MB39C602-EVB-CN05

Evaluation board Manual
9W LED PWM Dimming Lighting
AC 110V
MB39C602-EVB-CN05
Rev 0.1
Mar. 2013
1. Summarize
The drive capability MB39C602-EVB-CN05 reach 9w(9 LED in series) .The dimming
function supports DC(0V-5V) input and PWM(0V-5V) input. Dimming range is 10%
to 100%. The EVB just supports 110VAC input.
2. EVB Electrical Performance Specifications
Ta = +25°C , fac=60Hz
PARAMETER
TEST
CONDITIONS
MIN
TYP
MAX
UNITS
Input Characteristics
Input Voltage Range
Maximum Input current
110VAC /60Hz
110
VAC
109
mA
Output Characteristics
Output Voltage
24
30
V
ILED
17
304
mA
Systems Characteristics
Switching Frequency
Efficiency
ILED=186mA
Power Factor
50
KHz
80
%
0.99
PCB Size
L*W*H
Dimming Mode
70*20*20
mm
(0V-5V)PWM or (0V-5V)DC
Protection Function
UVLO,OTP, OVP, SCP
3.Terminal Description
Pin Name
Description
L
AC line input
N
AC line input
LED+
LED output (+)
LED-
LED return point (-)
PWM
0V-5V PWM or DC signal input
GND
Signal GND
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4. Test Setup
(Note)
This evaluation board is a high voltage. Should be handled carefully.
During operation, do not touch the evaluation board.
(1) Recommended Test Setup
・Connect L and N to AC power.
・Please connect the measuring instrument and LED.
(LED: 9 series connected)
AC Power Supply
VAC:220Vrms
Power
Meter
+
Signal
generator
+
-
DMM
IOUT
+
DMM
VOUT
+
(2) How to check
• Make sure that the terminals are connected correctly, and then turn on the AC POWER.
• LED light , the EVB working properly.
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5. EVM Assembly Drawing and PCB layout
MB39C602-EVB-CN05
Top Layer Assembly Drawing (top view)
Bottom Assembly Drawing (bottom view)
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5. EVM Assembly Drawing and PCB layout
MB39C602-EVB-CN05
Top Copper (top view)
Bottom Copper (bottom view)
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6. Schematic
TP1
L
TP2
N
R10
110K/0805/1%
1
2
AC
+
-
BR1
MB6S
AC
R12
39K/0603/1%
4
3
R13
100K/0603/1%
CL
ZCD
FC
VCG
DRN
GND
VDD
R1
560K/0805/5%
R2
560K/0805/5%
R3
560K/0805/5%
8
7
6
5
R4
R5
C2
15nF/250V/1206
D1
STTH108A/SMA
Q1
SPA07N60C3
1
2
1
18V
C12
100uF/25V
D3
MMBD1404
R7
4.99/0603//5%
C10
100nF/0603
3
10 0K/12 06 /5 %
OTC
U1
MB39C602
R15
240K/0603/1%
C1
22nF/630VDC/CBB
C5
10nF/0603
1
2
3
4
R14
10K/0603/1%
C6
10nF/0603
1
3
4
5
T1
T
10
8
1
D2
HER206
TP5
TP6
GND
5V
C4
0.1uF/0805
5V
C13
1uF/0603
U3
SGM321
4
OUT
C11
100nF/0603
R16
10K/0603/5%
R9
12K/0805/5%
D4
5V/D1206
R17
3K/0603/5%
PWMor DC Input(0V-5V)
U2
PS2581AL2
R8
3.01/0805/5%
D6
18V/D1206
4
2
+
C14
330nF/0603
3
1
R19
R20
1M/0603/1%/NC
20K/0603/1%
C8
10nF/0603
R23
2K/0603/1%
D5
IN4007
R6
0.33/1206/1%
C9
10nF/0603
C3
470uF/50V/105C
R21
560K/0603/1%
R22
12K/0603/1%
LED-
LED+
TP4
LED-
TP3
LED+
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
5
10 0K/12 06 /5 %
R11
33K/0603/1%
C7
10nF/0603
3
R18
3K/0603/5%
5
2
2
3
7. BOM
COUNT
REFDES
DESCRIPTION
PART NUMBER
MFR
MB39C602
PS2581AL2
FUJITSU
NEC
SGM321
SGMICRO
MB6S
MIC
1
1
U1
U2
LED driver IC, SOP-8
Optical coupling
1
U3
Rail-to-rail op amp,SOT-235
1
BR1
4-pin SMD rectifier bridge,1000V/1A,SO-8
1
C1
2-pin DIP package CBB capacitor,22nF/630V
STD
STD
1
C2
15nF/200V/1206
STD
STD
1
C3
2-pin DIP package capacitorelectrolytic,
470uF/50V/105°C,Size:10mm*20mm
STD
STD
1
5
2
STD
STD
STD
STD
STD
STD
STD
STD
1
1
3
2
1
1
1
1
1
1
1
1
1
1
1
2
1
1
1
1
1
C4
0.1uF/50V/0805
C5,C6,C7,C8,C9 10nF/50V/0603
C10,C11
100nF/50V/0603
2-pin DIP package capacitorelectrolytic,
C12
100uF/25V/105°C,Size:6mm*8mm
C13
1uF/50V/0603
C14
330nF/50V/0603
R1,R2,R3
560K/5%/0805
R4,R5
100K/5%/1206
R6
0.33Ω/1%/1206
R7
4.99Ω/5%/0603
R8
3Ω/5%/0805
R9
12K/5%/0805
R10
110K/1%/0805
R11
33K/1%/0603
R12
39K/1%/0603
R13
100K/1%/0603
R14
10K/1%/0603
R15
240K/1%/0603
R16
10K/5%/0603
R17,R18
3K/5%/0603
R19
20K/1%/0603
R20
1M/1%/0603/NC
R21
560K/1%/0603
R22
12K/1%/0603
R23
2K/1%/0603
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
1
D1
2-pin SMD fast recovery rectifier,1000V/1A,SMA
STTH108A
ST
1
D2
2-pin SMD fast recovery rectifier,1000V/2A,DO-15
HER208
MIC
1
D3
Super fast recovery rectifier,175V/200mA,SOT-23
MMBD1404
Fairchild
1
1
1
1
D4
D5
D6
Q1
5.1V Zener diode,1206
1000V/1A,DO-41
18V Zener diode,1206
N-MOSFET,650 V, 7.3 A, 0.6 W, TO-220
1N5231B
IN4007
1N5246B
SPA07N60C3
DIODES
MIC
DIODES
Infineon
1
T1
Transformer,EF20/PC44,PIN5+5
EF20/PC44
BZD
1
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8. Transformer Specification
Transformer (110vac) Description
The core specifications: EF20/PC44 ; Operating frequency: 50KHz ;
Bobin size see below (horizontal 5 +5 Pin) .
1.Description :(Cut 2,6,7,9 Pin)
The primary winding (w1, w2, w3) using a sandwich winding, the
reference winding see below. W1, W3, W4 winding plus retaining wall.
Core reference gap 0.4mm (air gap opening in the column), to ensure
1pin to 3pin inductance measured at 50KHz conditions 650uH error of ±
10%.Bonded core, curing, dipping, drying, retest inductance value.
2. Electrical block diagram
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9. Property data
9-2 Dimming Range VS Po
9-1 Dimming Range VS ILED
VIN:110VAC/60Hz, Ta=25℃, 9 LED in series
VIN:110VAC/60Hz, Ta=25℃, 9 LED in series
0.35
Output Power(W)
0.3
ILED(A)
0.25
0.2
0.15
0.1
0.05
0
10
9
8
7
6
5
4
3
2
1
0
PWM Duty Cycle
PWM Duty Cycle
9-3 Line Regulation
9-4 Line Regulation
VIN:110VAC/60Hz, TA=25℃, 9 LED in series
0.04
0.3
0.035
0.25
0.03
0.2
ILED(A)
ILED(A)
VIN:110VAC/60Hz, TA=25℃, 9 LED in series
0.35
0.15
0.025
0.02
0.015
0.1
0.01
0.05
0.005
0
0
190
200 210 220 230 240
PWM Duty Cycle=100%
250
190
8
200
210 220 230 240
PWM Duty Cycle=0%
250
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VAC=110VRMS, 60Hz, Ta = +25°C, LED : 9 pcs in series
9-6 Turn-Off Waveform
9-5 Turn-On Waveform
Vin
Vin
Iac
Iac
VOUT
VOUT
ILED
PWM Duty Cycle: 0%
PWM Duty Cycle: 0%
ILED
9-8 Turn-Off Waveform
9-7 Turn-On Waveform
Vin
Vin
Iac
Iac
VOUT
VOUT
ILED
ILED
PWM Duty Cycle: 50%
PWM Duty Cycle: 50%
9-9 Turn-On Waveform
9-10 Turn-Off Waveform
Vin
Vin
Iac
Iac
VOUT
VOUT
ILED
ILED
PWM Duty Cycle: 100%
PWM Duty Cycle: 100%
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VAC=110VRMS, 60Hz, Ta = +25°C, LED : 9 pcs in series
9-11 Switching Waveform
VSW(Q1 drain)
VOUT
IOUT
PWM Duty Cycle: 0%
9-12 Switching Waveform
VSW(Q1 drain)
VOUT
IOUT
PWM Duty Cycle: 50%
9-13 Switching Waveform
VSW(Q1 drain)
VOUT
IOUT
PWM Duty Cycle: 100%
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10. Evaluation board picture
Top View
Bottom View
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12. Revision History
Name
Version
MB39C602-EVB-CN05
Rev 1.0
Remark
Specifications are subject to change without notice. For further information please contact each office.
All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with sales representatives before ordering.
The information, such as descriptions of function and application circuit examples, in this document are presented solely for
the purpose of reference to show examples of operations and uses of FUJITSU SEMICONDUCTOR device; FUJITSU
SEMICONDUCTOR does not warrant proper operation of the device with respect to use based on such information. When
you develop equipment incorporating the device based on such information, you must assume any responsibility arising out
of such use of the information.
FUJITSU SEMICONDUCTOR assumes no liability for any damages whatsoever arising out of the use of the information.
Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as
license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of
FUJITSU SEMICONDUCTOR or any third party or does FUJITSU SEMICONDUCTOR warrant non-infringement of any
third-party's intellectual property right or other right by using such information. FUJITSU SEMICONDUCTOR assumes no
liability for any infringement of the intellectual property rights or other rights of third parties which would result from the
use of information contained herein.
The products described in this document are designed, developed and manufactured as contemplated for general use,
including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not
designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless
extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury,
severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic
control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use
requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that FUJITSU SEMICONDUCTOR will not be liable against you and/or any third party for any claims or
damages arising in connection with above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such
failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and
prevention of over-current levels and other abnormal operating conditions.
Exportation/release of any products described in this document may require necessary procedures in accordance with the
regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.
The company names and brand names herein are the trademarks or registered trademarks of their respective owners.
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