Evaluation board Manual 9W LED PWM Dimming Lighting AC 110V MB39C602-EVB-CN05 Rev 0.1 Mar. 2013 1. Summarize The drive capability MB39C602-EVB-CN05 reach 9w(9 LED in series) .The dimming function supports DC(0V-5V) input and PWM(0V-5V) input. Dimming range is 10% to 100%. The EVB just supports 110VAC input. 2. EVB Electrical Performance Specifications Ta = +25°C , fac=60Hz PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Input Characteristics Input Voltage Range Maximum Input current 110VAC /60Hz 110 VAC 109 mA Output Characteristics Output Voltage 24 30 V ILED 17 304 mA Systems Characteristics Switching Frequency Efficiency ILED=186mA Power Factor 50 KHz 80 % 0.99 PCB Size L*W*H Dimming Mode 70*20*20 mm (0V-5V)PWM or (0V-5V)DC Protection Function UVLO,OTP, OVP, SCP 3.Terminal Description Pin Name Description L AC line input N AC line input LED+ LED output (+) LED- LED return point (-) PWM 0V-5V PWM or DC signal input GND Signal GND 1 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 4. Test Setup (Note) This evaluation board is a high voltage. Should be handled carefully. During operation, do not touch the evaluation board. (1) Recommended Test Setup ・Connect L and N to AC power. ・Please connect the measuring instrument and LED. (LED: 9 series connected) AC Power Supply VAC:220Vrms Power Meter + Signal generator + - DMM IOUT + DMM VOUT + (2) How to check • Make sure that the terminals are connected correctly, and then turn on the AC POWER. • LED light , the EVB working properly. 2 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 5. EVM Assembly Drawing and PCB layout MB39C602-EVB-CN05 Top Layer Assembly Drawing (top view) Bottom Assembly Drawing (bottom view) 3 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 5. EVM Assembly Drawing and PCB layout MB39C602-EVB-CN05 Top Copper (top view) Bottom Copper (bottom view) 4 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 6. Schematic TP1 L TP2 N R10 110K/0805/1% 1 2 AC + - BR1 MB6S AC R12 39K/0603/1% 4 3 R13 100K/0603/1% CL ZCD FC VCG DRN GND VDD R1 560K/0805/5% R2 560K/0805/5% R3 560K/0805/5% 8 7 6 5 R4 R5 C2 15nF/250V/1206 D1 STTH108A/SMA Q1 SPA07N60C3 1 2 1 18V C12 100uF/25V D3 MMBD1404 R7 4.99/0603//5% C10 100nF/0603 3 10 0K/12 06 /5 % OTC U1 MB39C602 R15 240K/0603/1% C1 22nF/630VDC/CBB C5 10nF/0603 1 2 3 4 R14 10K/0603/1% C6 10nF/0603 1 3 4 5 T1 T 10 8 1 D2 HER206 TP5 TP6 GND 5V C4 0.1uF/0805 5V C13 1uF/0603 U3 SGM321 4 OUT C11 100nF/0603 R16 10K/0603/5% R9 12K/0805/5% D4 5V/D1206 R17 3K/0603/5% PWMor DC Input(0V-5V) U2 PS2581AL2 R8 3.01/0805/5% D6 18V/D1206 4 2 + C14 330nF/0603 3 1 R19 R20 1M/0603/1%/NC 20K/0603/1% C8 10nF/0603 R23 2K/0603/1% D5 IN4007 R6 0.33/1206/1% C9 10nF/0603 C3 470uF/50V/105C R21 560K/0603/1% R22 12K/0603/1% LED- LED+ TP4 LED- TP3 LED+ Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 5 10 0K/12 06 /5 % R11 33K/0603/1% C7 10nF/0603 3 R18 3K/0603/5% 5 2 2 3 7. BOM COUNT REFDES DESCRIPTION PART NUMBER MFR MB39C602 PS2581AL2 FUJITSU NEC SGM321 SGMICRO MB6S MIC 1 1 U1 U2 LED driver IC, SOP-8 Optical coupling 1 U3 Rail-to-rail op amp，SOT-235 1 BR1 4-pin SMD rectifier bridge,1000V/1A,SO-8 1 C1 2-pin DIP package CBB capacitor,22nF/630V STD STD 1 C2 15nF/200V/1206 STD STD 1 C3 2-pin DIP package capacitorelectrolytic， 470uF/50V/105°C,Size:10mm*20mm STD STD 1 5 2 STD STD STD STD STD STD STD STD 1 1 3 2 1 1 1 1 1 1 1 1 1 1 1 2 1 1 1 1 1 C4 0.1uF/50V/0805 C5,C6,C7,C8,C9 10nF/50V/0603 C10,C11 100nF/50V/0603 2-pin DIP package capacitorelectrolytic， C12 100uF/25V/105°C,Size:6mm*8mm C13 1uF/50V/0603 C14 330nF/50V/0603 R1,R2,R3 560K/5%/0805 R4,R5 100K/5%/1206 R6 0.33Ω/1%/1206 R7 4.99Ω/5%/0603 R8 3Ω/5%/0805 R9 12K/5%/0805 R10 110K/1%/0805 R11 33K/1%/0603 R12 39K/1%/0603 R13 100K/1%/0603 R14 10K/1%/0603 R15 240K/1%/0603 R16 10K/5%/0603 R17,R18 3K/5%/0603 R19 20K/1%/0603 R20 1M/1%/0603/NC R21 560K/1%/0603 R22 12K/1%/0603 R23 2K/1%/0603 STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD STD 1 D1 2-pin SMD fast recovery rectifier,1000V/1A,SMA STTH108A ST 1 D2 2-pin SMD fast recovery rectifier,1000V/2A,DO-15 HER208 MIC 1 D3 Super fast recovery rectifier，175V/200mA,SOT-23 MMBD1404 Fairchild 1 1 1 1 D4 D5 D6 Q1 5.1V Zener diode,1206 1000V/1A,DO-41 18V Zener diode,1206 N-MOSFET,650 V, 7.3 A, 0.6 W, TO-220 1N5231B IN4007 1N5246B SPA07N60C3 DIODES MIC DIODES Infineon 1 T1 Transformer，EF20/PC44,PIN5+5 EF20/PC44 BZD 1 6 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 8. Transformer Specification Transformer (110vac) Description The core specifications: EF20/PC44 ; Operating frequency: 50KHz ; Bobin size see below (horizontal 5 +5 Pin) . 1.Description ：(Cut 2,6,7,9 Pin) The primary winding (w1, w2, w3) using a sandwich winding, the reference winding see below. W1, W3, W4 winding plus retaining wall. Core reference gap 0.4mm (air gap opening in the column), to ensure 1pin to 3pin inductance measured at 50KHz conditions 650uH error of ± 10%.Bonded core, curing, dipping, drying, retest inductance value. 2. Electrical block diagram 7 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 9. Property data 9-2 Dimming Range VS Po 9-1 Dimming Range VS ILED VIN:110VAC/60Hz, Ta=25℃, 9 LED in series VIN:110VAC/60Hz, Ta=25℃, 9 LED in series 0.35 Output Power(W) 0.3 ILED(A) 0.25 0.2 0.15 0.1 0.05 0 10 9 8 7 6 5 4 3 2 1 0 PWM Duty Cycle PWM Duty Cycle 9-3 Line Regulation 9-4 Line Regulation VIN:110VAC/60Hz, TA=25℃, 9 LED in series 0.04 0.3 0.035 0.25 0.03 0.2 ILED(A) ILED(A) VIN:110VAC/60Hz, TA=25℃, 9 LED in series 0.35 0.15 0.025 0.02 0.015 0.1 0.01 0.05 0.005 0 0 190 200 210 220 230 240 PWM Duty Cycle=100% 250 190 8 200 210 220 230 240 PWM Duty Cycle=0% 250 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED VAC=110VRMS, 60Hz, Ta = +25°C, LED : 9 pcs in series 9-6 Turn-Off Waveform 9-5 Turn-On Waveform Vin Vin Iac Iac VOUT VOUT ILED PWM Duty Cycle: 0% PWM Duty Cycle: 0% ILED 9-8 Turn-Off Waveform 9-7 Turn-On Waveform Vin Vin Iac Iac VOUT VOUT ILED ILED PWM Duty Cycle: 50% PWM Duty Cycle: 50% 9-9 Turn-On Waveform 9-10 Turn-Off Waveform Vin Vin Iac Iac VOUT VOUT ILED ILED PWM Duty Cycle: 100% PWM Duty Cycle: 100% 9 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED VAC=110VRMS, 60Hz, Ta = +25°C, LED : 9 pcs in series 9-11 Switching Waveform VSW(Q1 drain) VOUT IOUT PWM Duty Cycle: 0% 9-12 Switching Waveform VSW(Q1 drain) VOUT IOUT PWM Duty Cycle: 50% 9-13 Switching Waveform VSW(Q1 drain) VOUT IOUT PWM Duty Cycle: 100% 10 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 10. Evaluation board picture Top View Bottom View 11 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 12. Revision History Name Version MB39C602-EVB-CN05 Rev 1.0 Remark Specifications are subject to change without notice. For further information please contact each office. All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of FUJITSU SEMICONDUCTOR device; FUJITSU SEMICONDUCTOR does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. FUJITSU SEMICONDUCTOR assumes no liability for any damages whatsoever arising out of the use of the information. Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU SEMICONDUCTOR or any third party or does FUJITSU SEMICONDUCTOR warrant non-infringement of any third-party's intellectual property right or other right by using such information. FUJITSU SEMICONDUCTOR assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite). Please note that FUJITSU SEMICONDUCTOR will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws. The company names and brand names herein are the trademarks or registered trademarks of their respective owners. 12 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED