Photomicrosensor (Transmissive) EE-SV3 Series Be sure to read Precautions on page 25. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • High-resolution model with a 0.2-mm-wide or 0.5-mm-wide sensing aperture, high-sensitivity model with a 1-mm-wide sensing aperture, and model with a horizontal sensing aperture are available. • Solder terminal models: EE-SV3/-SV3-CS/-SV3-DS/-SV3-GS • PCB terminal models EE-SV3-B/-SV3-C/-SV3-D/-SV3-G Center mark ■ Absolute Maximum Ratings (Ta = 25°C) Four, R1 Four, 0.25 Four, R1 Two, 3.2±0.2 dia. holes Four, 1.5 2.54±0.2 Detector 2.54±0.2 Cross section AA Model K Four, 0.5 Two, 3.2±0.2 dia. holes Cross section AA EE-SV3(-B) EE-SV3-C(S) EE-SV3-D(S) EE-SV3-G(S) Internal Circuit Emitter Aperture (a x b) 2.1 x 0.5 2.1 x 1.0 2.1 x 0.2 0.5 x 2.1 Terminal No. Name A Anode K C E Cathode Collector Emitter Dimensions Tolerance 3 mm max. ±0.2 3 < mm ≤ 6 ±0.24 6 < mm ≤ 10 ±0.29 10 < mm ≤ 18 ±0.35 18 < mm ≤ 30 ±0.42 IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipa- PC tion 100 mW (see note 1) Topr –25°C to 85°C Storage Tstg –30°C to 100°C Soldering temperature Tsol 260°C (see note 3) Unless otherwise specified, the tolerances are as shown below. E Symbol Rated value Forward current Ambient tem- Operating perature C A Item Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value EE-SV3(-B) Emitter Detector EE-SV3-D(S) Condition EE-SV3-G(S) Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Light current IL 0.5 to 14 mA Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. Peak spectral sensitivity λP wavelength 1 to 28 mA 0.1 mA min. --- 0.5 to 14 mA 0.1 V typ., 0.4 V max. IF = 20 mA, VCE = 10 V IF = 20 mA, IL = 0.1 mA 850 nm typ. VCE = 10 V VCC = 5 V, RL = 100 Ω, IL = 5 mA Rising time tr 4 μs typ. Falling time tf 4 μs typ. 114 EE-SV3-C(S) EE-SV3 Series Photomicrosensor (Transmissive) ■ Engineering Data IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA Collector−Emitter voltage VCE (V) VCC = 5 V Ta = 25°C IF = 20 mA VCE = 10 V Ta = 25°C − d 0 + Center of optical axis Distance d (mm) Light current IL (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 10 V Ta = 25°C Center of optical axis Sensing Position Characteristics (EE-SV3-C(S)) IF = 20 mA VCE = 10 V Ta = 25°C VCE = 10 V 0 lx Ambient temperature Ta (°C) Sensing Position Characteristics (EE-SV3(-B)) Distance d (mm) Relative light current IL (%) Relative light current IL (%) Sensing Position Characteristics (EE-SV3-G(S)) IF = 20 mA VCE = 5 V Sensing Position Characteristics (EE-SV3-D(S)) Load resistance RL (kΩ) Ta = 25°C VCE = 10 V Forward current IF (mA) Ambient temperature Ta (°C) Relative light current IL (%) Response time tr, tf (μs) Response Time vs. Load Resistance Characteristics (Typical) Ta = 70°C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Light current IL (mA) Ta = 25°C Ta = 25°C Forward voltage VF (V) Ambient temperature Ta (°C) Light Current vs. Collector−Emitter Voltage Characteristics (EE-SV3(-B)) Ta = −30°C Dark current ID (nA) PC Light Current vs. Forward Current Characteristics (Typical) IF = 20 mA VCE = 10 V Ta = 25°C Relative light current IL (%) IF Forward Current vs. Forward Voltage Characteristics (Typical) Forward current IF (mA) Collector dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating Center of optical axis Distance d (mm) Response Time Measurement Circuit Input Center of optical axis Output 90 % 10 % Input Output Distance d (mm) EE-SV3 Series Photomicrosensor (Transmissive) 115