor E = f(I C) E = f(rg) 6 Eon 5 E ( mWs) E (mWs) Typical swit ching energy losses as a f unction of collector current Eon 6 5 Eon Eon Eo n Eoff 4 4 Eo n Eoff 3 3 Eoff Eoff E o ff 2 2 1 1 0 Eo ff 0 0 10 20 30 40 50 60 70 80 0 I C (A) 25 °C With an induc tive load at 600 V V CE = V GE = ±15 V R gon = 8 Ω R goff = 8 Ω 125 °C T j: 4 8 12 16 150 °C V GE = IC = Figure 3. FWD ±15 V 40 A 20 T j: 32 R g ( Ω) FWD E rec = f(I c) E rec = f(r g ) E ( mWs) 4 Erec Erec 36 125 °C Figure 4. Typical reverse recovered energy loss as a f unct ion of gat e resist or E (mWs) 28 150 °C Typical reverse recovered energy loss as a f unction of collector current 3 24 25 °C With an inductive load at 600 V V CE = 4 3 Erec 2 2 Erec Erec 1 1 Erec 0 0 0 10 20 30 With an induc tive load at 600 V V CE = ±15 V V GE = R gon = 8 Copyright Vincotech 40 50 60 70 I C (A) 0 80 25 °C T j: 4 8 12 With an inductive load at 600 V V CE = ±15 V V GE = 125 °C 150 °C Ω IC= 8 40 16 20 24 28 32 r g (Ω) 36 25 °C T j: 125 °C 150 °C A 24 May. 2016 / Revision 2 V23990-P729-F48-PM V23990-P729-F49-PM datasheet H-Bridge Switching Characteristics Figure 5. IGBT Figure 6. IGBT Typical swit ching t imes as a f unct ion of collector current Typical swit ching t imes as a f unct ion of gate resistor t = f(I C) t = f(r g) 1 t ( μs) t ( μ s) 1 td(off ) td(off ) td(on) 0,1 0,1 tf tfd(on) tr tr 0,01 0,01 0,001 0,001 0 10 20 30 40 50 60 70 80 0 (A) I C (A) With an induc tive load at 150 °C Tj= 600 V V CE = 4 8 12 16 20 24 28 32 r g (Ω) 36 With an inductive load at 150 °C Tj= 600 V V CE = V GE = ±15 V V GE = R gon = 8 Ω IC = R goff = 8 Ω Figure 7. FWD ±15 V 40 A Figure 8. FWD Typical reverse recovery t ime as a f unction of collector current Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or t rr = f(I C) t rr = f(R gon) 0,5 t rr (μs) t rr (μs) 0,8 trr trr 0,4 0,6 trr trr 0,3 trr 0,4 0,2 trr 0,2 0,1 0 0 0 10 20 30 40 50 60 70 80 0 I C (A) At 600 V V GE = ±15 V R gon = 8 Ω V CE= Copyright Vincotech 8 12 16 20 24 28 32 36 R g on (Ω) 25 °C T j: 4 At V CE = 125 °C V GE = 150 °C IC= 9 600 V ±15 V 40 A 25 °C T j: 125 °C 150 °C 24 May. 2016 / Revision 2 V23990-P729-F48-PM V23990-P729-F49-PM datasheet H-Bridge Switching Characteristics Figure 9. FWD Figure 10. Typical recovered charge as a f unction of collector current Q r = f(I C) Q r = f(R gon) Q r (µC) 8 Q r (μ C) FWD Typical recoved charge as a f unct ion of IGBT t urn on gate resistor Qr Qr 6 8 6 Qr Qr Qr 4 4 2 2 0 At Qr 0 0 10 20 30 40 50 60 70 80 0 4 8 12 16 20 24 28 32 I C (A) 600 V V GE = ±15 V R gon = 8 Ω At V CE = 25 °C T j: At VCE= 125 °C V GE = 150 °C I C= Figure 11. FWD 600 V ±15 V 40 A 25 °C T j: 125 °C 150 °C Figure 12. FWD Typical peak reverse recovery current current as a f unct ion of collect or current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or I RM = f(I C) I RM = f(R gon) 80 36 R g o n (Ω) I R M (A) I R M (A) 150 IRM 60 120 I RM IRM 90 40 60 20 IRM IRM IRM 30 0 0 0 At 10 20 30 600 V V GE = ±15 V R gon = 8 Ω V CE = Copyright Vincotech 40 50 60 70 I C (A) 0 80 T j: 4 8 12 16 20 24 28 32 36 R g o n (Ω) 25 °C At V CE = 125 °C V GE = 150 °C IC= 10 600 V ±15 V 40 A 25 °C T j: 125 °C 150 °C 24 May. 2016 / Revision 2 V23990-P729-F48-PM V23990-P729-F49-PM datasheet H-Bridge Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) 15000 5000 d i /d t (A/ (A/µ µs) d i /dt (A/ (A/µs) s) Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current di F / dt di r r /dt di F / dt di r r/ dt 12000 4000 3000 9000 2000 6000 1000 3000 0 0 0 10 20 30 40 50 60 70 0 80 4 8 12 16 20 24 I C (A) 600 V V GE = ±15 V R gon = 8 Ω At V CE = 25 °C T j: At V CE = 125 °C V GE = 150 °C I C= Figure 15. 600 V ±15 V 40 A 28 32 36 R g o n (Ω) 25 °C T j: 125 °C 150 °C IGBT Reverse bias saf e operating area I C = f(V CE) I C MAX 80 I c CHIP I C (A) 90 70 60 MODULE 50 Ic 40 30 V CE MAX 20 10 0 0 200 400 600 800 1000 1200 1400 V C E (V) At 175 °C R gon = 8 Ω R goff = 8 Ω Tj = Copyright Vincotech 11 24 May. 2016 / Revision 2 V23990-P729-F48-PM V23990-P729-F49-PM datasheet H-Bridge Switching Characteristics Tj R gon = = 150 °C 8Ω R goff = 8Ω Figure 1. IGBT Figure 2. Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f ) IGBT Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon) 120 250 % tdoff 100 % VCE IC 200 VCE 90% VGE 90% 80 150 IC 60 VCE VGE 100 tEoff 40 VGE tdon 50 20 IC 1% VCE 3% IC 10% VGE 10% 0 0 tEon -20 -0,1 0 0,1 0,2 0,3 0,4 -50 2,97 0,5 3 3,03 3,06 3,09 3,12 3,15 3,18 3,21 t (µs) 3,24 3,27 t (µs) -15 V V GE (100%) = 15 V V C (100%) = 600 V I C (100%) = 40 A I C (100%) = t doff = 0,230 µs t don = 0,066 µs t Eoff = Figure 3. 0,423 µs t Eon = Figure 4. 0,256 µs V GE (0%) = -15 V V GE (100%) = 15 V V C (100%) = 600 V 40 A V GE (0%) = IGBT Turn-of f Swit ching Wavef orms & def init ion of t f IGBT Turn-on Swit ching Wavef orms & def init ion of tr 250 125 fitted % VCE IC IC % 100 200 IC 90% 75 150 IC 60% VCE 50 100 IC 90% tr IC 40% 25 50 IC10% 0 IC 10% 0 tf -25 0,05 0,1 0,15 0,2 0,25 0,3 0,35 -50 0,4 3 t ( µs) 3,05 3,1 3,15 3,25 t (µs) V C (100%) = 600 V V C (100%) = 600 I C (100%) = 40 A I C (100%) = 40 A tf= 0,070 µs tr = 0,018 µs Copyright Vincotech 3,2 12 V 24 May. 2016 / Revision 2 V23990-P729-F48-PM V23990-P729-F49-PM datasheet H-Bridge Switching Characteristics Figure 5. IGBT Figure 6. Turn-of f Swit ching Wavef orms & def init ion of t Eof f IGBT Turn-on Swit ching Wavef orms & def init ion of tEon 125 225 % IC 1% 100 % 200 Eoff Pon 175 Poff 150 75 125 Eon 50 100 75 25 50 VGE 90% 25 0 VGE 10% tEoff VCE 3% tEon 0 -25 -25 -0,1 0 0,1 0,2 0,3 0,4 2,9 0,5 3 3,1 3,2 P off (100%) = 24,01 kW P on (100%) = 24,01 kW E off (100%) = 2,53 mJ E on (100%) = 2,41 mJ t Eoff = 0,42 µs t Eon = 0,26 µs Figure 7. 3,3 3,4 t ( µs) t (µs) FWD Turn-of f Swit ching Wavef orms & def init ion of t rr 150 % Id 100 trr 50 Vd fitted IRRM 10% 0 -50 -100 IRRM 90% IRRM 100% -150 -200 3 3,1 3,2 3,3 3,4 t (µs) V d (100%) = 600 V I d (100%) = 40 A I RRM (100%) = -60 A t rr = 0,251 µs Copyright Vincotech 13 24 May. 2016 / Revision 2 V23990-P729-F48-PM V23990-P729-F49-PM datasheet H-Bridge Switching Characteristics Figure 8. FWD Figure 9. Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 150 150 % % Id Qrr Erec 100 100 tErec tQrr 50 50 Prec 0 0 -50 -50 -100 -100 -150 2,8 3 3,2 3,4 3,6 3,8 4 4,2 -150 4,4 3 t (µs) 3,2 3,4 3,6 4 4,2 t (µs) I d (100%) = 40 A P rec (100%) = 24,01 kW Q rr (100%) = 5,83 µC E rec (100%) = 2,60 mJ t Qrr = 1,00 µs t Erec = 1,00 µs Copyright Vincotech 3,8 14 24 May. 2016 / Revision 2 V23990-P729-F48-PM V23990-P729-F49-PM datasheet Ordering Code & Marking Version without thermal paste PCM 12mm housing with solder pins with thermal paste PCM 12mm housing with solder pins without thermal paste PCM 17mm housing with solder pins Ordering Code V23990-P729-F48-PM V23990-P729-F48-/3/-PM V23990-P729-F49-PM VIN WWYY NNNNNNNVV UL LLLLL SSSS Text Datamatrix VIN Date code Name&Ver UL Lot Serial VIN WWYY NNNNNNNVV UL LLLLL SSSS Name&Ver Lot number Serial Date code NNNNNNNVV LLLLL SSSS WWYY Outline Pin table [mm] Pin X Y Function 1 0 22,5 G1 2 2,9 22,5 S1 3 8,3 22,5 DC- 4 10,8 22,5 DC- 5 19,6 22,5 DC+ 6 22,1 22,5 DC+ 7 29,1 22,5 S2 8 32 22,5 G2 9 33,5 17,8 OUT1 10 33,5 15,3 OUT1 11 33,5 7,2 OUT2 12 33,5 4,7 OUT2 13 32 0 G4 14 29,1 0 S4 15 22,1 0 DC+ 16 19,6 0 DC+ 17 10,8 0 DC- 18 8,3 0 DC- 19 2,9 0 S3 20 0 0 G3 21 0 8 22 0 14,5 Th1 Th2 Copyright Vincotech 12mm housing 17mm housing 15 24 May. 2016 / Revision 2 V23990-P729-F48-PM V23990-P729-F49-PM datasheet Pinout Identification ID Component Voltage Current Function T1,T2,T3,T4 IGBT 1200 V 40 A H-Bridge Switch 25 A D1,D2,D3,D4 FWD 1200 V C1,C2 Capacitor 1000 V NTC Thermistor Copyright Vincotech Comment H-Bridge Diode H-Bridge Switch H-Bridge 16 24 May. 2016 / Revision 2 V23990-P729-F48-PM V23990-P729-F49-PM datasheet Packaging instruction Standard packaging quantity (SPQ) 135 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 0 packages see vincotech.com website. Package data Package data for flow 0 packages see vincotech.com website. UL recognition and file number This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website. Document No.: Date: Modification: Pages V23990-P729-F4x-D2-14 24 May. 2016 New brand, 17mm housig added all DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 17 24 May. 2016 / Revision 2