30-P2126PA150SC-L280F09Y datasheet flow PACK 2 1200 V / 150 A Features flow 2 17mm housing ● IGBT4 (1200V) technology for low saturation losses and improved EMC behavior ● Compact and low inductive design ● Integrated temperature sensor Schematic Target applications ● Industrial Drives Types ● 30-P2126PA150SC-L280F09Y Maximum Ratings Tj = 25 °C, unless otherwise specified Parameter Symbol Condition Value Unit 1200 V 144 A 450 A 354 W ±20 V Inverter Switch Collector-emitter voltage Collector current V CES IC T j = T jmax T s = 80 °C Repetitive peak collector current I CRM t p limited by T jmax Total power dissipation P tot T j = T jmax Gate-emitter voltage V GES Short circuit ratings Maximum Junction Temperature Copyright Vincotech T s = 80 °C t SC Tj ≤ 150°C 10 µs V CC VGE = 15V 800 V 175 °C T jmax 1 22 Jan. 2016 / Revision 1 30-P2126PA150SC-L280F09Y datasheet Parameter Symbol Condition Value Unit 1200 V 122 A 300 A 212 W Inverter Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF T j = T jmax T s = 80°C Repetitive peak forward current I FRM Total power dissipation P tot Maximum Junction Temperature T jmax 175 °C Storage temperature T stg -40…+125 °C Operation temperature under switching condition T jop -40…+(T jmax - 25) °C 4000 V Creepage distance min. 12,7 mm Clearance min. 12,7 mm T j = T jmax T s = 80°C Module Properties Thermal Properties Isolation Properties Isolation voltage Comparative Tracking Index Copyright Vincotech V isol DC Voltage t p = 2s > 200 CTI 2 22 Jan. 2016 / Revision 1 30-P2126PA150SC-L280F09Y datasheet Characteristic Values Parameter Conditions Symbol VCE [V] VGE [V] VGS [V] VGS [V] Vr [V] Value IC [A] ID [A] IF [A] Tj[°C] Unit Min Typ Max 25 5,3 5,8 6,3 25 1,58 1,93 2,07 Inverter Switch Static Gate-emitter threshold voltage V GE(th) Collec tor-emitter saturation voltage V CEsat V GE=V CE 0,0052 15 150 150 2,39 V V Collec tor-emitter c ut-off current I CES 0 1200 25 2 µA Gate-emitter leakage c urrent I GES 20 0 25 240 nA Internal gate resistance Input capacitance 5 rg 8600 C ies f=1 MHz Reverse transfer capac itance Ω 0 25 25 pF 320 C res Thermal Thermal resistance junc tion to sink R th(j-s) phase-change material ʎ = 3,4 W/mK 0,27 K/W IGBT Switching Turn-on delay time Rise time Turn-off delay time t d(on) tr R goff = 4 Ω R gon = 4 Ω t d(off) ±15 Fall time tf Turn-on energy (per pulse) E on Turn-off energy (per pulse) E off Copyright Vincotech Q rFWD = 15,6 µC Q rFWD = 29,2 µC 3 600 150 25 150 25 150 25 150 25 150 25 150 25 150 213 229 35 44 326 410 68 104 12,684 18,795 8,071 12,853 ns mWs 22 Jan. 2016 / Revision 1 30-P2126PA150SC-L280F09Y datasheet Characteristic Values Parameter Conditions Symbol VCE [V] VGE [V] VGS [V] VGS [V] Vr [V] Value IC [A] ID [A] IF [A] Tj[°C] Min Unit Typ Max 25 1,91 2,05 150 1,91 Inverter Diode Static Forward voltage VF Reverse leakage c urrent Ir 150 1200 25 26 V µA Thermal Thermal resistance junc tion to sink R th(j-s) phase-change material ʎ = 3,4 W /mK 0,45 K/W FWD Switching Peak recovery current I RRM Reverse recovery time t rr Recovered charge Reverse recovered energy Peak rate of fall of recovery current Qr di /dt = 4656 A/µs ±15 di /dt = 4044 A/µs E rec (di rf/dt )max 600 150 25 150 25 150 25 150 25 150 25 150 143 168 287 465 15,555 29,157 5,706 10,813 3267 1615 A ns µC mWs A/µs Thermistor Rated resistance 25 R Deviation of R100 ΔR/R Power dissipation P R100=1486 Ω 100 Power dissipation constant 22 -12 kΩ +14 % 25 200 mW 25 2 mW/K B-value B(25/50) Tol. ±3% 25 3950 K B-value B(25/100) Tol. ±3% 25 3998 K Vincotech NTC Reference Copyright Vincotech B 4 22 Jan. 2016 / Revision 1 30-P2126PA150SC-L280F09Y datasheet Inverter Switch Characteristics Typical output characteristics IGBT Typical output characteristics I C = f(V CE) IGBT I C = f(V CE) 500 I C (A) I C (A) 500 400 400 300 300 200 200 100 100 0 0 0 1 2 3 4 0 5 1 2 3 4 5 V C E (V) V C E (V) tp = 250 µs V GE = 15 V T j: 25 °C tp = 250 150 °C Tj = 150 V GE from 7 V to 17 V in steps of 1 V Typical transfer characteristics IGBT µs °C Transient Thermal Impedance as function of Pulse duration I C = f(V GE) IGBT Z th(j-s) = f(t p) 150 Z t h(j h(j--s)(K/W) I C (A) 100 120 10-1 90 60 0,5 10-2 0,2 0,1 0,05 30 0,02 0,01 0,005 0 10-3 10-5 0 0 2 4 6 8 10 12 10-4 10-3 10-2 V G E (V) tp = 100 µs V CE = 0 V T j: 25 °C D = 150 °C R th(j-s) = 10-1 100 101 t p (s) 102 tp / T 0,27 K/W IGBT thermal model values Copyright Vincotech 5 R (K/W) 5,73E-02 τ (s) 1,79E+00 6,23E-02 2,33E-01 9,18E-02 6,24E-02 3,46E-02 2,03E-02 1,02E-02 2,96E-03 1,19E-02 4,61E-04 22 Jan. 2016 / Revision 1 30-P2126PA150SC-L280F09Y datasheet Inverter Switch Characteristics Safe operating area IGBT I C = f(V CE) I C (A) 1000 10ms 1ms 100µs 10µs 100ms DC 100 10 1 0,1 0,01 1 10 100 1000 10000 V C E (V) At D = Ts = single pulse 80 ºC V GE = Tj = ±15 T jmax V ºC Copyright Vincotech 6 22 Jan. 2016 / Revision 1 30-P2126PA150SC-L280F09Y datasheet Inverter Diode Characteristics FWD Typical forward characteristics FWD Transient thermal impedance as a function of pulse width I F = f(V F) Z th(j-s) = f(t p) 500 Z t h(j h(j--s) (K/W) IF (A) 100 400 300 10-1 200 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 100 10-2 0 0 1 2 3 4 10-4 5 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D= tp / T 150 °C R th(j-s) = 0,45 K/W FWD thermal model values R (K/W) 3,4710E-02 τ (s) 4,6050E+00 6,6830E-02 8,7990E-01 9,3970E-02 1,7000E-01 1,6240E-01 4,0270E-02 5,3480E-02 1,3400E-02 1,5680E-02 2,0050E-03 2,1540E-02 4,0000E-04 Thermistor Characteristics Typical Thermistor resistance values Thermistor typical temperature characteristic Typical NTC characteristic as a function of temperature R T = f(T ) NTC-typical temperature characteristic R (Ω) 25000 20000 15000 10000 5000 0 25 50 75 100 125 T (°C) Copyright Vincotech 7 22 Jan. 2016 / Revision 1 30-P2126PA150SC-L280F09Y datasheet Inverter Switching Characteristics Figure 1. IGBT Figure 2. IGBT Typical swit ching energy losses as a f unction of collector current Typical swit ching energy losses as a f unct ion of gate resistor E = f(I C) E = f(rg) E ( mWs) E (mWs) 40 Eon 30 40 Eon 30 Eo n Eo n Eoff 20 20 Eoff E o ff 10 10 Eo ff 0 0 0 50 100 150 200 250 300 0 I C (A) 25 With an induc tive load at 600 V V CE = ±15 V V GE = R gon = 4 Ω R goff = 4 Ω °C 8 IC = Figure 3. FWD 150 12 R g ( Ω) A Figure 4. FWD E rec = f(I c) E rec = f(r g ) 16 12 E (mWs) Typical reverse recovered energy loss as a f unct ion of gat e resist or Erec 20 °C 150 °C T j: Typical reverse recovered energy loss as a f unction of collector current E (mWs) 16 25 With an inductive load at 600 V V CE = ±15 V V GE = 150 °C T j: 4 Erec 9 12 6 8 Erec Erec 3 4 0 0 0 50 100 With an induc tive load at 600 V V CE = ±15 V V GE = R gon = 4 Copyright Vincotech 150 200 25 T j: 250 I C (A) 0 300 °C 4 8 With an inductive load at 600 V V CE = ±15 V V GE = 150 °C Ω IC= 8 150 12 16 25 T j: r g (Ω) 20 °C 150 °C A 22 Jan. 2016 / Revision 1 30-P2126PA150SC-L280F09Y datasheet Inverter Switching Characteristics Figure 5. IGBT Figure 6. IGBT Typical swit ching t imes as a f unct ion of collector current Typical swit ching t imes as a f unct ion of gate resistor t = f(I C) t = f(r g) 1 t ( μ s) t ( μs) 1 td(off ) td(off ) td(on) td(on) tf 0,1 tf 0,1 tr tr 0,01 0,01 0 50 100 150 200 250 300 0 (A) I C (A) With an induc tive load at 150 °C Tj= 600 V V CE = 4 8 12 16 r g (Ω) 20 With an inductive load at 150 °C Tj= 600 V V CE = V GE = ±15 V V GE = ±15 V R gon = 4 Ω IC = 150 A R goff = 4 Ω Figure 7. FWD Figure 8. FWD Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or t rr = f(I C) t rr = f(R gon) 0,8 0,8 t r r (μs) t rr (μs) Typical reverse recovery t ime as a f unction of collector current trr trr 0,6 0,6 0,4 0,4 trr trr 0,2 0,2 0 0 0 50 100 150 200 250 300 0 I C (A) At 600 V V GE = ±15 V R gon = 4 Ω V CE= Copyright Vincotech 25 T j: 4 8 12 16 20 R g on (Ω) °C At 150 °C 9 600 V V GE = ±15 V IC= 150 A V CE = 25 T j: °C 150 °C 22 Jan. 2016 / Revision 1 30-P2126PA150SC-L280F09Y datasheet Inverter Switching Characteristics Figure 9. FWD Figure 10. FWD Typical recoved charge as a f unct ion of IGBT t urn on gate resistor Q r = f(I C) Q r = f(R gon) 40 Q r (µC) Q r (μ C) Typical recovered charge as a f unction of collector current Qr 30 Qr 25 30 20 20 Qr 15 Qr 10 10 5 0 At 0 0 50 100 150 200 250 300 0 4 8 12 16 20 R g o n (Ω) I C (A) 600 V V GE = ±15 V R gon = 4 Ω V CE = At 25 T j: °C At FWD V V GE = ±15 V I C= 150 A VCE= 150 °C Figure 11. 600 25 T j: °C 150 °C Figure 12. FWD Typical peak reverse recovery current current as a f unct ion of collect or current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or I RM = f(I C) I RM = f(R gon) 200 I R M (A) I R M (A) 250 IRM IRM 200 150 150 100 IRM 100 IRM 50 50 0 0 0 At 50 100 600 V V GE = ±15 V R gon = 4 Ω V CE = Copyright Vincotech 150 200 25 T j: 250 I C (A) 0 300 4 8 12 16 20 R g o n (Ω) °C At 150 °C 10 600 V V GE = ±15 V IC= 150 A V CE = 25 T j: °C 150 °C 22 Jan. 2016 / Revision 1 30-P2126PA150SC-L280F09Y datasheet Inverter Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) 5000 d i /dt (A/ (A/µ µs) d i /dt (A/ (A/µs) s) Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current diF / dt dir r/dt 4000 8000 di F / dt di r r/ dt 6000 3000 4000 2000 2000 1000 0 0 0 50 100 150 200 250 0 300 4 8 12 16 I C (A) 600 V V GE = ±15 V R gon = 4 Ω V CE = At 25 T j: °C At 150 °C Figure 15. 600 V V GE = ±15 V I C= 150 A V CE = 25 T j: 20 R g o n (Ω) °C 150 °C IGBT Reverse bias saf e operating area I C = f(V CE) I C (A) 350 I C MAX I c CHIP 300 250 MODULE 200 Ic 150 V CE MAX 100 50 0 0 200 400 600 800 1000 1200 1400 V C E (V) At 175 °C R gon = 4 Ω R goff = 4 Ω Tj = Copyright Vincotech 11 22 Jan. 2016 / Revision 1 30-P2126PA150SC-L280F09Y datasheet Inverter Switching Definitions General conditions = 150 °C = 4Ω Tj R gon R goff Figure 1. = IGBT 4Ω Figure 2. Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f ) IGBT Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon) 125 250 tdoff % % 100 IC 200 VCE 90% VGE 90% 75 150 IC 50 VCE 100 VGE tEoff tdon 25 50 VCE IC 1% VGE V GE 10% 0 -25 -0,05 0,05 0,15 0,25 0,35 0,45 0,55 0,65 -50 2,96 0,75 3,04 VCE 3% IC 10% 0 3,12 3,2 tEon 3,28 3,36 3,44 3,52 t (µs) -15 V V GE (100%) = 15 V V C (100%) = 600 V I C (100%) = 149 A t doff = t Eoff = 0,410 0,687 µs µs V GE (0%) = Figure 3. 3,6 3,68 t (µs) -15 V V GE (100%) = 15 V V C (100%) = 600 V I C (100%) = 149 A t don = t Eon = 0,229 0,609 µs µs V GE (0%) = IGBT Figure 4. Turn-of f Swit ching Wavef orms & def init ion of t f IGBT Turn-on Swit ching Wavef orms & def init ion of tr 125 250 fitted % 100 % 200 IC IC 90% 75 150 IC 60% VCE 50 100 IC 90% IC 40% 25 tr 50 VCE IC10% IC 0 IC 10% 0 tf -25 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 -50 0,8 3,1 t ( µs) V C (100%) = 600 V I C (100%) = 149 tf= 0,104 Copyright Vincotech 3,15 3,2 3,25 3,3 3,35 3,4 3,45 3,5 t (µs) V C (100%) = 600 V A I C (100%) = 149 A µs tr = 0,044 µs 12 22 Jan. 2016 / Revision 1 30-P2126PA150SC-L280F09Y datasheet Inverter Switching Definitions Figure 5. IGBT Figure 6. Turn-of f Swit ching Wavef orms & def init ion of t Eof f IGBT Turn-on Swit ching Wavef orms & def init ion of tEon 125 175 % % IC 1% Poff Pon 150 100 Eoff 125 Eon 75 100 50 75 50 25 VGE 90% 25 VCE 3% VGE 10% 0 tEoff -25 -0,06 0,04 0,14 0,24 0,34 0 0,44 0,54 0,64 0,74 -25 2,95 0,84 tEon 3,05 3,15 3,25 3,35 P off (100%) = 89,53 kW P on (100%) = 89,53 E off (100%) = 12,85 mJ E on (100%) = 18,80 mJ t Eoff = 0,69 µs t Eon = 0,61 µs Figure 7. 3,45 3,55 3,65 3,75 t ( µs) t (µs) kW FWD Turn-of f Swit ching Wavef orms & def init ion of t rr 150 % Id 100 trr 50 fitted Vd 0 IRRM 10% -50 IRRM 90% IRRM 100% -100 -150 3,15 3,23 3,31 3,39 3,47 3,55 3,63 3,71 3,79 3,87 t (µs) V d (100%) = 600 I d (100%) = 149 A I RRM (100%) = -168 A t rr = 0,465 µs Copyright Vincotech V 13 22 Jan. 2016 / Revision 1 30-P2126PA150SC-L280F09Y datasheet Inverter Switching Definitions Figure 8. FWD Figure 9. Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 125 150 % % Id Erec Qrr 100 100 tQrr 50 75 tErec 0 50 -50 25 -100 0 Prec -150 2,8 3,2 3,6 4 4,4 -25 4,8 2,8 t (µs) 3,2 3,6 4 4,8 t (µs) I d (100%) = 149 A P rec (100%) = 89,53 Q rr (100%) = 29,16 µC E rec (100%) = 10,81 mJ t Qrr = 1,00 µs t Erec = 1,00 µs Copyright Vincotech 4,4 14 kW 22 Jan. 2016 / Revision 1 30-P2126PA150SC-L280F09Y datasheet Ordering Code & Marking Version with thermal paste 17mm housing with Press-fit pins Ordering Code 30-P2126PA150SC-L280F09Y-/3/ NN-NNNNNNNNNNNNNN TTTTTTVV WWYY UL VIN LLLLL SSSS Text Datamatrix Name Date code UL & VIN Lot Serial NN-NNNNNNNNNNNNNN-TTTTTTVV WWYY UL VIN LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin table [mm] Pin X Y Function Pin X Y 1 0,9 0 S11 30 68,5 0 Function DC+3 2 0,9 3 G11 31 68,5 2,7 DC+3 3 3,9 0 DC-1 32 64,7 36 G16 4 3,9 2,7 DC-1 33 61,7 36 S16 5 3,9 5,4 DC-1 34 58,7 36 PH3 6 6,6 0 DC-1 35 56 36 PH3 7 15,2 0 DC+1 36 53,3 36 PH3 8 15,2 2,7 DC+1 37 50,6 36 PH3 9 17,9 0 DC+1 38 39,4 36 G14 10 17,9 3 DC+1 39 36,4 36 S14 11 12 13 26,2 26,2 29,2 0 2,7 0 S13 G13 40 41 33,4 30,7 36 36 PH2 PH2 DC-2 42 28 36 PH2 14 29,2 2,7 DC-2 43 25,3 36 PH2 15 29,2 5,4 DC-2 44 16 31,9 0 DC-2 45 14,1 11,1 36 36 G12 S12 17 32,2 4,05 NTC 46 8,1 36 PH1 18 40,5 0 DC+2 47 5,4 36 PH1 19 40,5 2,7 20 43,2 0 DC+2 DC+2 48 49 2,7 0 36 36 PH1 PH1 21 43,2 2,7 DC+2 22 51,5 0 S15 23 51,5 3 G15 24 54,5 0 DC-3 25 54,5 2,7 DC-3 26 54,5 5,4 DC-3 27 57,2 0 DC-3 28 65,8 0 29 65,8 2,7 DC+3 DC+3 Copyright Vincotech 15 22 Jan. 2016 / Revision 1 30-P2126PA150SC-L280F09Y datasheet Pinout Identification ID Component Voltage Current Function T11,T12,T13 T14,T15,T16 IGBT 1200 V 150 A Inverter Switch D11,D12,D13 D14,D15,D16 FWD 1200 V 150 A Inverter Diode NTC NTC Copyright Vincotech Comment Thermistor 16 22 Jan. 2016 / Revision 1 30-P2126PA150SC-L280F09Y datasheet Packaging instruction Standard packaging quantity (SPQ) 42 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 2 packages see vincotech.com website. Package data Package data for flow 2 packages see vincotech.com website. UL recognition and file number This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotec h.com website. Document No.: Date: 30-P2126PA150SC-L280F09Y-D1-14 22 Jan. 2016 Modification: Pages DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 17 22 Jan. 2016 / Revision 1