Safeguard sensitive ICs - Increase battery life - Save space With NXP key products as recommended in this brochure Interface / Function Description Product type Package NFC antenna protection 18 / 24 V Birectional low capacitance ESD protection diode PESD18VF1BL PESD24VF1BL PESD18VF1BSF PESD24VF1BSF DFN1006 DFN1006 DSN0603 DSN0603 10 MIPI CSI / DSI protection Common Mode Filter with integrated ESD protection PCMF2DFN1 PCMF3DFN1 DFN2520 DFN4020 11 Integrated or discrete solutions with very low line capacitance IP4369CX4 / IP4303CX4 PRTR5V0U2F IP4282CZ6 PUSB3F96 PESD5V0F1BSF USB 2.0 OTG protection and EMI filter Common mode filter for USB2.0 IP3319CX6 WLCSP 12 USB On-The-Go (OTG) protection Protection of microUSB ports Vbus protection with VRWM = 5.5, 12, 15, or 30 V PUSBMxVX4-TL series DFN1616 13 HDMI interface protection Very good system protection for highspeed TMDS lines PUSB3F96 DFN2510 12 SIM Card protection ESD protection diodes with and without EMI Filtering IP4064CX8 IP4364CX8 IP4365CX11 IP4366CX8 IP4264CZ8 PESD5V0V4Ux family PESD5V0F5UF PESD5V0F5UV WLCSP WLCSP WLCSP WLCSP several small SMD and DFN packages SD Card protection Devices for protection and interface conditioning IP4340CX15 IP4357CX17 IP4251CZ12 IP4252CZ12 WLCSP WLCSP DFN2514 DFN2514 15 Audio Interface protection (Headset, Speaker, Mic) Bidirectional ESD protection diode with 12 V reverse standoff voltage PESD12VV1BL DFN1006 12 Battery protection / Charger interface Battery MOSFET / MOSFETs in the pass element PMPB15XP PMDP58UPE PMDPB70XP DFN2020 DFN2020 DFN2020 16 Surge protection / Charger interface Transient Voltage Suppressor (TVS) Voltage regulator diode Zener diodes PTVS12VS1UR PTVS26VS1UR BZX884-C5V6 TDZ5V6J SOD123W SOD123W DFN1006 SOD323F 16 USB 3.0 / USB 2.0 High-Speed protection Page DFN1006 DFN1010 DFN2510 DSN0603 copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under Printed in the Netherlands Package Generic ESD protection in smallest form factors Various ESD protection diodes for generic and highspeed applications PESDxSF series PESDxBL / PESDxUL PESDxBLD / PESDxULD DSN0603 DFN1006 DFN1006 DFN1006D DFN1006D 4, 5 Boost converter for LED backlight 20, 40 V, up to 2 A, low VF Schottky rectifiers PMEGxEPK series DFN1608D 8 Wireless charging Very efficient low RDSon MOSFETs Very efficient low VF and IR Schottky diodes PMPB12UN PMPB15XN PMDPB85UPE PMPB16XN PMPB40SNA PMPB33XP PMPB48EP PMEGxEPK series PMEGxBELD series DFN2020 DFN2020 DFN2020 DFN2020 DFN2020 DFN2020 DFN2020 DFN1608D DFN1006D 17 Ultra-small MOSFETs for } Load switches }B attery / Charger switches } DC-DC conversion 12-60 V DFN MOSFETs PMXB40UNE PMXB65UPE PMDXB950UPE PMDXB900UNE PMCXB900UE PMZB290UN PMZ250UN 2N7002BKMB NX3008NBKMB NX3008PBKMB PMZB350UPE PMPB15XP PMDPB70XP PMC85XP PMDPB58UPE PMPB11EN PMPB20EN DFN1010 DFN1010 DFN1010 DFN1010 DFN1010 DFN1006 DFN1006 DFN1006 DFN1006 DFN1006 DFN1006 DFN2020 DFN2020 DFN2020 DFN2020 DFN2020 DFN2020 6, 7 Bipolar transistor / MOSFET for } Load switches } Power management } Charger circuits PNP low VCEsat transistor / N-ch. Trench MOSFET combination PBSM5240PF DFN2020 9 Bipolar transistors for the Charger path Low VCEsat Transistors PBSS5330PA PBSS230QA PBSS5330X PBSS5320X PBSS301PD DFN2020 DFN1010 SOT89 SOT89 SOT457 9 14 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the Document order number: 9397 750 17444 Product type 13 © 2013 NXP Semiconductors N.V. Date of release: September 2013 Description WLCSP www.nxp.com patent- or other industrial or intellectual property rights. Interface / Function Page Discretes for portable devices and mobile handsets Setting the standard in performance, efficiency, and size NXP: Your one-stop-shop discrete partner for mobile devices Looking for solutions to } Safeguard sensitive ICs } Increase battery life } Save space An NXP discrete solution for every interface • NFC Antenna protection Page 10 • USB2.0, USB3.0, USB OTG with Vbus protection Page 12, 13 • Battery protection Page 16 • Camera, Keypad, Display (MIPI, DSI, CSI) Page 11 • Microphone, speaker, head set Page 12 • (SD-)Memory Cards, SIM Cards Page 14, 15 Benefit from our experience and speed up time-to-market! We offer: } 60 years experience in developing and producing diodes and transistors } Long-standing partnerships with every major handset maker in the industry } Commitment to highest quality standards and a reliable, efficient supply infrastructure, we are the no. 1 discrete supplier in units } One of the most comprehensive discrete portfolio perfectly fitting the needs of mobile device makers with - Advanced protection and filtering solutions -H ighly efficient Schottky diodes, small-signal MOSFETs, and bipolar transistors - Next generation package solutions • Wireless charging Page 17 • LED backlight boost converter Page 8 • HDMI protection Page 12 • Generic ESD protection Page 4, 5 • Ultra-small MOS and bipolar transistors for } Load switches } Charger / battery switches } DC-DC conversion Page 6, 7, 9 Choose the solution you need from NXP‘s broad range of Discrete Flat No-leads (DFN) packages – one of the most extensive in industry } More than 30 leadless package options, from 2 to 32 pins } From ultra-small 0603 size (0201 inch) to medium power Package highlights include Packages with heat sink at die pad and dual die pad } Thermal excellence, for high power on a small footprint, enabling smaller designs } Multiple configurations possible Package highlights include Packages with tin-plated and 100% solderable side pads } Enabling visual inspection of solder joints } For enhanced robustness, optimized for maximum sheer forces, board bending and reduced package tilting angle } Four package options available with 2, 3, and 6 pins Largest discrete portfolio in Ultra-small DSN0603 package 1 x 1 mm and 1 x 0.6 mm packages, 0.6 x 0.3 mm only 0.37 mm high only 0.3 mm high Download DFN Package poster Superior thermal performance: With a high power dissipation density DFN2020 far exceeds SO-8. More details in Application note 11304. Download now: 2 Mobile brochure Application note 11304: www.nxp.com/documents/application_note/AN11304.pdf DFN Package Poster www.nxp.com/documents/other/Discrete_Flat_No-leads_DFN_package_poster.pdf Mobile brochure 3 Best protection in smallest packages – NXP ESD protection solutions in 1006- and 0603- size Industry’s broadest portfolio of protection diodes in DFN1006(D)-2 As devices are getting smaller and data rates faster, today’s electronic circuits are increasingly sensitive to ESD. NXP offers a large portfolio of ESD protection diodes in the leadless ultra-small plastic package DFN1006(D)-2 with the industry standard outline 0603 (0402 inch). Key features and benefits: } Ultra-small package size of 1 x 0.6 mm and a height of 0.37 mm / 0.5 mm } Up to 30 kV ESD robustness according to IEC61000-4-2 } Up to 15 A peak pulse current for an 8/20 µs pulse } Ultra low leakage current of 1 nA typical – ideal for battery powered devices }P ackage version with tin-plated, solderable side pads available (DFN1006D-2) (fully compatible to standard leadless 1006, 2-pin packages) DSN0603-2 – the smallest available package for protection diodes NXP continuously extends its protection portfolio in DSN0603-2 (0201 inch) – the ideal fit for protection solutions like data-, speaker- and microphone-line protection or keypad protection in smart phones or tablets, but also for high-speed interface protection. DFN1006D-2 Outline 0.4 max 0.65 0.55 0.30 0.22 2 0.65 0.30 0.22 1.05 0.95 0.15 0.13 1 1 0.55 0.45 DSN0603-2 Outline Key features and benefits: }U ltra small package size of 0.6 x 0.3 mm and ultra low package height of only 0.3 mm save PCB space }U p to 30 kV ESD robustness according to IEC61000-4-2 }U p to 8 A peak pulse current for an 8/20 µs pulse }U ltra low leakage current of 1 nA typical and 0.1 µA max. – ideal for battery powered devices } L ine capacitances down to 0.25 pF cathode marking on top side DFN1006-2 Outline Portfolio: }G eneral purpose devices with high surge rating and ESD robustness and better clamping performance }U ni-directional ESD protection diodes for a wide range of max. reverse operating voltages VRWM 2 0.25 0.23 0.4 0.625 0.575 0.325 0.275 0.32 0.28 0.0076 (2) Note 1. Dimension A is including coating foil thickness. 2. The marking bar indicates the cathode. Highlight product: PESD5V0F1BSF } Ultra low line capacitance of 0.25 pF }M inimized capacitance variation over voltage }H igh ESD robustness = 10 kV } Bi-directional configuration to cover many applications where AC signals need to be handled or lowest capacitance values are indispensable High speed data lines Low capacitance More key products: Key products: PESD3V3X1BL PESD5V0X1BCAL PESD5V0X1BL PESD5V0V1BL PESD5V0F1BL PESD5V0X1BCL PESD12VV1BL PESD18VF1BL Cd (typ.) in pF 1.3 0.85 0.9 11 0.4 0.49 17 0.4 VRWM in V 3.3 5 5 5 5.5 5.5 12 18 VESD in kV (IEC61000-4-2) 9 15 9 30 10 8 30 10 Uni-directional diodes in DFN1006-2 (SOD882) PESD3V3U1UL PESD3V3L1UL PESD3V3S1UL PESD5V0U1UL PESD5V0L1UL PESD9X5.0L PESD5V0S1UL PESD9X7.0L PESD12VS1UL PESD15VS1UL PESD16VX1UL PESD24VS1UL PESD36VS1UL Cd (typ.) in pF 2.6 34 207 2 25 68 152 62 38 32 0.83 23 18 VRWM in V 3.3 3.3 3.3 5 5 5 5 7 12 15 16 24 36 VESD in kV (IEC61000-4-2) 9 30 30 9 26 30 30 30 30 30 8 23 30 Bi-directional diodes in DFN1006D-2 (SOD882D) PESD5V0U1BLD PESD5V0V1BLD PESD5V0S1BLD PESD5V0F1BLD Cd (typ.) in pF 2.9 11 35 0.4 VRWM in V 5 5 5 5.5 VESD in kV (IEC61000-4-2) 10 30 30 10 Mobile brochure PESD5V0F1BSF, 0.25 pF USB2.0 PESD5V0F1USF, 0.5 pF Unidirectional Bidirectional PESD18VF1BSF, 0.3 pF PESD24VF1BSF, 0.4 pF /24V - For NFC antenna NFC PESD5V0V1USF, 4 pF, 15 kV PESD5V0V1BSF, 3.5 pF, 15 kV Uni-directional diodes in DFN1006D-2 (SOD882D) PESD5V0L1ULD PESD5V0S1ULD PESD5V0X1ULD PESD5V0X1UALD PESD12VS1ULD PESD15VS1ULD PESD24VS1ULD Cd (typ.) in pF 25 152 0.95 1.55 38 32 23 VRWM in V 5 5 5.5 5.5 12 15 24 VESD in kV (IEC61000-4-2) 26 30 8 15 30 30 23 View complete ESD protection portfolio PESD5V0V1BCSF, 5.3 pF, 20 kV PESD5V0V1BDSF, 5.3 pF, 25 kV PESD5V0L1USF, 12 pF, 30 kV General protection PESD5V0L1BSF, 12 pF, 30 kV PESD5V0S1USF, 35 pF, 30 kV PESD5V0S1BSF, 35 pF, 30 kV Visit the DSN0603-2 ESD product information page 8 kV -10 kV www.nxp.com/products/esd_emi_and_signal_conditioning/ 4 eSATA USB3.0 Low speed data lines High capacitance Bi-directional diodes in DFN1006-2 (SOD882) Interfaces PESD5V0F1BRSF, 0.25 pF 15 kV > = 20kV www.nxp.com/group/11064 Mobile brochure 5 High performance MOSFETs in small packages – for switching and power conversion Discover NXP’s extensive range of high-performance, low RDSon MOSFETs in small form factors – DFN packages save >50% space at same electrical performance of larger gullwing packages – Solutions for very small low-power actuators and low-ohmic switches – DFN MOSFETs in portable applications – Key products for load switches in power management units } DFN2020MD-6 with 1.7 W power capability replaces larger gullwing packages like SO8, BODY DIODE Vout Vin SOT223, SOT89, and SOT457 LOAD PATH P-FET R1 R2 } DFN1010D-3 with 1 W power capability replaces SOT457 and SOT23 low RDSon types on a 85% reduced footprint size RLOAD CONTROL N-FET CONTROL SIGNAL BODY DIODE } DFN1006 with 0.7 W power capability PMXB40UNE PMXB65UPE PMDXB950UPE PMDXB900UNE PMCXB900UE PMZB290UN PMZ250UN 2N7002BKMB NX3008NBKMB NX3008PBKMB PMZB350UPE Polarity VDS (V) RDSon typ (mΩ) Package N P Dual P Dual N Compl. N N N N P P 12 12 20 20 20 20 20 60 30 30 20 40 65 950 900 900/950 290 250 1300 1000 2800 330 DFN1010 DFN1010 DFN1010 DFN1010 DFN1010 DFN1006 DFN1006 DFN1006 DFN1006 DFN1006 DFN1006 Polarity VDS (V) RDSon typ (mΩ) Package P Dual P P + RET driver Dual P 12 30 30 20 15 70 85 58 DFN2020 DFN2020 DFN2020 DFN2020 Polarity VDS (V) RDSon typ (mΩ) Package N N 30 30 12 16.5 DFN2020 DFN2020 replaces a large range of standard packages like SOT23, SOT323, SOT416, and “1208size” (VEMT3, SOT723 …) The Ultimate in Miniaturization: DFN1006(B)-3 85% space reduction Same power dissipation (350 mW) } 1.0 mm x 0.6 mm, height 0.37 mm (DFN1006(B)-3), 1.2 mm² solder layout DFN1010D-3 and DFN1010B-6: } 1.1 x 1.0 x 0.37 mm } Single die, with heatsink and dual die, with two heatsinks } Tin-plated solderable side pads for single package } Power dissipation: 1 W (single) and 350 mW (dual) }R DSon range down to 50 mΩ and ID up to 3A Q1 Q2 VBUS PMU 0.5 mm (DFN1006-3) } Very low Rds(on) values of less than 0.65mΩ at 2.5 V PMPB15XP PMDPB70XP PMC85XP PMDPB58UPE PMDPB58UPE DFN1006(B)-3: } Single N- and P-channel MOSFETs 9 mm² solder layout Key products for battery switches / charger switches GND GND ESD-protected devices Key products for DC-DC conversion in Notebooks and Tablets PMPB11EN PMPB20EN DFN2020MD-6 / DFN2020-6: } 2.0 x 2.0 x 0.65 mm } Single/dual die, with heatsinks } Tin-plated solderable side pads for single version } Power dissipation: 1.7 W (single) and 1.2 W (dual) } RDSon range down to 10 mΩ and ID up to 13 A More about NXP ultra-small MOSFETs www.nxp.com/ultra-small-mosfets 6 Mobile brochure Mobile brochure 7 Highest efficiency in smallest packages – NXP low lo ss Schottky diodes and transistors in leadless DFN Low VF Schottky rectifiers in small and flat leadless packages – Extremely low VF with low IR, covering a current range of 0.2 – 2 A – DFN1608D-2 is the smallest package on the market capable of carrying a current of 2 A. Key features and benefits: } Space saving ultra-small package size with low height (1.6 x 0.8 x 0.37 mm) } Low values for VF and IR – ideal for battery powered devices } IF up to 2 A } With tin-plated, solderable side pads } AEC-Q101 qualified } The best possible protection of the NFC system – made by the global Low VCEsat Transistors - Keeping power consumption and heat dissipation to a minimum Key product PBSM5240PF: PNP low VCEsat transistor / N-ch. Trench MOSFET combination in DFN2020-6 For slim designs and best-in-class thermal performance to support higher currents and longer lifetimes. Application areas: }B oost converter for LED backlight and 5 V USB-OTG supply (DC-DC up-conversion) }W ireless charging (passive rectification, efficiency enhancement) } Logic (low-cost OR gate, AND gate) } Power (OR-ring of multiple supply voltage) leader for ESD protection and NFC solutions > 9 mm² footprint 4 mm2 footprint Optimization IF max (A) VR max (V) VF max (mV) @ IF max IR max (mA) @VR max LED backlight boost converter low VF low VF low VF low VF low IR low IR low IR low IR 0.5 1 1.5 2 0.5 1 1.5 2 20 20 20 20 40 40 40 40 410 415 420 450 590 600 610 660 0.3 0.6 0.9 0.9 0.01 0.02 0.03 0.03 Type number PBSM5240PF = +50% footprint reduction, lower height! Conventional solution (BJT + MOS) requires two packages } High collector current gain (hFE) at high IC } Low-voltage MOSFET driver stage Key products in DFN1608D-2: PMEG2005EPK PMEG2010EPK PMEG2015EPK PMEG2020EPK PMEG4005EPK, PMEG4010EPK PMEG4015EPK PMEG4020EPK }2 5% better thermal performance due to heat sink in DFN2020-6 leading to higher currents and longer lifetimes. }V ery low collector-emitter saturation voltage VCEsat } High collector current capability IC and ICM DCin Applications } L oad switches }P ower management }C harging circuits SWout FB DC/DC controller T1 PBSM5240PF Vc RSense BATT PMU GND GND brb672 Sink1 Sink2 Key product BC847QAPN: 45 V, 100 mA general purpose double NPN/PNP in a 1 x 1 mm package The first double bipolar transistors in DFN1010B-6 offering tremendous package size reduction while keeping the same power density compared to SOT363 or SOT666. DFN1608D-2 combines improved performance with reduced size Further single transistors are available in a leadless, ultra small DFN1010D-3 package, the fourth NXP DFN package with visible and solderable sidepads. I F / VF Miniaturization High Key products as typically used in the charger path of feature phones and entry level smart phones: Performance Low 0.37 mm Small 0.6 mm 1.1 mm Size Large Type number Package transistor polarity Ptot [max](mW) VCEO [max](V) IC [max](A) VCEsat [max](mV) RCEsat@IC [max]; IC/IB =10 [typ] (mΩ) hFE [min] fT [typ](MHz) PBSS5330PA PBSS230QA PBSS5330X PBSS5320X PBSS301PD DFN2020-3 DFN1010D-3 SOT89 SOT89 SOT457 PNP PNP PNP PNP PNP 1250 750 1600 1600 2500 -30 -30 -30 -20 -20 -3 -2 -3 -3 -4 -320 -440 -320 -300 -420 75 170 80 90 50 280 200 200 220 250 165 170 100 100 80 Many more Schottky rectifiers available in ultra-small DFN1006(D)-2 and DSN0603-2 View complete portfolio Low VF rectifiers www.nxp.com/products/diodes/medium_power_schottky_diodes_200_ma 8 Mobile brochure View complete portfolio Low VCEsat transistors www.nxp.com/products/bipolar_transistors/low_vcesat_biss_transistors Mobile brochure 9 Protection of Near-Field Communication antenna circuits Common Mode Filter with integrated ESD protection for MIPI CSI, DSI New high-performance, small form factor devices to protect the NFC antenna terminal Near-Field Communication (NFC) is the breakthrough technology that allows tags in posters, check-in signs, and contactless payment terminals to interact with your mobile phone. The antenna for NFC is integrated into the battery cover or the battery itself in many cases and is connected to the NFC ICs via small contacts on the phone. These contacts are an entry point for ESD strikes which are potentially hazardous to the NFC IC. The NXP solution offers: } Bi-directional configuration, allowing operating voltages up to 18 / 24 V } Low capacitance enabling easy design of the antenna matching circuit } Very small voltage dependency of the diode capacitance avoiding intermodulation distortion } Small form factor packages down to the 0603 (0201 inch) size } The best possible protection of NFC systems - from the global leader in ESD protection and NFC New Common Mode Filters: Minimizing EMI disturbances, offering stong system protection, outperforming all other solutions In the world of high-speed differential data lines (e.g. USB, MIPI, HDMI, LVDS), the spectrum of wired data signals overlaps with the frequencies used in wireless transceiver modules like GSM, WIFI, LTE, and Bluetooth. Electromagnetic interference (EMI) is therefore almost unavoidable. Careful system design and additional components can help minimize disturbances caused by EMI. Common mode filters are designed to transmit the desired wire-bound signal without degradation while suppressing the unwanted EMI noise. No. of protected lines PESD18VF1BL VRWM (V) 1 PESD18VF1BSF PESD24VF1BL* Cline max (pF) 0.35 0.30 18 1 PESD24VF1BSF* Cline typ (pF) 24 0.4 ESD rating max (kV) 0.50 0.45 10 0.55 10 Configuration Bi-directional Bi-directional Package Size (mm) DFN1006-2 1 x 0.6 x 0.47 DSN0603-2 0.6 x 0.3 x 0.3 DFN1006-2 1 x 0.6 x 0.47 VRWM input ESD rating IEC 6100-4-2 Channel series resistance Package / Size (mm) < -24 dB 0.8 pF 5.5 V 15 kV 8 Ohm DFN2520-9 / 2.5 x 2.0 x 0.5 DFN4020-14 / 4.0 x 2.0 x 0.5 DSN0603-2 0.6 x 0.3 x 0.3 Scc21 (dB) Scc21 (dB) 0 0 -5 -5 -10 -10 -15 NFC antenna ESD protection – Circuit diagram 0.6 -15 -20 Competitors -25 Ferrite / Ceramic -20 Competitors -25 Silicon PCMFxDFN1 NFC controller 0.5 Diode capacitance (pF) 3 GHz Common mode suppression : NXP CMF outperform all Ferrite / Ceramic / Silicon solutions * In development Very small variation of diode capacitance versus bias voltage C_d, typical 0 0 Common Mode insertion loss 800 MHz 2.4 GHz (typ.) Number of protected line pairs (bidirectional) 2 3 Differential Mode 3 dB frequency (typ.) Number of protected line pairs (unidirectional) PCMF2DFN1 PCMF3DFN1 } Industry-leading bandwidth of Common-Mode suppression for minimized EMI-emission and susceptibility saves time-consuming searches for EMI sources }H igh system-level ESD protection due to deep snapback and low dynamic resistance } Very thin package: 0.5 mm max. and industry standard footprint }S horter time-to-market due to minimized impact on signal integrity and simplified “out-of-the-box“ design Key products: Type number Type name Key products: filter circuit matching circuit antenna terminal + ESD protection antenna coil PCMFxDFN1 -30 -30 -35 1E7 1E8 1E9 freq (Hz) 8E9 -35 1E7 1E8 freq (Hz) 1E9 8E9 0.4 0.3 0.2 PCMF3DFN1 CLK_P CLK_N 0.1 D0_P -10 -5 0 5 10 15 20 DC bias voltage (V) LIQUID CRYSTAL DISPLAY (LCD) D1_P D1_N FLEX FOIL CONNECTOR -15 MIPI LANE MODULE 0 -20 FLEX FOIL D0_N D2_P D2_N More information about NXP antenna protection D3_P More information about NXP Common Mode Filters D3_N PCMF2DFN1 SYSTEM-ON-CHIP (SoC) SUPPLY, CONTROL AND BACKLIGHT aaa-007393 www.nxp.com/products/esd_emi_and_signal_conditioning/application_specific_esd_and_esd_emi_solutions/nfc_antenna_protection/ 10 Mobile brochure Using PCMFDFN1 in a MIPI DSI display interface www.nxp.com/group/11629 Mobile brochure 11 USB 2.0 OTG protection and EMI filter High-Speed USB protection Key product: IP3319CX6 } Very good Common Mode suppression in the GSM/3G/LTE bands } Very good differential mode pass band } E xcellent SoC protection against ESD pulses } Package details: WLCSP, 1.34 x 0.95 x 0.57 mm3 USB 3.0 and USB 2.0 High-Speed (HS) devices: Choose from integrated or discrete solutions ESD protection devices supporting this standard require very low line capacitance and allows no series resistors in the data lines. Available in CSP, leadless or plastic packages, NXP offers highly integrated solutions deliver high robustness against ESD pulses and are easy to route as well as discrete, very flexible and ultra-small solutions. C2 to USB controller αil (dB) 0 (1) -6 (2) -12 -18 (1) Differential pass band, f3dB > 1 GHz Key products: (2) Common mode suppression IP4369CX4 / IP4303CX4 PRTR5V0U2F IP4282CZ6 } Superior ESD and RF performance } Small plastic package DFN1006-3 } Small plastic package } Very small footprint (WLCSP) } Simple “pass-thru” routing } Simple “pass-thru” routing } 0.8 pF line capacitance } AEC-Q101 qualified } 0.7 pF line capacitance A2 A1 B1 B2 -24 C2 +5V Micro USB type B 1 -30 105 106 107 108 109 f (Hz) 1010 } 1.0 pF line capacitance IP3319CX6 C1 USB 2.0 USB CONNECTOR VBus Dat+ DatID HDMI interface protection A1 A1 This device offers best protection for the various signals of the HDMI interface and allows a very flexible layout. For the high-speed TMDS lines PUSB3F96 offers superior system protection with very small capacitance on each signal line. The lower-speed communication interface can be protected by dedicated single and dual protection devices that match the electrical requirements. B2 D+ IP4369CX4 B1 VBUS 1 6 2 5 3 4 D− V BUS D- A2 A2 B1 Key product: PUSB3F96 D− USB layout optimazed solution IP4282CZ6 (SOT886) Hi-SPEED USB TRANSCEIVER VBUS GND B2 D+ D+ GND GND IP4282CZ6 006aac466 IP4303CX4 PUSB3F96 PESD5V0F1BSF } Industry’s best overall protection for USB 3.0 system chips } Flexible layout options } E xtremely low channel capacitance: 0.5 pF (typ) } Extremely low diode capacitance: 0.25 pF (typ) } Very low dynamic resistance (less than 0.4 Ω) for both polarities } Ultra-small DSN0603-2 package (0.6 x 0.3 x 0.3 mm) } RF-optimized DFN2510A-10 (SOT1176) package (1 x 2.5 x 0.5 mm) Features } ESD protection of ±10 kV according to IEC 61000-4-2, level 4 for all TMDS lines } TMDS lines with ≤ 0.05 pF matching capacitance between TMDS pairs } Line capacitance of only 0.5 pF for each differential channel Audio interface protection (Speaker, Mic, Headset) USB On-The-Go (OTG) protection Key product: PUSBMxVX4-TL series - ideally suited for the protection of micro-USB ports } Vbus protection with VRWM = 5.5, 12, 15 or 30 V, suitable for a range of charging applications } 1.6 x 1.6 mm leadless DFN1616-6 package, space saving, industry-standard footprint, easy to place } 1.1 pF low capacitance ESD protection structure for USB D+, D- and ID } Ultra-low-clamping ESD protection } Complies with the YT/D 1591-2006 / 2009 standard (China) and GSMA / OMTP Universal Charging Solution (UCS) Vbus working voltages of the PUSBM series Key product: PESD12VV1BL in ultra-small DFN1006-2 } Bi-directional ESD protection diode with 12 V reverse standoff voltage } Low capacitance of 17 pF (typ.) } Ideal for protecting speaker lines in portable devices, particularly active boost drivers with high output voltages PUSBM5V5X4-TL PUSBM12VX4-TL PUSBM15VX4-TL PUSBM30VX4-TL VRWM of 5.5 V for V bus VRWM of 12 V for V bus VRWM of 15 V for V bus Equivalent circuit of the complete PUSBM device Read more about NXP Circuit protection = outside connector pin = internal connection VRWM of 30 V for V bus www.nxp.com/circuit-protection 12 Mobile brochure Mobile brochure 13 SIM card interface – ESD protection and EMI filter Key products: IP4064CX8/LF, IP4364CX8/LF, IP4264CX8-20, IP4264CZ8-40 } 3 -channel SIM card interface integrated RC-filter array } Integrated 100 Ω/100 Ω/47 Ω series channel resistors } Suppression of all 2G and 3G mobile phone frequencies } Downstream ESD protection up to ±15 kV (contact), exceeding IEC 61000-4-2, level 4 for ultra-robust ESD protection with low clamping voltage } Available in leadless and wafer-level chip-scale packages with 0.5 or 0.4 mm pitch, simplifying design and saving space IP4264CZ8 – SIM Application I/O CLK VPP RST IP4252CZ12-6 VCC Strict EMI regulations and system requirements – as specified for mobile phones – demand filters that reduce the radiated and/or conducted EMI, but which still comply with the electrical requirements of the interface specification. The continuing trend in miniaturization of portable appliances implies that interface devices offering ESD protection and EMI filtering should also, where possible, integrate biasing circuits or resistors into a single, small-sized package. VPP 100 nF brb448 IP4365CX11 – SIM Application IEC61000-4-2 level 1 protection pins IEC61000-4-2 level 4 protection pins R1 R2 B1 NXP’s SD-memory card interface conditioning devices fully support this continuing trend and offer interface conditioning functions such as: }H igh-level ESD protection according the IEC61000-4-2 standard, often exceeding the highest level 4 specification }E MI filtering, suppressing unwanted RF, in combination with SD interface compliant physical signaling } Integrated biasing resistor networks to reduce component count and to free up additional space on the PCB B3 47 R3 C3 100 D1 D2 D3 A2, C2 008aaa216 IP4264CZ8 – USIM Application VSIM D3 CLK I/O USB A1 R1 A3 100 B1 R2 B3 47 C1 R3 C3 100 VCC GND RST SPU CLK I/O D2 D− SIM/smart card baseband A2, C2 008aaa217 Product details Type number Cline (pF) Pitch (mm) Package Size (mm) IP4064CX8 <20 pF 0.5 mm CSP 1.41 x 1.41 mm IP4364CX8 <20 pF 0.4 mm CSP 1.16 x 1.16 mm IP4365CX11 <10 pF 0.4 mm CSP 1.16 x 1.56 mm IP4366CX8 <10 pF 0.4 mm CSP 1.16 x 1.16 mm IP4264CZ8 10 pF / 40 pF 0.4 mm Plastic 1.35 x 1.75 mm Key products for alternative ESD protection without EMI Filtering PESD5V0F5UF and PESD5V0F5UV } Unidirectional fivefold ESD protection array } Small DFN1006-3, DFN1410-6 and SOT666 plastic packages } Femtofarad line capacitance of 0.55 pF (typ.) } AEC-Q101 qualified PESD5V0V4Ux – SIM Application I/O VPP CLK RST to interface 1 DAT3/CD DAT2 SET_CLR_CARD_DETECT (ACMD42) CLK VCC(V SD ) 50 kΩ pull-up CMD DAT3/CD DAT3/CD-pull-down > 270 kΩ, Exact value depends on required logic levels DAT2 IP4340CX15 – Pin configuration and bump A1 index area VCC 1 2 3 4 R13 R12 R11 CLK A CMD DATA0 B DATA1 DATA2 C DATA3 R10 R9 R1 SDCLK R2 SDCMD R3 SDDATA0 R4 SDDATA1 R5 SDDATA2 R6 SDDATA3 D GND aaa-003573 aaa-003575 Transparent top view Key product: IP4340CX15 } Provides EMI filtering and ESD protection for six channels of an SD card interface } Pull-up resistors for the data lines already integrated to reduce the PCB area and application size } 1.56 x 1.56 mm wafer-level chip-scale package (WLCSP), fabricated using monolithic silicon semiconductor technology } At the connector side terminals, the ESD protection exceeds 15 kV acc. to IEC 61000-4-2 test condition Type number Application Feature 3 dB frequency (MHz) Package Size (mm) IP4340CX15 SD3.0 and 2.0 Small SD3.0 solution ~ 450 WLCSP15 1.56 x 1.56 x 0.5 mm IP4357CX17 SD 2.0 High attenuation at 800 MHz ~ 190 WLCSP17 1.1 x 2.4 x 0.61 mm IP4251CZ12-6-TTL SD 2.0 High attenuation at 800 MHz ~ 300 DFN2514-12 (SOT1167) 2.5 x 1.35 x 0.53 mm IP4252CZ12-6-TTL SD 2.0 Low pass band insertion loss ~ 300 DFN2514-12 (SOT1167) 2.5 x 1.35 x 0.53 mm 5 2 GND 3 www.nxp.com/products/esd_emi_and_signal_conditioning/application_specific_esd_and_esd_emi_solutions/ sd_sim_card_and_mmc_esd_protection_and_emi_filter/ 14 Mobile brochure GND Further products: Mobile phone SIM card protection PESD5V0V4Ux product family }U nidirectional quadruple ESD protection diode arrays } Small SMD plastic packages and DFN plastic packages } Line capacitance of 12 pF / 15 pF (typ.) DAT0 AUX1 AUX2 D1 D+ SD Memory Card DAT1 DAT1 DAT0 CLK CMD schematic diagram A3 100 C1 RST VCC(VSD) Optional electrical Card Detect Pull-up resistors 10 kΩ – 100 kΩ A1 Key product for SIM card protection with USB connection pins: IP4365CX11 }O ffering exceptional EMI filtering and ESD protection while adding additional connector pins for use with USB } 3-channel SIM card interface integrated RC-filter array } Additional protection diodes for internal USB connection protection } Integrated 100 Ω/100 Ω/47 Ω series channel resistors integrated }D ownstream ESD protection up to ±15 kV (contact), exceeding IEC 61000-4-2, level 4 }W afer-level chip-scale package with 0.4 mm pitch to simplify design and save space IP4252CZ16 – Application diagram GND VCC GND Integrated, small-sized solutions to protect SD- and micro SD-cards SD-memory card communication is based on an 8-/9-pin interface (clock, command, 1- or 4-bit data and 2/3 power/GND lines). host interface Choose one of the many devices that offer three digital lines and an additional protection for the supply rail SD card interface – ESD protection and EMI filter 4 bra228 Download Application Note on SD(HD)memory card and MMC interface cond. More details about NXP SIM and SD card solutions www.nxp.com/documents/application_note/AN10911.pdf Mobile brochure 15 Charger interfaces Wireless charging Low RDSon is key In the conventional charger circuit, a ‘battery MOSFET’ is used to disconnect the battery, e.g. in case of temperature violation, excessive (dis-)charge currents or over-/ under-voltage conditions. A low RDSon value is important in this MOSFET to minimize losses. Battery MOSFET in smart phones Switch-mode battery charger Battery MOSFET e.g. PMPB15XP Battery voltage detection Key product: PMPB15XP – 12 V single P-ch MOSFET } Very low RDSon of 15 mΩ at VGS = 4.5 V } Housed in a 0.65 mm flat, small 2 x 2 mm DFN2020MD-6 package with tin-plated solderable side pads MOSFETs are also used in the pass element of chargers, which isolates the USB Vbus line from the internal supply (“USB OTG Vbus protection”). Here, a double MOSFET in back-to-back configuration can be used. Key products in DFN2020-6 (SOT1118) a 0.65 mm flat, 2 x 2 mm leadless package Phone supply Multi-Standard wireless charging pad Battery current detection In the charger pad MOSFETs drive a current through the windings of a copper coil to transmit inductive energy to the phone. In the phone itself either dedicated integrated circuits or MOSFETs are used for synchronous rectification behind the receiver coil. Additional Schottky diodes can enhance the efficiency of the rectifier. PMDPB58UPE Q1 Q2 VBUS PMU GND Key products: GND }Offering best-in-class thermal performance due to extra heat sink PMDP58UPE – Dual P-ch ESD protected MOSFET } ESD protected MOSFET of > 2 kV HBM } Very low RDSon of <58 mΩ at VGS = 4.5 V } 1.8 V RDSon rating for operation at low voltage gate drive levels Free the phone from the cable, allow simpler charging – With highly efficient small-sized MOSFETs and Schottky rectifers – Today’s smart phones tend to provide limited operating time. Wireless charging is highly convenient and straightforward: just place the phone on a charger pad integrated into a desk or work surface (e.g. in the office, at home, or in a coffee shop). Very efficient low RDSon MOSFETs in a 2 x 2 mm DFN2020 package with tin-plated solderable side pads PMDPB70XP – 30 V Dual P-ch MOSFET } Very low RDSon of 70 mΩ at Type number VDS (V) RDSon typ (mΩ) @ VGS = 4.5 V Package N-ch, single 20 12 DFN2020MD-6 DFN2020MD-6 PMPB15XN N-ch, single 20 15 N-ch, dual, ESD protected 20 85 DFN2020-6 PMPB16XN N-ch, single 30 16 DFN2020MD-6 PMPB40SNA N-ch, single 60 40 DFN2020MD-6 PMPB33XP P-ch, single 20 33 DFN2020MD-6 PMPB48EP P-ch, single 30 43 DFN2020MD-6 PMDPB85UPE VGS = 4.5 V Polarity and configuration PMPB12UN Surge protection in Charger interfaces Very efficient low VF and IR Schottky diodes in ultra small packages with tin-plated solderable side pads Type number Protect the battery with strong TVS and Zener diodes Smart phones with large displays usually come with high capacitance batteries to provide sufficient operating time for the user. For a reasonable charging time, these phones typically use dedicated charger ICs in combination with over-voltage protection circuits. While these circuits can disconnect the battery in case of a permanent over-voltage condition, they can be sensitive to surge events. To protect against this, a TVS diode is placed at the Vbus line of the USB connector. In addition, a Zener or ESD protection diode can be placed in parallel to the battery to protect it against short duration over-voltage spikes. IF max (A) VR max (V) VF max (mV) @ IF max IR max (mA) @VR max Optimization Package 0.5 20 410 0.3 low VF DFN1608D-2 PMEG2010EPK 1 20 415 0.6 low VF DFN1608D-2 PMEG2015EPK 1.5 20 420 0.9 low VF DFN1608D-2 PMEG2020EPK 2 20 450 0.9 low VF DFN1608D-2 PMEG4005EPK. 0.5 40 590 0.01 low IR DFN1608D-2 PMEG4010EPK 1 40 600 0.02 low IR DFN1608D-2 PMEG4015EPK 1.5 40 610 0.03 low IR DFN1608D-2 PMEG4020EPK 2 40 660 0.03 low IR DFN1608D-2 PMEG2010BELD 1 20 490 0.2 low VF DFN1006D-2 PMEG3005BELD 0.5 30 500 0.5 low VF DFN1006D-2 PMEG2005EPK Key products: Wireless Charging Application } PTVS12VS1UR, 12 V, 400 W unidirectional Transient Voltage Suppressor (TVS) in a SOD123W FlatPower package (2.6 x 1.7 x 1 mm) } PTVS26VS1UR, 16 V, 400 W unidirectional Transient Voltage Suppressor (TVS) in a SOD123W FlatPower package (2.6 x 1.7 x 1 mm) } BZX884-C5V6, 16 V, Low-power voltage regulator diode in an ultra small DFN1006-2 plastic package } TDZ5V6J: 5.6 V General-purpose Zener diode in a SOD323F very small and flat lead plastic package Download application Vbus /+5V TVS diode over-voltage protection circuit power management unit Zener diode Vbat Charger station GND www.nxp.com/documents/application_note/AN10910.pdf 16 Read more about Wireless Charging of Mobile Devices data Micro USB 1 power note about how to protect a mobile device charger Mobile brochure Mobile phone www.nxp.com/news/whats-cooking-in-rd/wireless-charging.html Mobile brochure 17 (SOT617) 5.0 x 5.0 x 1.0 DFN5050-32 (SOT873-1) 3.3 x 3.3 x 1.0 DFN3333-8 (SOT1220) 2.0 x 2.0 x 0.62 DFN2020MD-6 (SOT1061) 2.0 x 2.0 x 0.62 DFN2020-3 Download the application guide for LDOs & DC-to-DC buck converter for power management solutions in portable devices www.nxp.com/documents/brochure/939775017406.pdf The largest supplier of discrete leadless packages (SOT1168) 3.3 x 1.35 x 0.53 DFN3314-16 (SOT985) 3.3 x 1.35 x 0.48 DFN3314U-16 (SOT1159) 3.3 x 1.2 x 0.48 DFN3312-16 (SOT1167) 2.5 x 1.35 x 0.53 DFN2514-12 (SOT984) 2.5 x 1.35 x 0.48 DFN2514U-12 (SOT1158) 2.5 x 1.2 x 0.48 DFN2512-12 (SOT1197) 2.6 x 2.6 x 0.48 DFN2626-10 (SOT1333) 2.5 x 2.0 x 0.48 DFN2520-9 (SOT1176) 2.5 x 1.0 x 0.48 DFN2510A-10 DFN2110-9 DFN1712-8 (SOT1157) 1.7 x 1.2 x 0.48 (SOT983) 1.7 x 1.35 x 0.48 DFN1714U-8 (SOT1166) 1.7 x 1.35 x 0.52 DFN1714-8 (SOT1178) 2.1 x 1.0 x 0.48 (SOT1118) 2.0 x 2.0 x 0.62 DFN2020-6 (SOT1189) 1.6 x 1.6 x 0.48 DFN1616-6 (SOT886) 1.45 x 1.0 x 0.48 (SOT1194) 1.0 x 1.0 x 0.52 DFN1010C-4 (SOT1202) 1.0 x 1.0 x 0.33 DFN1010E-6 (SOT1216) 1.0 x 1.0 x 0.37 DFN1010B-6 (SOT891) 1.0 x 1.0 x 0.48 DFN1010-6 DFN1410-6 (SOD1608) 1.6 x 0.8 x 0.37 DFN1608D-2 (SOT1215) 1.1 x 1.0 x 0.37 DFN1010D-3 (SOD882) 1.0 x 0.6 x 0.48 (SOT883) 1.0 x 0.6 x 0.48 DFN1006-2 DFN1006-3 (SOT883B) 1.0 x 0.6 x 0.37 (SOD962) 0.6 x 0.3 x 0.3 DSN0603-2* (SOD882D) 1.0 x 0.6 x 0.37 DFN1006D-2 DFN1006B-3 4 - 6 Pins Medium power suited for mobile devices. Check out these documents to learn more: 8 - 10 Pins 2 - 3 Pins Ultra small NXP also offers a broad range of power management and logic solutions ideally Download the leaflet about SD 3.0 signal conditioners IP4755CZ24 and IP4855CX25 www.nxp.com/documents/leaflet/939775017446.pdf Download the AXP Logic family leaflet. Advanced, extremely-low voltage and power logic solutions – designed for portable applications: www.nxp.com/documents/leaflet/75017461.pdf Selection Guides – Catalog pdf versions to download Discrete Semiconductors Selection Guide www.nxp.com/discrete_selection_guide General Purpose Logic solutions www.nxp.com/documents/brochure/75017351.pdf Contact to sales offices and distributors Dedicated and skilled sales and distribution teams provide support on a regional level: http://www.nxp.com/profile/sales Download NXP App – free app for iPhone, iPad, iPod Touch or Android This free NXP application allows engineers to search, buy and share more than 10,000 products parts from NXP‘s product portfolio on your iPhone, iPad and iPod Touch or Android: http://www.nxp.com/news/mobile-app.html 12 - 32 Pins Our extensive Discrete Flat No-leads portfolio *Discrete Silicon No-leads Document order number: 9397 750 17441 Support material Mobile brochure 19