Evaluation board Manual 7W no-Isolation Blub AC220V MB39C602-EVB-CN02 Rev 1.0 Mar. 2013 1. Summarize The driver MB39C602-EVB-CN02 has the driving capability of 7 watts . It can be placed in some LED bulb, Down lamp and etc. 2. EVB Electrical Performance Specifications Ta = +25℃ , fac = 50Hz PARAMETER TEST CONDITIONS MIN TYP MAX UNITS 198 220 242 VAC Input Characteristics Input Voltage Range Maximum Input Current VIN=220Vac，50Hz,POUT=7W 20 mA 23 V POUT=7W 300 mA ILED=300mA, Co=330uF 20 mAPP 40 KHz VIN=220Vac，50H 87 % VIN=220Vac 0.52 L*W*H 60*20*17 Output Characteristics load:7s1p Output Voltage Output Current=307mA Output Current Output Current Ripple Systems Characteristics Switching frequency Efficiency Power Factor PCB Size Dimming Mode - Protection function No mm - OTP, OCP, 3.Terminal Description Pin Name Description L AC line input N AC line input LED+ LED output (+) LED- LED output (-) 1 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 4. Test Setup (Note) This evaluation board is a high voltage. Should be handled carefully. During operation, do not touch the evaluation board. (1) Recommended Test Setup ・Connect L and N to AC power. ・Please connect the measuring instrument and LED. (LED: 7LED series connected, VF = 3.3V, IF = 300mA) AC Power Supply VAC:220Vrms DMM VOUT + DMM IOUT + (2) How to check • Make sure that the terminals are connected correctly, and then turn on the AC POWER. • LED light ,and the same time VOUT = 23V, IOUT = 300mA .The EVB working properly. 2 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 5. PCB layout MB39C602-EVB-CN02 Top view(top side) Top view (bottom side) Board Layout (top side) Board Layout (bottom side) 3 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 6. Schematic 4 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 7. BOM List No 1 2 3 COMPON ENT U1 RZD D1 4 5 6 7 8 D3 D2 BR1 Q1 F1 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 DESCRIPTION LED driver ic, SOP-8 MOV Ultra fast 600V 2A,SMB Zener diode Glass 500mW, 18V, LL34 Diode Ultra fast 200mA 200V,SOT-23 Bridge rectifier,0.5A,600V,SO-4 N-mosfet,800V,3.8ohm,2.5A,IPAK Fuse ,axial glass Fast acting,250V 1A, 2-pin DIP safety capacitor, 275VAC/0.1uF， CX1,CX2 X2 Aluminum electrolytic capacitor, 63v 330uF, C1 105°, 10*18 Aluminum electrolytic capacitor,400v 4.7uF C7 105°, 7*13 Aluminum electrolytic capacitor,25V 100uF C2 105° 6*8 C5 Ceramic capacitor 50v 10pF, X7R, 0603 C3,C8,C9 Ceramic capacitor 50v 10nF, X7R, 0603 C4 Ceramic capacitor 50v 4.7uF, X7R, 1206 Coupling inductor,800uH, 0.5A T1 NA:NS=100T:72T L3,L4 Inductor,1mH, 50mA R1,R4,R5 Resistor, chip, 1MΩ, ±1%,1/8W, 0805 R7 Resistor, chip, 3Ω, ±1%,1/8W, 0805 R8,R2 Resistor, chip, 4.3KΩ, ±1%,1/10W, 0603 R6 Resistor, chip, 5.1Ω, ±5%,1/10W, 0603 R11 Resistor, chip, 33KΩ, ±1%,1/10W, 0603 R13 Resistor, chip, 56Ω, ±1%,1/10W, 0603 R9 Resistor, chip, 100KΩ, ±5%,1/4W, 1206 R3 Resistor, chip, 91KΩ, ±1%,1/10W, 0603 R12 Resistor, chip, 169KΩ, ±1%,1/10W, 0603 5 PART No. MB39C602 7D471 STTH2R06 MFR Fujitsu STD MMBD1404 MB6S D3NK8 STD STD Fairchild Fairchild ST STD STD STD STD Chong STD Chong STD GRM1885C1H100JA01D GRM188R71H103KA01D GRM31CF51H475ZA01L LSHK MuRata MuRata MuRata STD STD RC0805JR-071ML RC0805JR-073RL RC0603FR-074K3L RC0603JR-075R1L RC0603FR-0733KL RC0603FR-0756RL RC1206JR-07100KL RC0603FR-0791KL RC0603FR-07178KL BZD BZD YAGEO YAGEO YAGEO YAGEO YAGEO YAGEO YAGEO YAGEO YAGEO ST Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 8. Property data 8-2 Power Factor 8-1 Efficiency 0.8 1 0.6 0.9 Power Factor PF Conversion efficiency η 0.7 0.8 0.7 0.5 0.4 0.3 0.2 0.1 0.6 0 180 190 200 210 220 230 240 250 180 190 200 210 220 230 240 250 Input Voltage 50Hz Vac [Vrms] Input Voltage 50Hz Vac [Vrms] Load：7LEDs in series Load：7LEDs in series 8-4 Line regulation 400 330 380 320 360 Output Current ILED [mA] Output Current lLED [mA] 8-3 Load regulation 340 320 300 280 260 240 310 300 290 280 270 260 220 250 200 10 15 20 25 180 190 200 210 220 230 240 250 30 Input Voltage 50Hz Vac [Vrms] Output Voltage VLED [V] Load：4 — 9LEDs in series Load：7LEDs in series 6 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED VAC=220V, 50Hz. LED =7 pcs in series 8-6 Switching Waveform 8-5 Output Ripple IOUT IOUT VIN VSW(Q1 drain) 8-8 Turn-Off Waveform 8-7 Turn-On Waveform VBULK VBULK VDD VDD IOUT IOUT VOUT VOUT 8-10 LED Short Waveform 8-9 LED Open Waveform VSW(Q1 drain) IOUT VSW(Q1 drain) VDD VDD IOUT VOUT VOUT Do not Open too long Do not short too long 7 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 8-11 EMI Conduction Test EN55015-L EN55015-N 8 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 9. Evaluation board picture Top View Bottom View 9 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 10. Revision History Name Version MB39C602-EVB-CN02 Rev 1.0 Remark Specifications are subject to change without notice. For further information please contact each office. All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of FUJITSU SEMICONDUCTOR device; FUJITSU SEMICONDUCTOR does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. FUJITSU SEMICONDUCTOR assumes no liability for any damages whatsoever arising out of the use of the information. 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Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws. The company names and brand names herein are the trademarks or registered trademarks of their respective owners. 10 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED