Datasheet

Photomicrosensor (Transmissive)
EE-SX1088
Be sure to read Precautions on page 25.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
•
•
•
•
25±0.2
19±0.15
Two, R1
5±0.2 6±0.2
Four, C0.3
Two, 3.2±0.2 dia. holes
■ Absolute Maximum Ratings (Ta = 25°C)
Two, C2
Item
0.5±0.1
0.5±0.1
6.5±0.1
(Optical axis)
Emitter
10±0.2
7.2±0.2
8.4±0.1
2.5±0.1
3±0.4
General-purpose model with a 3.4-mm-wide slot.
Mounts to PCBs or connects to connectors.
High resolution with a 0.5-mm-wide aperture.
OMRON’s XK8-series Connectors can be connected without soldering. Contact your OMRON representative for information on
obtaining XK8-series Connectors.
Four, 0.5
Four, 0.25
Detector
Cross section BB
Cross section AA
Internal Circuit
K
C
A
Ambient temperature
Unless otherwise specified, the
tolerances are as shown below.
E
Dimensions
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
K
C
Cathode
Collector
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
E
Emitter
18 < mm ≤ 30
±0.65
Rated value
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to
100°C
Tsol
260°C
(see note 3)
Soldering temperature
Tolerance
Terminal No.
Name
A
Anode
Symbol
Forward current
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
0.5 mA min., 14 mA max.
IF = 20 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.15 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Detector
52
EE-SX1088 Photomicrosensor (Transmissive)
■ Engineering Data
IF = 50 mA
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Collector−Emitter voltage VCE (V)
Response Time vs. Load Resistance Characteristics (Typical)
Light current IL (mA)
Ta = −30°C
Ta = 25°C
Ta = 70°C
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Relative light current IL (%)
Light current IL (mA)
Ta = 25°C
Ta = 25°C
VCE = 10 V
Forward voltage VF (V)
Ambient temperature Ta (°C)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Forward current IF (mA)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
VCE = 10 V
0 lx
Dark current ID (nA)
PC
Forward current IF (mA)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
(Center of
optical axis)
Distance d (mm)
IF = 20 mA
VCE = 10 V
Ta = 25°C
100
(Center of optical axis)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Relative light current IL (%)
Response time tr, tf (μs)
Load resistance RL (kΩ)
Relative light current IL (%)
120
VCC = 5 V
Ta = 25°C
80
d
60
40
20
0
−2.0
−1.5
−1.0
−0.5
0
0.5
1.0
1.5
2.0
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SX1088 Photomicrosensor (Transmissive)
53