Photomicrosensor (Transmissive) EE-SX1106 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • Ultra-compact with a slot width of 3 mm. • PCB mounting type. • High resolution with a 0.4-mm-wide aperture. ■ Absolute Maximum Ratings (Ta = 25°C) Item Two, C0.7 Gate Emitter Optical axis 5.4 Detector 5 min. Two, R1 Four, 0.2 Two, C0.2 Four, 0.5 Internal Circuit Ambient temperature 0 dia 1−0.1 Symbol IF 50 mA (see note 1) Pulse forward current IFP --- Reverse voltage VR 5V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO 4.5 V Collector current IC 30 mA Collector dissipation PC 80 mW (see note 1) Operating Topr –25°C to 85°C Storage Tstg –30°C to 85°C Tsol 260°C (see note 2) Soldering temperature 0 1.4 −0.1 dia Rated value Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. Complete soldering within 3 seconds. Terminal No. Name A Anode K C E Cathode Collector Emitter Unless otherwise specified, the tolerances are ±0.2 mm. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Forward voltage Symbol Value VF 1.3 V typ., 1.6 V max. Condition IF = 50 mA Reverse current IR 10 μA max. VR = 5 V Peak emission wavelength λP 950 nm typ. IF = 50 mA Light current IL 0.2 mA min. IF = 20 mA, VCE = 5 V Dark current ID 500 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector–Emitter saturated voltage VCE (sat) 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength λP 800 nm typ. VCE = 5 V Rising time tr 10 μs typ. VCC = 5 V, RL = 100 Ω, IF = 20 mA Falling time tf 10 μs typ. VCC = 5 V, RL = 100 Ω, IF = 20 mA Detector 60 EE-SX1106 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Forward Voltage Characteristics (Typical) Ambient temperature Ta (°C) IF = 15 mA IF = 10 mA IF = 5 mA Collector−Emitter voltage VCE (V) Response time tr, tf (μs) VCE = 5 V Ta = 25°C RL = 1K Ω RL = 500 Ω RL = 100 Ω Light current It (mA) Light current IL (mA) VCE = 10 V Ambient temperature Ta (°C) Ambient temperature Ta (°C) Sensing Position Characteristics (Typical) Relative light current IL (%) Response Time vs. Light Current Characteristics (Typical) VCE = 30 V VCE =20 V IF = 20 mA VCE = 5 V Ta = 25°C Distance d (mm) Sensing Position Characteristics (Typical) Relative light current IL (%) IF = 20 mA IF = 20 mA VCE = 5 V Dark Current vs. Ambient Temperature Characteristics (Typical) Dark current ID (nA) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Light current IL (mA) IF = 25 mA Forward current IF (mA) Forward voltage VF (V) Light Current vs. Collector−Emitter Voltage Characteristics (Typical) Ta = 25°C Light Current vs. Forward Current Characteristics (Typical) Ta = 25°C VCE = 5 V Forward current IF (mA) Forward current IF (mA) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating IF = 20 mA VCE = 5 V Ta = 25°C Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1106 Photomicrosensor (Transmissive) 61