Small-signal MOSFET Selection Guide Broad selection of small-signal MOSFETs for a wide range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today´s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety of packages, from the larger SOT223 to the ultra small DFN1006B-3, the ultimate in miniaturization. Key features New leadless package innovation – DFN2020MD-6 } Voltage range: 12 to 300 V NXP has developed a new 2 x 2 mm leadless package with the } Package sizes: 1 x 0.6 to 5 x 6 mm unique feature of 100% tin-plated, solderable side pads. } RDSon as low as 10 mΩ The concept is based on galvanic plating. These solderable } Leadless packages with 100% solderable side pads side pads enable visual inspection of solder joints, and allow } ESD-protected devices up to 3 kV HBM for tighter contact onto the PCB. The package saves cost in production by eliminating the need for x-ray solder inspection. Key applications } Power management } Charging circuits NXP package 100% solderable side pads Packages from other suppliers } Power switches (motors, fans, etc.) } LED drivers } LCD backlighting Key benefits } New AEC-Q101 qualified types } New ultra-small leadless package DFN1006B-3 } New 2 x 2 mm leadless package with high Ptot capability to replace significantly larger packages like SO8 100% solder wetting solution with new 2 x 2 mm leadless package DFN2020MD-6 } Optimal visual solder inspection } High-quality solder connections } No complete wetting on side pad }Q uality of solder connection difficult to determine }V ery limited options for optical solder inspection Thermal capability comparison Power dissipation per package based on different 4-layer PCB conditions 3000 PD [mW] 2500 PD on 1 cm2 solder land 2000 1500 1000 PD on standard footprint 500 Package name Footprint size (mm) SOT457 DFN2020-6 SOT1118 DFN2020MD-6/DFN2020-3 SOT1220/SOT1061 SOT89 2.9 x 2.8 x 1.1 2 x 2 x 0.6 2 x 2 x 0.6 4.5 x 4 x 1.5 For more information please visit our website: http://www.nxp.com/campaigns/ultra-small-mosfets http://www.nxp.com/news/news-archive/2012/DFN2020-with-solderable-side-pads.html Small-signal MOSFETs in new DFN2020MD-6 (SOT1220) single package DFN2020MD-6 (SOT1220) Package Size (mm) 2.0 x 2.0 x 0.65 P tot (mW) >1500 Polarity VDS (V) VGS (V) Nch Nch Nch Nch Nch Nch Nch Nch Nch Nch Nch Nch Pch Pch Pch Pch Pch Pch Pch Pch Pch 20 20 20 20 20 30 30 30 30 30 30 60 12 20 20 20 20 20 30 30 30 8 8 12 12 12 12 12 12 12 20 20 16 12 12 12 12 12 12 12 20 20 ID (A) 8.5 VGS(th) VGS(th) min (V) max (V) 1.1 2.2 ton typ (ns) 24 toff typ (ns) 11 ESD QG typ protection (nC) (kV) 7.2 2 2 2 2 2 2 2 - RDSon typ (mΩ) @ VGS = 10 V 4.5 V 16 12 20 10 15 23 16 13 29 33 11 20 40 15 19 33 20 29 43 47 27 48 2.5 V 1.8 V PMPB12UN* PMPB20UN* PMPB10XNE* PMPB15XN* PMPB23XNE* PMPB16XN* PMPB13XNE* PMPB29XNE* PMPB33XN* PMPB11EN* PMPB20EN* PMPB40SNA* PMPB15XP* PMPB19XP* PMPB33XP* PMPB20XPE* PMPB29XPE* PMPB43XPE* PMPB47XP* PMPB27XP* PMPB48EP* Small-signal MOSFET –Schottky combination DFN2020-6 (SOT1118) Package Size (mm) 2.0 x 2.0 x 0.65 P tot (mW) >500 Configuration Single + Schottky VDS (V) VGS (V) 20 8 ID (A) ESD VGS(th) VGS(th) ton typ toff typ QG typ protection min (V) max (V) (ns) (ns) (nC) (kV) IF (A) VR (V) VF typ. (mA) RDSon typ (mΩ) @ VGS = 4.5 V 2.5 V 1.8 V 3.3 0.5 1.5 15 92 4.5 1 2 30 455 58 72 100 3.3 0.5 1.5 15 92 4.5 1 2.2 30 325 58 72 100 PMFPB6545UP 3 1 2.2 30 325 80 PMFPB8045XP* 3 1 2.2 30 325 80 PMFPB8032XP* PMFPB6532UP * Products to be released in 2012 VDS max (V) VGS max (V) ID max (A) VGSth min (V) VGSth max (V) RDSon max @ VGS = 4.5 V (mΩ) RDSon max @ VGS = 2.5 V (mΩ) DFN2020-6 (SOT1118) Channel type PMC85XP Package Type number Small-signal MOSFET – NPN transistor combination P-ch MOSFET Channel type NPN RET 30 VCEO max (V) 50 12 VEBO max (V) 10 3.4 Io max (A) 0.1 0.45 VI (off) typ (V) 0.6 1 VI (on) typ (V) 0.9 110 hFE typ 100 140 VCEsat max (V) 0.1 Features and benefits `` Trench MOSFET technology `` NPN transistor built-in bias resistors `` Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm `` Exposed drain pad for excellent thermal conduction Applications `` Charging switch for portable devices `` High-side load switch `` USB port overvoltage protection `` Power management in battery-driven portables `` Hard disk and computing power management A p-channel MOSFET as main switch combined with a driver bipolar transistor including resistors, in one package for use in e.g. VBUS protection switches. Scalable and flexible discrete solutions built on NXP's broad packaging and technology portfolio. VGSth max (V) 0.50 0.45 0.50 0.50 0.45 0.60 0.50 1.00 1.00 0.45 0.50 0.45 0.45 0.50 1.00 1.00 0.50 0.45 0.50 0.60 0.45 0.50 0.80 1.00 1.00 0.95 0.95 1.5 1.05 0.95 1.1 1.5 3 2.5 0.95 1.5 0.95 0.95 1.5 3 2.5 0.95 1 1.5 1.1 1 1.5 1.5 2.5 2.5 SOT666 1.6 x 1.2 x 0.55 NX3020NAKV* 30 20 yes 0.18 0.80 1.5 PMF280UN PMF63UN PMF290XN NX3008NBKW PMF400UN PMF250XN PMF370XN PMF77XN PMF87EN NX3020NAKW* BSH121 BSS138BKW 2N7002BKW 2N7002PW BSS138PW NX7002AKW 20 20 20 30 30 30 30 30 30 30 55 60 60 60 60 60 8 8 12 8 8 12 12 12 20 20 8 20 20 20 20 20 2 yes 1.5 2 yes 1.02 1.9 1 0.35 0.83 0.9 0.87 1.63 1.95 0.18 0.3 0.32 0.31 0.31 0.32 0.17 0.45 0.40 0.50 0.60 0.45 0.50 0.35 0.50 1.00 0.80 0.40 0.48 1.00 1.00 0.90 1.10 1 1 1.5 1.1 1 1.5 1.5 2.5 1.5 1.3 1.6 2.5 2.5 1.5 2.1 SOT323 2.0 x 1.25 x 0.95 PMG45UN 20 8 - 2.8 0.40 1 55 76 SOT363 2.0 x 1.25 x 0.95 PMGD280UN 20 8 - 0.87 0.45 1 340 PMG370XN 30 12 - 0.96 0.50 1.5 440 PMV65UN PMV170UN* BSH105 PMV16UN PMV28UN PMV185XN* PMV30XN NX3008NBK BSH103 PMV20XN PMV90EN BSH108 NX3020NAK* PMV22EN PMV37EN PMV45EN BSN20 BSH111 BSS138BK 2N7002BK 2N7002P BSS138P NX7002AK 2N7002 BST82 BSH114 BSS123 PMV213SN PMN25UN PMN15UN PMN34UN PMN22XN PMN25EN PMN20EN PMN35EN 20 20 20 20 20 20 20 30 30 30 30 30 30 30 30 30 50 55 60 60 60 60 60 60 100 100 100 100 20 30 30 30 30 30 30 8 8 8 8 8 12 12 8 8 12 20 20 20 20 20 20 20 10 20 20 20 20 20 30 20 20 20 30 8 8 8 12 20 20 20 2 yes 1.5 2 yes - 2 1.4 1.05 5.8 3.3 1.3 3.2 0.4 0.85 4.8 2.1 1.9 0.2 5.2 3.1 5.4 0.173 0.335 0.36 0.35 0.36 0.36 0.19 0.3 0.19 0.85 0.15 1.9 6 8 4.9 5.7 6.2 6.7 5.1 0.40 0.40 0.40 0.40 0.40 0.50 0.50 0.60 0.40 0.50 1.00 1.00 0.80 1.00 1.00 1.00 0.40 0.40 0.48 1.00 1.00 0.90 1.10 1.00 1.00 2.00 1.00 2.00 0.40 0.40 0.45 0.50 1.00 1.00 1.00 1 1 1 1 1.5 1.5 1.1 1.5 2.5 2 1.5 2.5 2.5 2 1.8 1.3 1.6 2.5 2.5 1.5 2.1 2.5 4 2.8 4 1 1 1.5 2.5 2.5 2.5 76 188 200 18 32 220 35 1400 400 25 115 97 235 250 23 40 330 60 2100 500 35 SOT23 2.9 x 1.3 x 1.0 SOT457 2.9 x 1.5 x 1.0 SOT89 4.5 x 2.5 x 1.5 BSS87 200 20 - 0.4 0.80 2.8 * in development, release Q3/2012 4500 1600 1600 2000 2000 2000 4500 84 120 4500 22 36 42 15000 1600 1600 1600 1600 4500 5000 500 6000 250 23 20 31 3000 0.33 11 N 0.89 2.2 0.72 0.52 0.89 0.74 0.65 1.9 3.1 0.33 1 0.6 0.5 0.6 0.72 0.33 45 185 34 34 43 50 37 170 135 11 17 42 33 30 38 11 N N N Y N N N N N N N Y Y Y Y N 2.2 184 N 430 0.89 45 N 650 0.65 37 N 2.5 185 3.9 7.4 5.8 152 670 470 4.9 0.52 2.1 6.4 2.6 6.4 0.33 8.6 6.5 9.4 1 0.6 0.5 0.6 0.72 0.33 4.6 7 6.4 9 9.9 6.4 9.6 12.4 6.2 420 34 83 585 132 190 11 480 330 350 17 17 42 33 30 38 11 31 25 138 23 330 470 845 790 585 492 630 334 N N N N N N N Y N N N N N N N N N N Y Y Y Y N N N N N N N N N N N N N - 100 N 380 350 380 490 490 1400 460 1650 620 450 550 750 590 2100 680 1100 650 300 340 1000 460 420 1600 400 520 1100 560 650 380 340 350 1400 480 440 5200 620 430 550 2100 580 650 1300 760 2800 600 1400 1100 2800 5200 80 4500 1600 1600 1600 1600 4500 N N N N N N N N N N N N N N N Y Y N N Y N N N Y Y RDSon max @ VGS = 1.8 V (mΩ) SOT416 1.6 x 0.8 x 0.77 900 1600 2000 55 45 34 52 43 34 37 23 33 45 34 43 43 37 23 33 55 45 34 34 43 37 11 33 30 RDSon max @ VGS = 2.5 V (mΩ) DFN1006-3 1.0 x 0.6 x 0.5 940 1600 0.45 0.89 0.72 0.77 0.75 0.52 0.65 1.05 0.5 0.89 0.72 0.89 0.89 0.65 1.05 0.5 0.45 0.89 0.72 0.52 0.89 0.65 0.33 0.5 0.6 RDSon max @ VGS = 4.5 V (mΩ) DFN1006B-3 1.0 x 0.6 x 0.37 Automotive qualified VGSth min (V) 1 1 1 0.9 0.9 0.53 0.93 0.65 0.45 2.28 2.15 0.48 1.78 1.87 1.22 0.45 0.7 0.98 0.97 0.35 0.8 0.84 0.18 0.29 0.31 Ciss typ (pF) ID max (A) 2 1 2 2 2 2 2 yes 2 - QG(tot) typ (nC) ESD HBM (kV) 8 8 12 8 8 8 12 20 20 8 12 8 8 12 20 20 8 8 12 8 8 12 20 20 20 RDSon max @ VGS = 5 V (mΩ) VGS max (V) 20 20 20 30 30 30 30 60 60 20 20 30 30 30 60 60 20 20 20 30 30 30 30 60 60 RDSon max @ VGS = 10 V (mΩ) VDS max (V) PMZB290UNE PMZB290UN PMZB300XN PMZB370UNE PMZB420UN NX3008NBKMB PMZB380XN PMZB790SN 2N7002BKMB PMZ250UN PMZ270XN PMZ1000UN PMZ390UN PMZ350XN PMZ760SN 2N7002BKM PMR290UNE PMR280UN PMR290XN NX3008NBKT PMR400UN PMR370XN NX3020NAKT* 2N7002BKT 2N7002PT Package name and dimensions (mm) Type number Single N-channel MOSFETs 2000 2000 2000 5200 140 20000 2000 2000 2000 5200 10000 340 74 350 1400 480 300 440 97 110 5200 4000 2200 96 550 2100 580 540 650 142 660 162 2800 830 5000 6500 125 156 335 40 65 2800 600 5200 29 47 54 4000 2200 5000 6500 5300 27 18 46 27 31 25 43 35 23 54 37 58 36 21 29 30 100 150 235 950 250 90 2500 5000 5000 6000 50 150 80 250 10000 26 36 200 270 1000 7500 7500 10000 Automotive qualified 2.5 2.5 2.8 2.8 2 4 2 2 2.7 2.7 4 4 2 2 2 2 Ciss typ (pF) RDSon max @ VGS = 10 V (mΩ) 1.00 1.00 1.00 1.00 1.00 2.00 1.00 1.00 1.30 1.30 1.00 2.00 2.00 0.40 0.80 0.80 0.80 QG(tot) typ (nC) VGSth max (V) 7.4 6 10 6 5.5 5.5 7.5 3.5 1.8 0.9 0.52 3.5 6.5 0.55 0.375 0.375 0.35 RDSon max @ VGS = 1.8 V (mΩ) VGSth min (V) yes 2 yes - RDSon max @ VGS = 2.5 V (mΩ) ID max (A) 20 20 20 20 13 13 13 16 20 20 20 20 20 20 20 20 20 RDSon max @ VGS = 4.5 V (mΩ) ESD HBM (kV) 30 30 30 30 55 55 55 100 100 100 100 100 100 200 240 250 300 RDSon max @ VGS = 5 V (mΩ) VGS max (V) PMT21EN PMT29EN BSP030 BSP100 PHT6N06LT PHT6N06T PHT8N06LT PHT4NQ10LT SOT223 PMT200EN* PMT760EN* 6.5 x 3.5 x 1.65 BSP110 PHT4NQ10T PHT6NQ10T BSP122 BSP89 BSP126 BSP130 * in development, release Q3/2012 VDS max (V) Type number Package name and dimensions (mm) Single N-channel MOSFETs 12.5 9.6 24 6 4.5 6 11.2 6.8 7.4 2.4 7.4 21 - 588 492 770 250 250 190 500 374 314 108 25 300 633 100 100 100 100 N N N N N N N N N N N N N N N N N 0.45 0.95 447 645 940 1.3 127 N 0.68 0.50 1.3 850 1500 2800 0.76 58 N NX3008PBKMB 30 8 2 0.3 0.60 1.1 4100 6500 0.55 31 N BSS84AKMB 50 20 1 0.23 1.10 2.1 7500 8500 0.26 24 N BSS84AKM 50 20 1 0.23 1.10 2.1 7500 8500 0.26 24 Y PMR670UPE 20 8 2 0.48 0.50 1.3 850 1500 0.76 58 Y NX3008PBKT 30 8 2 0.2 0.60 1.1 4100 6500 0.55 31 Y BSS84AKT 50 20 1 0.15 1.10 2.1 0.26 24 Y PMF170XP 20 12 - 1 0.65 1.15 200 300 2.6 280 N NX3008PBKW 30 8 2 0.2 0.60 1.1 4100 6500 0.55 31 Y BSS84AKW 50 20 1 0.15 1.10 2.1 0.26 24 Y PMG85XP 20 12 - 2 0.65 1.15 4.8 560 N BSH205 PMV33UPE PMV160UP NX2301P PMV32UP PMV75UP* PMV48XP PMV65XP NX3008PBK BSH203 BSH202 BSS84AK BSH201 BSH207 PMN40UPE* PMN27UP PMN34UP PMN27XPE* PMN42XPE* PMN70XPE* PMN80XP PMN48XP 12 20 20 20 20 20 20 20 30 30 30 50 60 12 20 20 20 20 20 20 20 20 8 8 8 8 8 12 12 12 8 8 20 20 20 8 8 8 8 12 12 12 12 12 2 2 1 4 2 2 2 - 0.75 5.3 1.2 2 4 2.2 3.5 3.9 0.23 0.47 0.52 0.18 0.3 1.52 6 5.7 5 5.7 4.5 4.1 3.2 4.1 0.40 0.45 0.45 0.50 0.45 0.47 0.75 0.55 0.60 0.40 1.00 1.10 1.00 0.40 0.45 0.45 0.45 0.75 0.75 0.75 0.45 0.75 0.95 0.95 1.1 0.95 0.9 1.25 0.95 1.1 2.1 0.95 0.95 0.95 1.25 1.25 1.25 1 1.25 900 7500 2500 3.8 14.7 3.3 4.5 15.5 6.7 8.5 7.6 0.55 2.2 2.9 0.26 3 8.8 15.6 21 15.5 15 11.5 5.2 5 8.7 200 1820 365 380 1890 560 1000 725 31 110 80 24 70 500 1820 2340 1950 1770 1410 602 550 1000 N N N Y N N N N Y N N Y N N N N N N N N N N BSS192 240 20 - 0.2 0.80 2.8 12000 - 55 N BSP250 30 20 - 3 1.00 2.8 250 - 250 N BSP220 200 20 - 0.225 0.80 2.8 12000 - 65 N BSP225 250 20 - 0.225 0.80 2.8 15000 - 65 N BSP230 300 20 - 0.21 1.95 2.8 17000 - 60 N * in development, release Q3/2012 7500 7500 RDSon max @ VGS = 1.8 V (mΩ) 1 2 RDSon max @ VGS = 2.5 V (mΩ) 2 8 RDSon max @ VGS = 4.5 V (mΩ) 8 20 RDSon max @ VGS = 5 V (mΩ) 20 PMZB670UPE RDSon max @ VGS = 10 V (mΩ) Automotive qualified SOT223 6.5 x 3.5 x 1.65 Ciss typ (pF) SOT89 4.5 x 2.5 x 1.5 QG(tot) typ (nC) SOT457 2.9 x 1.5 x 1.0 VGSth max (V) SOT23 2.9 x 1.3 x 1.0 VGSth min (V) SOT363 2.0 x 1.25 x 0.95 ID max (A) SOT323 2.0 x 1.25 x 0.95 ESD HBM (kV) SOT416 1.6 x 0.8 x 0.77 VGS max (V) DFN1006-3 1.0 x 0.6 x 0.5 VDS max (V) DFN1006B-3 1.0 x 0.6 x 0.37 PMZB350UPE Type number Package name and dimensions (mm) Single P-channel MOSFETs 2800 8500 8500 115 160 36 210 120 36 87 55 76 4100 900 500 47 270 190 46 118 81 112 6500 1100 43 32 40 30 46 85 102 55 150 55 41 48 44 64 129 125 82 65 380 270 73 145 8500 400 72 66 66 156 N SOT363 2.0 x 1.25 x 0.95 SOT666 1.6 x 1.2 x 0.55 DFN2020-6 2.0 x 2.0 x 0.65 P NX3008PBKS 30 8 2 0.2 0.60 1.1 SOT363 2.0 x 1.25 x 0.95 BSS84AKS 50 20 1 0.16 1.10 2.1 PMDT670UPE 20 8 2 0.55 0.50 1.3 SOT666 1.6 x 1.2 x 0.55 NX3008PBKV 30 8 2 0.22 0.60 1.1 BSS84AKV 50 20 1 0.17 1.10 2.1 57 4500 1600 1600 1600 1600 4500 1600 1600 7500 7500 51 70 61 53 124 165 83 123 90 75 204 550 580 2100 340 650 318 2800 2000 2200 6500 380 1400 620 2100 1100 2800 67 70 103 70 97 102 87 110 95 90 146 90 123 125 110 140 137 150 210 135 4100 6500 2000 2000 5200 2000 2000 156 8500 850 1500 4100 6500 2800 8500 Automotive qualified DFN2020-6 2.0 x 2.0 x 0.65 37 50 46 40 73 120 88 145 350 480 1400 225 440 5200 Ciss typ (pF) VGSth max (V) 1 1 1 0.9 1.5 1.5 2.5 1 1.5 1 1.1 1.5 1.5 1.5 1.5 1.6 2.5 2.5 2.1 0.95 1.1 2.5 2.5 0.95 1.5 0.95 0.9 1.25 1 1 1 QG(tot) typ (nC) VGSth min (V) 0.40 0.40 0.40 0.40 0.50 0.50 1.00 0.40 0.50 0.45 0.60 0.50 0.50 0.80 0.90 0.48 1.00 1.00 1.10 0.50 0.60 1.00 1.00 0.45 0.50 0.45 0.47 0.75 0.40 0.45 0.45 RDSon max @ VGS = 1.8 V (mΩ) ID max (A) 5.8 5.1 4.5 5.3 4 2.7 4.5 1.3 0.86 0.71 0.35 1 0.74 0.18 0.32 0.32 0.3 0.32 0.17 0.8 0.4 0.34 0.35 4.5 3.5 3.7 4.5 4.2 3.7 3.8 3.4 RDSon max @ VGS = 2.5 V (mΩ) ESD HBM (kV) 1.6 1.6 2 yes 1.5 2 yes 2 2 2 2 0.8 2 2 - RDSon max @ VGS = 4.5 V (mΩ) VGS max (V) 8 8 8 12 12 12 20 8 12 8 8 12 12 20 20 20 20 20 20 8 8 20 20 8 8 8 12 12 12 12 12 RDSon max @ VGS = 5 V (mΩ) VDS max (V) 20 20 20 20 30 30 30 20 20 30 30 30 30 30 60 60 60 60 60 20 30 60 60 20 20 20 20 20 20 30 30 RDSon max @ VGS = 10 V (mΩ) channel type PMDPB28UN PMDPB42UN PMDPB38UNE* PMDPB30XN* PMDPB56XN PMDPB95XNE* PMDPB70EN PMGD130UN PMGD290XN PMGD400UN NX3008NBKS PMGD175XN PMGD370XN NX3020NAKS* BSS138PS BSS138BKS 2N7002BKS 2N7002PS NX7002AKS PMDT290UNE NX3008NBKV 2N7002BKV 2N7002PV PMDPB58UPE PMDPB65UP PMDPB85UPE PMDPB55XP PMDPB70XPE PMDPB80XP PMDPB70XP PMC85XP Type number Package name Dual MOSFETs 3.1 2 2.9 14.4 1.9 265 185 268 660 170 3 0.88 0.72 0.89 0.52 0.7 0.65 0.33 0.72 0.6 0.5 0.6 0.33 0.45 0.52 0.5 0.6 6.3 4.5 5.4 16.5 5 5.7 5.2 5.2 130 83 34 43 34 75 37 11 38 42 33 30 11 55 34 33 30 804 380 514 785 600 550 680 680 N N N N N N N N N N Y N N N Y Y Y Y N Y Y Y Y N N N N N N N N 0.55 31 Y 0.26 24 Y 0.76 58 Y 0.55 31 Y 0.26 24 Y * in development, release Q3/2012 RDSon max @ VGS = 10 V (mΩ) RDSon max @ VGS = 5 V (mΩ) 20 20 8 8 8 8 2 1 2 2 2 2 0.33 0.17 0.4 0.22 0.8 0.55 1.1 1.1 0.6 0.6 0.5 0.5 2.1 2.1 1.1 1.1 0.95 1.3 1600 7500 2000 8500 N 30 8 2 0.35 0.6 P 30 8 2 0.2 N 20 12 - P 20 12 - 2800 1100 2800 Y Y Y Y Y Y 1.1 1400 2100 2800 0.52 34 Y 0.6 1.1 4100 6500 0.55 31 Y 5.3 0.4 0.9 40 53 75 14.4 660 N 4.5 0.47 0.9 70 90 135 16.5 785 N RDSon max @ VGS = 1.8 V (mΩ) 2100 6500 620 1500 33 24 34 31 55 58 RDSon max @ VGS = 2.5 V (mΩ) 1400 4100 380 850 0.5 0.26 0.52 0.55 0.45 0.76 RDSon max @ VGS = 4.5 V (mΩ) Automotive qualified VGSth max (V) 60 50 30 30 20 20 Ciss typ (pF) VGSth min (V) N P N P N P QG(tot) typ (nC) ID max (A) DFN2020-6 2.0 x 2.0 x 0.65 ESD HBM (kV) TSSOP6 2.0 x 1.25 x 0.95 PMDT290UCE VGS max (V) NX3008CBKV SOT666 1.6 x 1.2 x 0.55 VDS max (V) NX1029X channel type Type number Package name Complementary types NX3008CBKS PMCPB5530X* * in development, release Q3/2012 www.nxp.com © 2012 NXP Semiconductors N.V. 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