Photomicrosensor (Transmissive) EE-SX1096 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • • • • • 25±0.2 19±0.15 Two, R1 5±0.2 6±0.2 Two, 3.2±0.2 dia. holes Four, C0.3 Two, C2 ■ Absolute Maximum Ratings (Ta = 25°C) 2.1±0.15 2.1±0.15 General-purpose model with a 3.4-mm-wide slot. Mounts to PCBs or connects to connectors. High resolution with a 0.5-mm-wide aperture. With a horizontal sensing slot. OMRON’s XK8-series Connectors can be connected without soldering. Contact your OMRON representative for information on obtaining XK8-series Connectors. Item 0.5±0.1 0.5±0.1 Emitter (Optical axis) 10±0.2 7.2±0.2 2.5±0.1 Four, 0.5 3±0.4 Four, 0.25 Detector Cross section AA Cross section BB Internal Circuit K C A Unless otherwise specified, the tolerances are as shown below. E Dimensions Tolerance 3 mm max. 3 < mm ≤ 6 ±0.375 6 < mm ≤ 10 ±0.45 10 < mm ≤ 18 ±0.55 E 18 < mm ≤ 30 ±0.65 Rated value IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr –25°C to 85°C Storage Tstg –30°C to 100°C Tsol 260°C (see note 3) Soldering temperature ±0.3 Terminal No. Name A Anode K Cathode C Collector Emitter Ambient temperature Symbol Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Detector Forward voltage Symbol Value VF 1.2 V typ., 1.5 V max. Condition IF = 30 mA Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength λP 850 nm typ. VCE = 10 V Rising time tr 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Falling time tf 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA 54 EE-SX1096 Photomicrosensor (Transmissive) ■ Engineering Data Light current IL (mA) Ta = −30°C Ta = 25°C Ta = 70°C Ambient temperature Ta (°C) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Light Current vs. Collector−Emitter Voltage Characteristics (Typical) IF = 20 mA IF = 10 mA Dark current ID (nA) IF = 30 mA Collector−Emitter voltage VCE (V) Response time tr, tf (μs) VCC = 5 V Ta = 25°C Ambient temperature Ta (°C) 120 80 d 60 40 20 −0.5 −0.25 0 0.25 0.5 Distance d (mm) 0.75 1.0 Sensing Position Characteristics (Typical) 120 IF = 20 mA VCE = 10 V Ta = 25°C 100 0 Load resistance RL (kΩ) Ambient temperature Ta (°C) Sensing Position Characteristics (Typical) Relative light current IL (%) Response Time vs. Load Resistance Characteristics (Typical) VCE = 10 V 0 lx Relative light current IL (%) IF = 40 mA Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V Relative light current IL (%) Light current IL (mA) Ta = 25°C IF = 50 mA Forward current IF (mA) Forward voltage VF (V) (Center of optical axis) PC Light Current vs. Forward Current Characteristics (Typical) Ta = 25°C VCE = 10 V Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating IF = 20 mA VCE = 10 V Ta = 25°C (Center of optical axis) 100 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1096 Photomicrosensor (Transmissive) 55