UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)<1.5Ω @ VGS=10V * Single Pulse Avalanche Energy Rated * Rugged- SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UF830L-TA3-T UF830G-TA3-T TO-220 UF830L-TF3-T UF830G-TF3-T TO-220F UF830L-TF1-T UF830G-TF1-T TO-220F1 UF830L-TF2-T UF830G-TF2-T TO-220F2 UF830L-TM3-T UF830G-TM3-T TO-251 UF830L-TMS-T UF830G-TMS-T TO-251S UF830L-TN3-R UF830G-TN3-R TO-252 UF830L-T2Q-T UF830G-T2Q-T TO-262 UF830L-TQ2-R UF830G-TQ2-R TO-263 UF830L-TQ2-T UF830G-TQ2-T TO-263 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube Tape Reel Tube Tape Reel Tube 1 of 9 QW-R502-046.I UF830 Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 9 QW-R502-046.I UF830 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless Otherwise Specified.) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage (TJ=25°C ~125°C) VDS 500 V Drain to Gate Voltage (RGS=20kΩ, TJ=25°C ~125°C) VDGR 500 V Gate to Source Voltage VGS ±30 V Continuous ID 4.5 A Drain Current Pulsed IDM 18 A TO-220/TO-262/TO-263 73 W TO-220F/ TO-220F1 38 W Power Dissipation PD TO-220F2 40 (TC = 25°C) TO-251/TO-251S 46 W TO-252 Single Pulse Avalanche Energy Rating (Note 2) EAS 300 mJ Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. VDD=50V, starting TJ =25°C, L=25mH, RG=25Ω, peak IAS=4.5A THERMAL DATA PARAMETER TO-220/TO-262/TO-263 TO-220F/ TO-220F1 Junction to Ambient TO-220F2 TO-251/TO-251S TO-252 TO-220/TO-262/TO-263 TO-220F/ TO-220F1 Junction to Case TO-220F2 TO-251/TO-251S TO-252 SYMBOL θJA θJc RATINGS 62.5 62.5 62.5 UNIT °C/W °C/W 100.3 °C/W 1.71 3.31 3.125 °C/W °C/W 2.7 °C/W ELECTRICAL SPECIFICATIONS (TA =25°C, unless otherwise specified.) PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage On-State Drain Current (Note 1) Drain-Source Leakage Current SYMBOL BVDSS VGS(TH) ID(ON) IDSS TEST CONDITIONS ID=250μA, VGS=0V VGS=VDS, ID=250μA VDS>ID(ON)×RDS(ON)MAX, VGS=10V VDS= Rated BVDSS, VGS=0V VDS=0.8×Rated BVDSS VGS=0V, TJ= 125°C VGS=±30V ID=2.5A, VGS=10V (Note 2) VDS≥10V, ID=2.7A MIN 500 2.0 4.5 Gate-Source Leakage Current IGSS Static Drain-Source On-State Resistance RDS(ON) Forward Transconductance (Note 1) gFS 2.5 Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD=250V, ID≈4.5A RGS=12Ω, RL =54Ω (Note 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%. 2. MOSFET Switching Times are Essentially Independent of Operating Temperature. 3. Gate Charge is Essentially Independent of Operating Temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT V 4.0 V A 25 μA 1.3 4.2 10 15 33 16 250 μA ±100 1.5 nA Ω S ns ns ns ns 17 23 53 23 3 of 9 QW-R502-046.I UF830 Power MOSFET ELECTRICAL SPECIFICATIONS(Cont.) (TA =25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN Total Gate Charge QG VGS=10V, ID=4.5A VDS=0.8×Rated BVDSS Gate-Source Charge QGS I G(REF)=1.5mA (Note 3) Gate-Drain Charge QGD Input Capacitance CISS VDS=25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%. 2. MOSFET Switching Times are Essentially Independent of Operating Temperature. 3. Gate Charge is Essentially Independent of Operating Temperature. INTERNAL PACKAGE INDUCTANCE PARAMETER SYMBOL Internal Drain Inductance Measured from the contact screw on tab to center of die LD Measured from the drain lead(6mm from package) to center of die Internal Source Inductance Measured from the source lead(6mm from header) to source bond pad LS Remark: Modified MOSFET symbol showing the internal devices inductances as below. TYP MAX UNIT 22 32 nC 3.5 nC 11 nC 600 pF 100 pF 20 pF MIN TYP MAX UNIT 3.5 4.5 nH nH 7.5 nH SOURCE TO DRAIN DIODE SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN Source to Drain Diode Voltage VSD TJ=25°C,ISD=4.5A, VGS=0V(Note 1) Continuous Source to Drain Current ISD Note 2 Pulse Source to Drain Current ISDM Reverse Recovery Time trr TJ=25°C, ISD=4.5A, dI/dt=100A/μs 180 Reverse Recovery Charge QRR TJ=25°C, ISD=4.5A, dI/dt=100A/μs 0.96 Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%. 2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP 350 2.2 MAX UNIT 1.6 V 5.5 A 18 A 760 ns 4.3 μC 4 of 9 QW-R502-046.I UF830 Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS L Vary tP to Obtain Required Peak IAS + RG VDD VGS DUT 0V tp IAS 0.01Ω Unclamped Energy Test Circuit Unclamped Energy Waveforms RL + RG VDD DUT VGS Switching Time Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 9 QW-R502-046.I UF830 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) tON tOFF tDLY(ON) tDLY(OFF) tR VDS tF 90% 90% 10% 0 10% 90% VGS 0 50% 10% PULSE WIDTH 50% Resistive Switching Waveforms Gate Charge Test Circuit Gate Charge Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 9 QW-R502-046.I UF830 Power MOSFET TYPICAL CHARACTERISTICS Normalized Power Dissipation vs. Case Temperature 1.2 Maximum Contionuous Drain Current vs. Case Temperature 5 1.0 4 0.8 3 0.6 2 0.4 1 0.2 0 0 150 100 50 Case Temperature, TC (°C) 0 Normalized Maximum Transient Thermal Impedance 25 50 75 100 125 Case Temperature,TC (°C) 150 Forward Bias Safe Operating Area 100 Operation in This Region is Limited by rDS (on) 1 0.5 10 0.2 0.1 0.1 0.05 PDM t1 0.02 0.01 1 t2 Single pulse *Notes: Duty Factor, D=t1/t2 Peak TJ =PDM×ZθJC×RθJC +TC 0.01 10-5 1 10-4 10-3 10-2 10-1 Rectangular Pulse Duration, t1 (s) 0.1 10 Output Characteristics 1 Pulse Duration=80μs Duty Cycle = 0.5% Max VGS=5.5V VGS=10V VGS=5.5V 3 2 VGS=4.5V 2 VGS=10V VGS=5.0V Pulse Duration=80μs Duty Cycle = 0.5% Max 3 103 4 VGS=5.0V 4 10 102 Drain to Source Voltage, VDS (V) Saturation Characteristics 5 6 5 TC=25°C TJ=Max Rated Single Pulse 10 μs 10 0μ s 1m 10 s ms 10 0m s DC VGS=4.5V 1 1 VGS=4.0V 0 0 50 100 150 200 250 300 Drain to Source Voltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw VGS=4.0V 0 0 4 2 6 8 Drain to Source Voltage, VDS (V) 10 7 of 9 QW-R502-046.I UF830 Power MOSFET TYPICAL CHARACTERISTICS (Cont.) Drain to Source on Resistance vs. Gate Voltage and Drain Current Transfer Characteristics Drain to Source on Resistance, rDS (ON) (Ω) Drain to Source Current, IDS (ON) (A) 5 Pulse Duration=80μs Duty Cycle = 0.5% Max 4 VDS>ID(ON)×rDS(ON)MAX 3 TJ = 125°C 2 TJ = 25°C 1 TJ = -40°C 0 2 1 0 3 4 5 6 7 10 Pulse Duration=80μs Duty Cycle = 0.5% Max 8 6 VGS=10V 4 VGS=20V 2 0 0 4 2.2 Normalized Drain to Source on Resistance vs. Junction Temperature Pulse Duration=80μs Duty Cycle = 0.5% Max 1.8 VGS =10V, ID=2.5A 1.4 1.0 0.6 0.2 -60 -40 -20 0 20 40 60 1.05 0.95 0.85 Transconductance, gFS (S) Capacitance, C (pF) 1200 CISS COSS 400 CRSS 50 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 20 40 60 80 100 120 140 160 Transconductance vs. Drain Current 5 VGS=0V, f=1MHz CISS=CGS+CGD C =C 1600 RSS GD COSS=CDS+CGS 20 30 30 10 Drain to Source Voltage, VDS (V) 0 Junction Temperature, TJ (°C) Capacitance vs. Drain to Source Voltage 1 20 16 1.15 0.75 -40 -20 80 100 120 140 2000 0 12 Normalized Drain to Source Breakdown Voltage vs. Junction Temperature 1.25 ID=250μA Junction Temperature, TJ (°C) 800 8 Case Temperature, TC (°C) Normalized Drain to Source Breakdown Voltage Normalized Drain to Source on Resistance Gate to Source Voltage, VGS (V) Pulse Duration=80μs Duty Cycle = 0.5% Max TJ= -40°C 4 TJ= 25°C 3 TJ= 125°C 2 1 0 0 1 2 3 4 5 Drain Current, ID (A) 8 of 9 QW-R502-046.I UF830 Power MOSFET TYPICAL CHARACTERISTICS (Cont.) Gate to Source Voltage vs. Gate Charge Source to Drain Diode Voltage 20 Pulse Duration=80μs 100 Duty Cycle = 0.5% Max Gate to Source Voltage, VGS (V) Source to Drain Current, ISD (A) 2 5 2 TJ=125°C 10 TJ=25°C 5 2 1 0 1 2 3 4 Source to Drain Voltage, VSD (V) ID=4.5A 15 VDS=100V VDS=250V 10 VDS=400V 5 0 0 8 24 16 Gate Charge, QG (nC) 32 40 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 9 of 9 QW-R502-046.I