Photomicrosensor (Transmissive) EE-SX1161-W11 Be sure to read Precautions on page 24. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • Dust-proof model. • Pre-wired Sensors (AWG28). • Solder-less lead wire connection to increase reliability. 9.4±0.2 Optical axis ■ Absolute Maximum Ratings (Ta = 25C) 23.7±0.2 Item 5±0.2 Emitter Four, C0.4 2±0.15 Emitter 12.95±0.25 3.2±0.15 Sensing 0.2 window 1.1±0.1 2.1 Detector 14.2±0.15 1.1±0.1 4.55 B A Optical 1.4±0.2 axis Four, R1.6 Four, R1 Detector 2.1 6.35±0.25 9.7±0.2 12.5±0.2 10.85±0.1 4.5 10.85±0.1 3.2±0.25 3.1 Two, 2.65 610MIN. E 4 C B K A A Ambient temperature Cross section A-A Cross section B-B 3.55 11.4±0.2 E K C Terminal Color Name No. A Red Anode K C Black Cathode White Collector E Green Emitter Unless otherwise specified, the tolerances are as shown below. Dimensions Rated value IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO 5V Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr –25C to 80C Storage Tstg –25C to 85C Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. If you mount the Sensor with screws, use M3 screws, and flat washers and use a tightening torque of 0.5 N·m max. Internal Circuit A Symbol Forward current Tolerance 3 mm max. ±0.3 3 < mm ≤ 6 ±0.375 6 < mm ≤ 10 ±0.45 10 < mm ≤ 18 ±0.55 18 < mm ≤ 30 ±0.65 ■ Electrical and Optical Characteristics (Ta = 25C) Item Emitter Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 0.625 mA min. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector–Emitter saturated voltage VCE (sat) 0.15 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Detector 138 EE-SX1161-W11 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Dissipation Temperature Rating 22 100 30 50 20 10 0 -40 -20 0 20 40 60 Ta = 25°C Ta = 70°C IF = 40 mA 14 IF = 30 mA 10 IF = 20 mA 8 6 IF = 10 mA 4 8 6 0 10 20 30 40 50 Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V VCE = 10 V 0 lx Dark current ID (nA) IF = 50 mA 12 10 Forward current IF (mA) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Ta = 25°C 22 16 12 0 26 20 14 Forward voltage VF (V) Voltage Characteristics (Typical) 18 16 2 Ambient temperature Ta (°C) 24 18 4 0 100 80 Ta = 25°C VCE = 10 V 20 Light current IL (mA) PC 40 Forward current IF (mA) 50 Collector dissipation PC (mW) IF Light current IL (mA) Light Current vs. Forward Current Characteristics (Typical) 150 60 Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) 2 1 2 3 4 5 6 7 8 9 10 Ambient temperature Ta (°C) Response Time vs. Load Resistance Characteristics (Typical) Ambient temperature Ta (°C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) 120 IF = 20 mA VCE = 10 V Ta = 25°C 100 (Center of optical axis) 80 d 60 40 20 0 -2.5 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 Distance d (mm) 1.5 2.0 IF = 20 mA VCE = 10 V Ta = 25°C 100 Relative light current IL (%) Relative light current IL (%) 120 VCC = 5 V Ta = 25°C 2.5 (Center of optical axis) 0 0 80 d 60 40 20 0 -2.5 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 2.5 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1161-W11 Photomicrosensor (Transmissive) 139