VS-16RIA Series Datasheet

VS-16RIA Series
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Vishay Semiconductors
Medium Power Phase Control Thyristors
(Stud Version), 16 A
FEATURES
• Improved glass passivation for high reliability
and exceptional stability at high temperature
• High dI/dt and dV/dt capabilities
• Standard package
• Low thermal resistance
• Metric threads version available
TO-208AA (TO-48)
• Types up to 1200 V VDRM/VRRM
• Designed and qualified for industrial and consumer level
PRODUCT SUMMARY
Package
TO-208AA (TO-48)
Diode variation
Single SCR
IT(AV)
16 A
VDRM/VRRM
100 V, 200 V, 400 V, 600 V, 800 V,
1000 V, 1200 V
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Medium power switching
VTM
1.75 V
• Phase control applications
IGT
60 mA
TJ
-65 °C to +125 °C


MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
I2t
16
A
85
°C
35
A
50 Hz
340
60 Hz
360
50 Hz
574
60 Hz
524
VDRM/VRRM
tq
UNITS
TC
IT(RMS)
ITSM
VALUES
Typical
TJ
A
A2s
100 to 1200
V
110
μs
-65 to +125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VS-16RIA
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE (1)
V
VRSM, MAXIMUM NON-REPETITIVE IDRM/IRRM MAXIMUM
PEAK VOLTAGE (2)
AT TJ = TJ MAXIMUM
mA
V
10
100
150
20
200
300
40
400
500
60
600
700
80
800
900
100
1000
1100
120
1200
1300
20
10
Notes
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
(2) For voltage pulses with t  5 ms
p
Revision: 19-Nov-15
Document Number: 93695
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-16RIA Series
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
Maximum RMS on-state current
IT(AV)
TEST CONDITIONS
180° sinusoidal conduction
IT(RMS)
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
ITSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
I2t
No voltage
reapplied
16
A
85
°C
35
A
360
285
Sinusoidal half wave,
initial TJ = TJ maximum
100 % VRRM
reapplied
300
524
405
5740
(16.7 % x  x IT(AV) < I <  x IT(AV)),
TJ = TJ maximum
0.97
High level value of threshold voltage
VT(TO)2
(I >  x IT(AV)), TJ = TJ maximum
1.24
Low level value of
on-state slope resistance
rt1
(16.7 % x  x IT(AV) < I <  x IT(AV)), 
TJ = TJ maximum
17.9
High level value of
on-state slope resistance
rt2
(I >  x IT(AV)), TJ = TJ maximum
13.6
Ipk = 50 A, TJ = 25 °C
1.75
VTM
IH
Latching current
IL
TJ = 25 °C, anode supply 6 V, resistive load
A2s
375
t = 0.1 to 10 ms, no voltage reapplied,
TJ = TJ maximum
VT(TO)1
Maximum on-state voltage
A
574
Low level value of threshold voltage
Maximum holding current
UNITS
340
No voltage
reapplied
100 % VRRM
reapplied
VALUES
A2s
V
m
130
200
V
mA
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VDRM  600 V
Maximum rate of rise
of turned-on current
VDRM  800 V
VDRM  1000 V
VALUES
UNITS
200
dI/dt
TJ = TJ maximum, VDM = Rated VDRM
Gate pulse = 20 V, 15 , tp = 6 μs, tr = 0.1 μs maximum
ITM = (2 x rated dI/dt) A
VDRM  1600 V
180
160
A/μs
150
Typical turn-on time
tgt
TJ = 25 °C,
at rated VDRM/VRRM, TJ = 125 °C
Typical reverse recovery time
trr
TJ = TJ maximum,
ITM = IT(AV), tp > 200 μs, dI/dt = - 10 A/μs
Typical turn-off time
tq
TJ = TJ maximum, ITM = IT(AV), tp > 200 μs, VR = 100 V,
dI/dt = - 10 A/μs, dV/dt = 20 V/μs linear to 67 % VDRM,
gate bias 0 V to 100 W
0.9
4
μs
110
Note
• tq = 10 μs up to 600 V, tq = 30 μs up to 1600 V available on special request
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
SYMBOL
dV/dt
TEST CONDITIONS
VALUES
TJ = TJ maximum linear to 100 % rated VDRM
100
TJ = TJ maximum linear to 67 % rated VDRM
300 (1)
UNITS
V/μs
Note
(1) Available with: dV/dt = 1000 V/μs, to complete code add S90 i.e. 16RIA120S90
Revision: 19-Nov-15
Document Number: 93695
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-16RIA Series
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TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
TEST CONDITIONS
VALUES
8.0
TJ = TJ maximum
2.0
UNITS
W
Maximum peak positive gate current
IGM
TJ = TJ maximum
1.5
A
Maximum peak negative gate voltage
-VGM
TJ = TJ maximum
10
V
TJ = - 65 °C
90
DC gate current required to trigger
IGT
TJ = 25 °C
TJ = 125 °C
TJ = - 65 °C
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
VGT
IGD
VGD
60
Maximum required gate trigger 
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
35
3.0
TJ = 25 °C
2.0
TJ = 125 °C
1.0
TJ = TJ maximum, VDRM = Rated value
TJ = TJ maximum,
VDRM = Rated value
mA
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
V
2.0
mA
0.2
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
-65 to +125
°C
Maximum operating junction
and storage temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.86
Maximum thermal resistance,
case to heat sink
RthCS
Mounting surface, smooth, flat and greased
0.35
K/W
TO NUT
Lubricated threads
(Non-lubricated threads)
Mounting torque
Approximate weight
Case style
See dimensions - link at the end of datasheet
TO DEVICE
20 (27.5)
25
lbf in
0.23 (0.32)
0.29
kgf · m
2.3 (3.1)
2.8
N·m
14
g
0.49
oz.
TO-208AA (TO-48)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.21
0.15
120°
0.25
0.25
90°
0.31
0.34
60°
0.45
0.47
30°
0.76
0.76
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 19-Nov-15
Document Number: 93695
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-16RIA Series
130
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
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16RIA Series
RthJC (DC) = 1.15 K/W
120
110
100
Conduction Angle
90
30°
80
60°
90°
120°
70
180°
60
50
0
5
10
15
20
130
16RIA Series
RthJC (DC) = 1.15 K/W
120
110
100
Conduction Period
90
30°
60°
80
90°
120°
70
180°
60
DC
50
0
25
10
Fig. 1 - Current Ratings Characteristics
30
40
Fig. 2 - Current Ratings Characteristics
45
35
15
Conduction Angle
10
16RIA Series
TJ = 125°C
5
R
20
a
elt
-D
3K
/W
4K
/W
5K
/W
7K
/W
RMS Limit
25
K/
W
W
K/
30
2
1
0.
180°
120°
90°
60°
30°
40
=
A
hS
R t
Maximum Average On-state Power Loss (W)
20
Average On-state Current (A)
Average On-state Current (A)
10 K/
W
0
0
5
10
15
20
25
0
Average On-state Current (A)
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
45
35
Conduction Period
10
16RIA Series
TJ = 125°C
5
R
RMS Limit
20
a
elt
-D
3K
/W
4K
/W
5K
/W
7K
/W
25
15
K/
W
W
K/
30
2
1
0.
DC
180°
120°
90°
60°
30°
40
=
A
hS
R t
Maximum Average On-state Power Loss (W)
Fig. 3 - On-State Power Loss Characteristics
10 K/W
0
0
4
8
12
16
20
Average On-state Current (A)
24
28
0
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Revision: 19-Nov-15
Document Number: 93695
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VS-16RIA Series
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350
At Any Rated Load Condition And With
Rated V RRMApplied Following Surge.
Initial TJ= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
280
260
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
300
Vishay Semiconductors
240
220
200
180
16RIA Series
160
140
1
10
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ= 125°C
No Voltage Reapplied
Rated VRRMReapplied
325
300
275
250
225
200
175
16RIA Series
150
125
0.01
100
0.1
1
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
Instantaneous On-state Current (A)
16RIA Series
100
10
TJ = 25°C
TJ = 125°C
1
0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state Voltage (V)
Transient Thermal Impedance Z thJC (K/W)
Fig. 7 - Forward Voltage Drop Characteristics
10
Steady State Value
RthJC = 1.15 K/W
(DC Operation)
1
0.1
16RIA Series
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Revision: 19-Nov-15
Document Number: 93695
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VS-16RIA Series
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Rectangular gate pulse
a) Recommended load line for
rated di/dt : 10V, 20ohms
tr <=0.5 µs, tp >= 6 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 65ohms
10
tr<=1 µs, tp >= 6 µs
(1) PGM = 16W,
(2) PGM = 30W,
(3) PGM = 60W,
(4) PGM = 60W,
tp = 4ms
tp = 2ms
tp = 1ms
tp = 1ms
(a)
(b)
VGD
Tj = -65 °C
Tj = 125 °C
1
Tj = 25 °C
Instantaneous Gate Voltage (V)
100
(1)
IGD
(2) (3)
(4)
16RIA Series Frequency Limited by PG(AV)
0.1
0.001
0.01
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
16
RIA
120
M
S90
1
2
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Current code
3
-
Essential part number
4
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
5
-
None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A
M = Stud base TO-208AA (TO-48) M6 x 1
6
-
Critical dV/dt:
None = 300 V/µs (standard value)
S90 = 1000 V/µs (special selection)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95333
Revision: 19-Nov-15
Document Number: 93695
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-208AA (TO-48)
DIMENSIONS in millimeters (inches)
Ø 1.7/1.8
(Ø 0.06/0.07)
Ø 3.9/4.1
(Ø 0.15/0.16)
30.2 MAX.
(0.18 MAX.)
22.2 MAX.
(0.87 MAX.)
12.8 MAX.
(0.5 MAX.)
10.7/11.5
(0.42/0.45)
1/4"-28UNF-2A
For metric device M6 x 1
Ø 15.5
(Ø 0.61)
(0 3.1
.1 /3
2/ .3
0.
1.
13
(0 24
)
.0 /1
4/ .4
0. 4
05
)
13.8/14.3
(0.54/0.56)
Across flats
45°
Document Number: 95333
Revision: 07-Jul-08
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