VS-22RIA Series www.vishay.com Vishay Semiconductors Medium Power Phase Control Thyristors (Stud Version), 22 A FEATURES • Improved glass passivation for high reliability and exceptional stability at high temperature • High dI/dt and dV/dt capabilities • Standard package • Low thermal resistance • Metric threads version available TO-208AA (TO-48) • Types up to 1200 V VDRM/VRRM • Designed and qualified for industrial and consumer level PRODUCT SUMMARY Package TO-208AA (TO-48) Diode variation Single SCR • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS IT(AV) 22 A VDRM/VRRM 100 V to 1200 V VTM 1.70 V • Phase control applications IGT 60 mA TJ -65 °C to +125 °C • Medium power switching MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) I2t 22 A 85 °C 35 A 50 Hz 400 60 Hz 420 50 Hz 793 60 Hz 724 VDRM/VRRM 100 to 1200 tq UNITS TC IT(RMS) ITSM VALUES Typical TJ A A2s V 110 μs -65 to +125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-22RIA VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE (1) V VRSM, MAXIMUM NON-REPETITIVE IDRM/IRRM MAXIMUM PEAK VOLTAGE (2) AT TJ = TJ MAXIMUM mA V 10 100 150 20 200 300 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300 20 10 Notes (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs (2) For voltage pulses with t 5 ms p Revision: 19-Nov-15 Document Number: 93700 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-22RIA Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at case temperature Maximum RMS on-state current IT(AV) TEST CONDITIONS 180° sinusoidal conduction IT(RMS) t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t VALUES UNITS 22 A 85 °C 35 A No voltage reapplied 400 100 % VRRM reapplied 335 No voltage reapplied 420 Sinusoidal half wave, initial TJ =TJ maximum 100 % VRRM reapplied A 355 793 724 560 A2s 515 t = 0.1 to 10 ms, no voltage reapplied, TJ = TJ maximum 7930 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.83 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.95 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 14.9 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 13.4 Ipk = 70 A, TJ = 25 °C 1.70 A2s V m Maximum on-state voltage VTM Maximum holding current IH Latching current IL TJ = 25 °C, anode supply 6 V, resistive load 130 200 V mA SWITCHING PARAMETER SYMBOL TEST CONDITIONS VDRM 600 V Maximum rate of rise of turned-on current VDRM 800 V VDRM 1000 V Typical reverse recovery time Typical turn-off time UNITS 200 dI/dt TJ = TJ maximum, VDM = Rated VDRM Gate pulse = 20 V, 15 , tp = 6 μs, tr = 0.1 μs maximum ITM = (2 x rated dI/dt) A VDRM 1600 V Typical turn-on time VALUES 180 160 A/μs 150 tgt TJ = 25 °C, at rated VDRM/VRRM, TJ = 125 °C 0.9 trr TJ = TJ maximum, ITM = IT(AV), tp > 200 μs, dI/dt = - 10 A/μs 4 tq TJ = TJ maximum, ITM = IT(AV), tp > 200 μs, VR = 100 V, dI/dt = - 10 A/μs, dV/dt = 20 V/μs linear to 67 % VDRM, gate bias 0 V to 100 W μs 110 Note • tq = 10 μs up to 600 V, tq = 30 μs up to 1600 V available on special request BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage SYMBOL dV/dt TEST CONDITIONS VALUES TJ = TJ maximum linear to 100 % rated VDRM 100 TJ = TJ maximum linear to 67 % rated VDRM 300 (1) UNITS V/μs Note (1) Available with: dV/dt = 1000 V/μs, to complete code add S90 i.e. 22RIA120S90 Revision: 19-Nov-15 Document Number: 93700 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-22RIA Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) TEST CONDITIONS VALUES 8.0 TJ = TJ maximum 2.0 UNITS W Maximum peak positive gate current IGM TJ = TJ maximum 1.5 A Maximum peak negative gate voltage -VGM TJ = TJ maximum 10 V TJ = - 65 °C 90 DC gate current required to trigger IGT TJ = 25 °C TJ = 125 °C TJ = - 65 °C DC gate voltage required to trigger VGT TJ = 25 °C 60 Maximum required gate trigger current/voltage are the lowest value which will trigger all units 6 V anode to cathode applied 3.0 2.0 TJ = 125 °C DC gate current not to trigger IGD DC gate voltage not to trigger VGD V 1.0 TJ = TJ maximum, VDRM = Rated value TJ = TJ maximum, VDRM = Rated value mA 35 Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied 2.0 mA 0.2 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS -65 to +125 °C Maximum operating junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC DC operation 0.86 Maximum thermal resistance, case to heat sink RthCS Mounting surface, smooth, flat and greased 0.35 K/W Lubricated threads (Non-lubricated threads) Mounting torque Approximate weight Case style See dimensions - link at the end of datasheet TO NUT TO DEVICE 20 (27.5) 25 lbf in 0.23 (0.32) 0.29 kgf · m 2.3 (3.1) 2.8 N·m 14 g 0.49 oz. TO-208AA (TO-48) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.21 0.15 120° 0.25 0.25 90° 0.31 0.34 60° 0.45 0.47 30° 0.76 0.76 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 19-Nov-15 Document Number: 93700 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-22RIA Series Vishay Semiconductors 130 22RIA Series R thJC (DC) = 0.86 K/W 120 110 Conduction Angle 100 30° 60° 90° 120° 90 180° 80 0 5 10 15 130 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) www.vishay.com 20 22RIA Series RthJC (DC) = 0.86 K/W 120 110 Conduction Period 100 30° 60° 90° 120° 180° 90 DC 80 25 0 10 20 30 40 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 1 - Current Ratings Characteristics 40 /W 1K 3K /W RMS Limit aR elt -D 25 K/ W = 30 2 A hS 180° 120° 90° 60° 30° 35 Rt Maximum Average On-state Power Loss (W) Average On-state Current (A) 4K /W 5K /W 20 15 Conduction Angle 10 7K /W 10 K /W 22RIA Series TJ = 125°C 5 0 0 5 10 15 20 Average On-state Current (A) 25 0 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) 50 DC 180° 120° 90° 60° 30° 45 K/ W 1 W K/ a elt -D 30 2 = 35 A hS 40 Rt 3K /W 4K /W 25 RMS Limit 20 5K /W 7K /W Conduction Period 15 22RIA Series TJ = 125°C 10 5 R Maximum Average On-state Power Loss (W) Fig. 2 - On-State Power Loss Characteristics 10 K/W 0 0 5 10 15 20 25 Average On-state Current (A) 30 0 35 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 3 - On-State Power Loss Characteristics Revision: 19-Nov-15 Document Number: 93700 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-22RIA Series www.vishay.com 400 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 350 325 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 375 Vishay Semiconductors 300 275 250 225 200 22RIA Series 175 150 1 10 100 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied Rated VRRMReapplied 375 350 325 300 275 250 225 200 175 22RIA Series 150 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 4 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 100 TJ= 25°C 10 TJ = 125°C 22RIA Series 1 0.5 1 1.5 2 2.5 3 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJC (K/W) Fig. 6 - Forward Voltage Drop Characteristics 1 Steady State Value R thJC = 0.86 K/W (DC Operation) 0.1 22RIA Series 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 7 - Thermal Impedance ZthJC Characteristics Revision: 19-Nov-15 Document Number: 93700 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-22RIA Series www.vishay.com Vishay Semiconductors Rectangular gate pulse a) Recommended load line for rated di/dt : 10V, 20ohms tr <=0.5 µs, tp >= 6 µs b) Recommended load line for <=30% rated di/dt : 10V, 65ohms 10 tr<=1 µs, tp >= 6 µs (1) PGM = 16W, (2) PGM = 30W, (3) PGM = 60W, (4) PGM = 60W, tp = 4ms tp = 2ms tp = 1ms tp = 1ms (a) (b) 1 VGD Tj = -65 °C Tj = 125 °C Tj = 25 °C Instantaneous Gate Voltage (V) 100 (1) IGD (2) (3) (4) 22RIA Series Frequency Limited by PG(AV) 0.1 0.001 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 8 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- 22 RIA 120 M S90 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current code 3 - Essential part number 4 - Voltage code x 10 = VRRM (see Voltage Ratings table) 5 - None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A M = Stud base TO-208AA (TO-48) M6 x 1 6 - Critical dV/dt: None = 300 V/µs (standard value) S90 = 1000 V/µs (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95333 Revision: 19-Nov-15 Document Number: 93700 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-208AA (TO-48) DIMENSIONS in millimeters (inches) Ø 1.7/1.8 (Ø 0.06/0.07) Ø 3.9/4.1 (Ø 0.15/0.16) 30.2 MAX. (0.18 MAX.) 22.2 MAX. (0.87 MAX.) 12.8 MAX. (0.5 MAX.) 10.7/11.5 (0.42/0.45) 1/4"-28UNF-2A For metric device M6 x 1 Ø 15.5 (Ø 0.61) (0 3.1 .1 /3 2/ .3 0. 1. 13 (0 24 ) .0 /1 4/ .4 0. 4 05 ) 13.8/14.3 (0.54/0.56) Across flats 45° Document Number: 95333 Revision: 07-Jul-08 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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