T..RIA Series Vishay High Power Products Medium Power Phase Control Thyristors (Power Modules), 50 A/70 A/90 A FEATURES • • • • • • • • • D-55 Electrically isolated base plate Types up to 1200 VRRM 3500 VRMS isolating voltage Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL E78996 approved RoHS compliant Designed and qualified for industrial level RoHS COMPLIANT DESCRIPTION These series of T-modules are intended for general purpose applications such as battery chargers, welders and plating equipment, regulated power supplies and temperature and speed control circuits. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. PRODUCT SUMMARY IT(AV) 50 A/70 A/90 A MAJOR RATINGS AND CHARACTERISTICS SYMBOL IT(AV) CHARACTERISTICS T50RIA T70RIA T90RIA UNITS 70 °C 50 70 90 A 80 110 141 A 50 Hz 1310 1660 1780 60 Hz 1370 1740 1870 50 Hz 8550 13 860 15 900 60 Hz 7800 12 650 14 500 85 500 138 500 159 100 IT(RMS) ITSM I2 t I2√t VRRM Range TJ A A2s A2√s 100 to 1200 V - 40 to 125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER T50RIA T70RIA T90RIA VOLTAGE CODE VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE AND PEAK OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 10 100 150 20 200 300 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300 Document Number: 93756 Revision: 03-Jun-08 For technical questions, contact: [email protected] IRRM/IDRM MAXIMUM AT TJ = 25 °C µA 100 www.vishay.com 1 T..RIA Series Vishay High Power Products Medium Power Phase Control Thyristors (Power Modules), 50 A/70 A/90 A ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current at case temperature Maximum RMS on-state current IT(AV) TEST CONDITIONS IT(RMS) t = 8.3 ms ITSM t = 10 ms I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I2√t 70 90 A 70 70 70 °C 80 110 141 A No voltage reapplied 1310 1660 1780 1370 1740 1870 1100 1400 1500 1150 1460 1570 8550 13 860 15 900 7800 12 650 14 500 6050 9800 11 250 5520 8950 10 270 A t = 10 ms t = 8.3 ms Maximum I2t for fusing 50 180° conduction, half sine wave t = 10 ms Maximum peak, one-cycle on-state, non-repetitive surge current T50RIA T70RIA T90RIA UNITS 100 % VRRM reapplied No voltage reapplied Sine half wave, initial TJ = TJ maximum 100 % VRRM reapplied t = 0.1 to 10 ms, no voltage reapplied 85 500 138 500 159 100 Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum 0.97 0.77 0.78 High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ maximum 1.13 0.88 0.88 A2 s A2√s V Low level value of on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum 4.1 3.6 2.9 High level value of on-state slope resistance rt2 (I > π x IT(AV)), TJ maximum 3.3 3.2 2.6 mΩ Maximum on-state voltage drop VTM ITM = π x IT(AV), TJ = 25 °C, tp = 400 µs square Average power = VT(TO) x IT(AV) + rf x (IT(RMS))2 1.60 1.55 1.55 V Maximum forward voltage drop VFM ITM = π x IT(AV), TJ = 25 °C, tp = 400 µs square Average power = VT(TO) x IT(AV) + rf x (IT(RMS))2 1.60 1.55 1.55 V Maximum holding current IH Anode supply = 6 V, initial IT = 30 A, TJ = 25 °C 200 200 200 Maximum latching current IL Anode supply = 6 V, resistive load = 10 Ω Gate pulse: 10 V, 100 µs, TJ = 25 °C 400 400 400 mA SWITCHING PARAMETER SYMBOL TEST CONDITIONS Typical turn-on time tgd TJ = 25 °C, Vd = 50 % VDRM, ITM = 50 A Ig = 500 mA, tr ≤ 0.5, tp ≥ 6 µs Typical reverse recovery time trr TJ = 125 °C, ITM = 50 A, tp = 300 µs, dI/dt = 10 A/µs tq TJ = TJ maximum, ITM = 50 A, tp = 300 µs -dI/dt = 15 A/µs, VR = 100 V, linear to 80 % VDRM Typical turn-off time www.vishay.com 2 For technical questions, contact: [email protected] VALUES UNITS 0.9 3 µs 110 Document Number: 93756 Revision: 03-Jun-08 T..RIA Series Medium Power Phase Control Thyristors Vishay High Power Products (Power Modules), 50 A/70 A/90 A BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 15 mA Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum RMS isolation voltage VISOL 50 Hz, circuit to base, all terminals shorted, TJ = 25 °C, t = 1 s 3500 V Critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % rated VDRM (1) 500 V/µs Note (1) Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. T90RIA80S90 TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage Maximum required DC gate voltage to trigger SYMBOL TEST CONDITIONS PGM TJ = TJ maximum, tp ≤ 5 ms 10 12 12 PG(AV) TJ = TJ maximum, f = 50 Hz 2.5 3 3 2.5 3 3 A 10 10 10 V TJ = - 40 °C 4.0 4.0 4.0 TJ = 25 °C 2.5 2.5 2.5 1.5 1.5 1.5 250 270 270 TJ = 25 °C 100 120 120 TJ = TJ maximum 50 60 60 0.2 0.2 0.2 V 5.0 6.0 6.0 mA 200 200 200 180 180 180 160 160 160 150 150 150 W IGM -VGT VGT TJ = TJ maximum, tp ≤ 5 ms TJ = TJ maximum TJ = - 40 °C Maximum required DC gate current to trigger IGT Maximum gate voltage that will not trigger VGD Maximum gate current that will not trigger IGD Maximum rate of rise of turned-on current Document Number: 93756 Revision: 03-Jun-08 T50RIA T70RIA T90RIA UNITS Anode supply = 6 V, resistive load; Ra = 1 Ω V mA TJ = TJ maximum, rated VDRM applied dI/dt VD = 0.67 rated VDRM, ITM = 2 x rated dI/dt Ig = 400 mA for T50RIA and Ig = 500 mA for T70RIA/T90RIA; tr < 0.5 µs, tp ≥ 6 µs For repetitive value use 40 % non-repetitive Per JEDEC STD. RS397, 5.2.2.6 For technical questions, contact: [email protected] A/µs www.vishay.com 3 T..RIA Series Vishay High Power Products Medium Power Phase Control Thyristors (Power Modules), 50 A/70 A/90 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range TEST CONDITIONS T50RIA T70RIA T90RIA UNITS - 40 to 125 TJ °C Maximum storage temperature range TStg Maximum thermal resistance, junction to case per junction RthJC DC operation Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased - 40 to 150 0.65 0.50 0.38 K/W to heatsink Non-lubricated threads Mounting torque, ± 10 % terminals 0.2 M3.5 mounting screws (1) 1.3 ± 10 % Nm M5 screw terminals 3 ± 10 % Approximate weight 54 Case style T-module g D-55 Note (1) A mounting compund is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound ΔR CONDUCTION PER JUNCTION SINUSOIDAL CONDUCTION AT TJ MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° T50RIA 0.08 0.10 0.13 0.19 0.31 0.06 0.10 0.14 0.20 0.32 T70RIA 0.07 0.08 0.10 0.14 0.24 0.05 0.08 0.11 0.15 0.24 T90RIA 0.05 0.06 0.08 0.12 0.20 0.04 0.06 0.09 0.12 0.20 DEVICES UNITS K/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 93756 Revision: 03-Jun-08 T..RIA Series 130 T50RIA.. Series R thJC (DC) = 0.65 K/W 120 110 100 Conduction Angle 90 80 30° 70 60° 90° 120° 60 180° 50 0 10 20 30 40 130 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Medium Power Phase Control Thyristors Vishay High Power Products (Power Modules), 50 A/70 A/90 A 50 T50RIA.. Series R thJC (DC) = 0.65 K/W 120 110 100 Conduction Period 90 80 70 60° 60 90° 120° 30° 180° DC 50 60 0 10 20 30 40 50 60 70 80 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 80 K/ W K/W .1 =0 1 SA 60 0. 7 R th 180° 120° 90° 60° 30° 70 K/W 0.3 K/W 0.5 K/ W 1.5 K/W 50 R RMS Limit a elt -D Maximum Average On-state Power Loss (W) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 2K /W 40 3K /W 30 Conduction Angle 20 T50RIA.. Series TJ= 125°C 10 5 K/W 10 K/W 0 0 10 20 30 0 50 40 Average On-state Current (A) 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) 110 R 60 ta el -D 70 W K/ .1 =0 80 0. 5 K/ W 0.7 K/ W 1K /W SA 90 R th DC 180° 120° 90° 60° 30° 100 /W 3K 0. Maximum Average On-state Power Loss (W) Fig. 3 - On-State Power Loss Characteristics 1.5 K/W 2K /W 50 RMS Limit 40 Conduction Period 30 20 T50RIA.. Series TJ = 125°C 10 3 K/ W 5 K/W 0 0 10 20 30 40 50 60 Average On-state Current (A) 70 80 0 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-State Power Loss Characteristics Document Number: 93756 Revision: 03-Jun-08 For technical questions, contact: [email protected] www.vishay.com 5 T..RIA Series Vishay High Power Products Medium Power Phase Control Thyristors (Power Modules), 50 A/70 A/90 A 1300 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 1200 Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1100 1000 900 800 700 600 T50RIA.. Series 500 1 10 100 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ= 125°C No Voltage Reapplied Rated V RRMReapplied 1200 1100 1000 900 800 700 600 T50RIA.. Series 500 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 100 TJ= 25°C 10 TJ = 125°C T50RIA.. Series 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 30ohms; tr=0.5µs, tp>=6µs b) Recommended load line for <=30% rated di/dt : 20V, 65ohms 10 tr=1µs, tp>=6µs (b) (1) PGM = 10W, tp = 5ms (2) PGM = 20W, tp = 2ms (3) PGM = 50W, tp = 1ms (4) PGM = 100W, tp = 500µs (a) Tj=-40 °C 1 Tj=25 °C Tj=125 °C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 0.01 T50RIA.. Series 0.1 1 Frequency Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 8 - Gate Characteristics www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 93756 Revision: 03-Jun-08 T..RIA Series 130 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Medium Power Phase Control Thyristors Vishay High Power Products (Power Modules), 50 A/70 A/90 A T70RIA.. Series R thJC (DC) = 0.50 K/W 120 110 100 Conduction Angle 90 80 30° 70 60° 90° 60 120° 180° 50 0 10 20 30 40 50 60 70 130 T70RIA.. Series RthJC (DC) = 0.50 K/W 120 110 100 Conduction Period 90 80 60° 70 30° 180° DC 80 100 50 0 80 20 Average On-state Current (A) 40 60 120 Average On-state Current (A) Fig. 9 - Current Ratings Characteristics Fig. 10 - Current Ratings Characteristics 100 K/ W aR elt -D 1K /W RMS Limit 60 K/ W K/W .1 =0 70 0. 5 0.7 A 80 R thS 180° 120° 90° 60° 30° 90 /W 3K 0. Maximum Average On-state Power Loss (W) 90° 120° 60 1.5 K/W 2K /W 50 40 30 3K /W Conduction Angle 5 K/W 20 T70RIA.. Series TJ = 125°C 10 7 K/W 0 0 10 20 30 40 50 60 70 0 Average On-state Current (A) 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) 140 DC 180° 120° 90° 60° 30° W K/ ta el -D R RMS Limit 60 1 0. 80 = 100 0. 3 K/ W 0.5 K/ W 0.7 K/W 1K /W A thS 120 R Maximum Average On-state Power Loss (W) Fig. 11 - On-State Power Loss Characteristics 1.5 K/W Conduction Period 40 T70RIA.. Series TJ = 125°C 20 2K /W 3 K/W 5 K/W 0 0 20 40 60 80 100 Average On-state Current (A) 0 120 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) Fig. 12 - On-State Power Loss Characteristics Document Number: 93756 Revision: 03-Jun-08 For technical questions, contact: [email protected] www.vishay.com 7 T..RIA Series Vishay High Power Products Medium Power Phase Control Thyristors (Power Modules), 50 A/70 A/90 A 1700 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1400 1300 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 1500 1200 1100 1000 900 T70RIA.. Series 800 700 1 10 100 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied Rated VRRMReapplied 1600 1500 1400 1300 1200 1100 1000 900 800 T70RIA.. Series 700 600 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 13 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 100 TJ= 25°C 10 TJ= 125°C T70RIA.. Series 1 0 0.5 1 1.5 2 2.5 3 3.5 4 Instantaneous On-state Voltage (V) Fig. 15 - On-State Voltage Drop Characteristics Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 20ohms; tr=0.5µs, tp>=6µs b) Recommended load line for <=30% rated di/dt : 15V, 40ohms 10 tr=1µs, tp>=6µs (b) 1 (1) PGM = 12W, tp = 5ms (2) PGM = 30W, tp = 2ms (3) PGM = 60W, tp = 1ms (4) PGM = 200W, tp = 300µs (a) Tj=-40 °C Tj=25 °C Tj=125 °C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD 0.1 0.001 IGD 0.01 T70RIA.., T90RIA.. Series Frequency Limited by PG(AV) 0.1 1 10 100 1000 Instantaneous Gate Current (A) Fig. 16 - Gate Characteristics www.vishay.com 8 For technical questions, contact: [email protected] Document Number: 93756 Revision: 03-Jun-08 T..RIA Series 130 T90RIA.. Series R thJC (DC) = 0.38 K/W 120 110 100 Conduction Angle 90 80 30° 70 60° 90° 60 120° 180° 50 0 20 40 60 80 130 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Medium Power Phase Control Thyristors Vishay High Power Products (Power Modules), 50 A/70 A/90 A T90RIA.. Series R thJC (DC) = 0.38 K/W 120 110 100 Conduction Period 90 80 70 90° 60° 60 180° DC 50 0 100 20 40 60 80 100 120 140 160 Average On-state Current (A) Average On-state Current (A) Fig. 17 - Current Ratings Characteristics Fig. 18 - Current Ratings Characteristics 140 /W 1K 0. a elt -D RMS Limit 1K /W R 80 K/ W = 100 0. 3 0. 5K /W 0.7 K/W SA 180° 120° 90° 60° 30° 120 R th Maximum Average On-state Power Loss (W) 120° 30° 1.5 K/W 60 40 Conduction Angle 20 T90RIA Series TJ = 125°C 2 K/W 3 K/W 0 0 10 20 30 40 50 60 70 80 Average On-state Current (A) 0 90 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) 180 DC 180° 120° 90° 60° 30° W K/ ta el -D R 0. 5K /W 100 1 0. 120 0. 3K /W = 140 A thS 160 R Maximum Average On-state Power Loss (W) Fig. 19 - On-State Power Loss Characteristics 0.7 K/W 1K /W 80 RMS Limit 60 Conduction Period 40 T90RIA.. Series TJ = 125°C 20 1.5 K/W 2 K/ W 0 0 20 40 60 80 100 120 140 160 0 Average On-state Current (A) 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) Fig. 20 - On-State Power Loss Characteristics Document Number: 93756 Revision: 03-Jun-08 For technical questions, contact: [email protected] www.vishay.com 9 T..RIA Series Vishay High Power Products Medium Power Phase Control Thyristors (Power Modules), 50 A/70 A/90 A 1800 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1500 1400 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 1600 1300 1200 1100 1000 900 T90RIA.. Series 800 700 1 10 100 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied Rated VRRMReapplied 1700 1600 1500 1400 1300 1200 1100 1000 900 800 T90RIA.. Series 700 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 22 - Maximum Non-Repetitive Surge Current Fig. 21 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 100 TJ = 25°C TJ = 125°C 10 T90RIA.. Series 1 0 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJC (K/W) Fig. 23 - On-State Voltage Drop Characteristics 1 Steady State Value R thJC = 0.65 K/W R thJC = 0.50 K/W T50RIA.. Series R thJC = 0.38 K/W (DC Operation) T70RIA.. Series 0.1 0.01 0.001 T90RIA.. Series 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 24 - Thermal Impedance ZthJC Characteristics www.vishay.com 10 For technical questions, contact: [email protected] Document Number: 93756 Revision: 03-Jun-08 T..RIA Series Medium Power Phase Control Thyristors Vishay High Power Products (Power Modules), 50 A/70 A/90 A ORDERING INFORMATION TABLE Device code T 50 RIA 120 1 2 3 4 1 - Module type 2 - Current rating 3 - Circuit configuration 4 - Voltage code x 10 = VRRM CIRCUIT CONFIGURATION + G - LINKS TO RELATED DOCUMENTS Dimensions Document Number: 93756 Revision: 03-Jun-08 http://www.vishay.com/doc?95336 For technical questions, contact: [email protected] www.vishay.com 11 Outline Dimensions Vishay Semiconductors D-55 T-Module Thyristor Standard DIMENSIONS in millimeters (inches) 0.50 (0.20) 4.75 (0.19) 1.3 (0.05) 32 (1.26) MAX. 25 (0.98) MAX. 23.5 (0.93) 3 (0.12) 41 (1.61) MAX. 18 (0.71) 11 (0.43) 3 (0.12) G + 27 (1.06) 15 (0.59) 3.9 (0.15) 8 (0.31) - M5 30 (1.18) Document Number: 95336 Revision: 21-Jul-08 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000