Photomicrosensor (Transmissive) EE-SX1046 Be sure to read Precautions on page 24. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • With a horizontal sensing aperture. • PCB mounting type. • High resolution with a 0.5-mm-wide aperture. ■ Absolute Maximum Ratings (Ta = 25°C) 6.5 Optical axis 5 2.5 Item Emitter Symbol IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr –25°C to 85°C Storage Tstg –30°C to 100°C Tsol 260°C (see note 3) 10±0.3 0.5±0.1 0.5±0.1 Optical axis Optical axis Detector Four, 0.25 9 min. 0.3 max. Four, 0.25 Cross section BB 0.25 max. Cross section AA Ambient temperature Internal Circuit K C A E Dimensions 3 mm max. Terminal No. Name A Anode K C E Cathode Collector Emitter Soldering temperature Unless otherwise specified, the tolerances are as shown below. Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance ±0.3 3 < mm ≤ 6 ±0.375 6 < mm ≤ 10 ±0.45 10 < mm ≤ 18 ±0.55 18 < mm ≤ 30 ±0.65 Rated value Forward current ■ Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 920 nm typ. IF = 20 mA Light current IL 1.2 mA min., 14 mA max. IF = 20 mA, VCE = 5 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength λP 850 nm typ. VCE = 10 V Rising time tr 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Falling time tf 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Detector 76 EE-SX1046 Photomicrosensor (Transmissive) ■ Engineering Data Ta = −30°C Ta = 25°C Ta = 70°C Ambient temperature Ta (°C) IF = 30 mA IF = 20 mA IF = 10 mA VCE = 10 V 0 lx IF = 20 mA VCE = 5 V Ambient temperature Ta (°C) Collector−Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Dark Current vs. Ambient Temperature Characteristics (Typical) Dark current ID (nA) IF = 40 mA Relative light current IL (%) Light current IL (mA) IF = 50 mA Forward current IF (mA) Forward voltage VF (V) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Light Current vs. Collector−Emitter Voltage Characteristics (Typical) Ta = 25°C Light current IL (mA) PC Light Current vs. Forward Current Characteristics (Typical) Ta = 25°C VCE = 5 V Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating Ambient temperature Ta (°C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) 120 80 d 60 40 20 −0.5 −0.25 0 0.25 Distance d (mm) 0.5 0.75 Relative light current IL (%) 100 0 −0.75 Load resistance RL (kΩ) IF = 20 mA VCE = 5 V Ta = 25°C (Center of optical axis) Response time tr, tf (μs) Relative light current IL (%) 120 VCC = 5 V Ta = 25°C IF = 20 mA VCE = 10 V Ta = 25°C 100 (Center of optical axis) 80 d 60 40 20 0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1046 Photomicrosensor (Transmissive) 77