Photomicrosensor (Transmissive) EE-SX1088 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • • • • 25±0.2 19±0.15 Two, R1 5±0.2 6±0.2 Four, C0.3 Two, 3.2±0.2 dia. holes ■ Absolute Maximum Ratings (Ta = 25°C) Two, C2 Item 0.5±0.1 0.5±0.1 6.5±0.1 (Optical axis) Emitter 10±0.2 7.2±0.2 8.4±0.1 2.5±0.1 3±0.4 General-purpose model with a 3.4-mm-wide slot. Mounts to PCBs or connects to connectors. High resolution with a 0.5-mm-wide aperture. OMRON’s XK8-series Connectors can be connected without soldering. Contact your OMRON representative for information on obtaining XK8-series Connectors. Four, 0.5 Four, 0.25 Detector Cross section BB Cross section AA Internal Circuit K C A Ambient temperature Unless otherwise specified, the tolerances are as shown below. E Dimensions 3 mm max. ±0.3 3 < mm ≤ 6 ±0.375 K C Cathode Collector 6 < mm ≤ 10 ±0.45 10 < mm ≤ 18 ±0.55 E Emitter 18 < mm ≤ 30 ±0.65 Rated value IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr –25°C to 85°C Storage Tstg –30°C to 100°C Tsol 260°C (see note 3) Soldering temperature Tolerance Terminal No. Name A Anode Symbol Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector–Emitter saturated voltage VCE (sat) 0.15 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength λP 850 nm typ. VCE = 10 V Rising time tr 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Falling time tf 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Detector 52 EE-SX1088 Photomicrosensor (Transmissive) ■ Engineering Data IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA Collector−Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Light current IL (mA) Ta = −30°C Ta = 25°C Ta = 70°C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Light current IL (mA) Ta = 25°C Ta = 25°C VCE = 10 V Forward voltage VF (V) Ambient temperature Ta (°C) Light Current vs. Collector−Emitter Voltage Characteristics (Typical) Light Current vs. Forward Current Characteristics (Typical) Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V VCE = 10 V 0 lx Dark current ID (nA) PC Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating Ambient temperature Ta (°C) Ambient temperature Ta (°C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) (Center of optical axis) Distance d (mm) IF = 20 mA VCE = 10 V Ta = 25°C 100 (Center of optical axis) IF = 20 mA VCE = 10 V Ta = 25°C Relative light current IL (%) Response time tr, tf (μs) Load resistance RL (kΩ) Relative light current IL (%) 120 VCC = 5 V Ta = 25°C 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1088 Photomicrosensor (Transmissive) 53