Photomicrosensor (Transmissive) EE-SX198 ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • General-purpose model with a 3-mm-wide slot. • PCB mounting type. • High resolution with a 0.5-mm-wide aperture. 12.2±0.3 ■ Absolute Maximum Ratings (Ta = 25°C) 5±0.1 Item Four, C0.3 0.5±0.1 Emitter Optical axis 10±0.2 8.5±0.1 Two, C1±0.3 6.5+0.1 Detector 6.2±0.5 Four, 0.5±0.1 Four, 0.25±0.1 2.5±0.1 Cross section BB 9.2±0.3 Cross section AA Ambient temperature Internal Circuit K Symbol IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr –25°C to 85°C Storage Tstg –30°C to 100°C Tsol 260°C (see note 3) C Soldering temperature A E Terminal No. A K C E Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 m s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Name Anode Cathode Collector Emitter Rated value Forward current Unless otherwise specified, the tolerances are ±0.2 mm. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Symbol Value Condition VF 1.2 V typ., 1.4 V max. Reverse current IR 0.01 m A typ., 10 m A max. VR = 4 V Peak emission wavelength lP 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 5 V Dark current ID 2 nA typ., 200 nA max. VCE = 20 V, 0 lx Leakage current ILEAK --- --- Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 40 mA, IL = 0.5 mA Peak spectral sensitivity wavelength lP 850 nm typ. VCE = 10 V Rising time tr 4 m s typ. VCC = 5 V, RL = 100 W, IL = 5 mA Falling time tf 4 m s typ. VCC = 5 V, RL = 100 W, IL = 5 mA Detector 128 Forward voltage EE-SX198 Photomicrosensor (Transmissive) IF = 30 mA ■ Engineering Data IF = 30 mA IF = 20 mA IF = 10 mA Relative light current IL (%) Light current IL (mA) IF = 40 mA Collector-Emitter voltage VCE (V) Response time tr, tf (µs) VCC = 5 V Ta = 25°C Load resistance RL (kΩ) Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V VCE = 10 V 0 lx Ambient temperature Ta (°C) Sensing Position Characteristics (Typical) Relative light current IL (%) Response Time vs. Load Resistance Characteristics (Typical) Ta = 70°C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) IF = 50 mA Ta = −30°C Ta = 25°C Forward voltage VF (V) Ambient temperature Ta (°C) Ta = 25°C Ta = 25°C VCE = 10 V Light current IL (mA) PC Light Current vs. Forward Current Characteristics (Typical) Dark current ID (nA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating IF = 20 mA VCE = 10 V Ta = 25°C (Center of optical axis) Ambient temperature Ta (°C) Response Time Measurement Circuit Input Output 90 % 10 % Input Output Distance d (mm) EE-SX198 Photomicrosensor (Transmissive) 129