UNISONIC TECHNOLOGIES CO., LTD UF830-F Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON) <1.5Ω @ VGS=10V, ID=2.5A * Single Pulse Avalanche Energy Rated * Rugged- SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UF830L-TA3-T UF830G-TA3-T TO-220 UF830L-TF3-T UF830G-TF3-T TO-220F UF830L-TMS-T UF830G-TMS-T TO-251S UF830L-TN3-R UF830G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-A94.B UF830-F Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless Otherwise Specified.) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage (TJ=25°C ~125°C) VDS 500 V Drain to Gate Voltage (RGS=20kΩ, TJ=25°C ~125°C) VDGR 500 V Gate to Source Voltage VGS ±30 V Continuous ID 4.5 A Drain Current Pulsed IDM 18 A TO-220 73 W Power Dissipation (TC = 25°C) PD TO-220F 38 W TO-251S/TO-252 46 W Single Pulse Avalanche Energy Rating (Note 2) EAS 300 mJ Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. VDD=50V, starting TJ =25°C, L=25mH, RG=25Ω, peak IAS=4.5A THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220 TO-220F TO-251S/TO-252 TO-220 TO-220F TO-251S/TO-252 θJA θJC RATINGS 62.5 62.5 100.3 1.71 3.31 2.7 UNIT °C/W °C/W °C/W °C/W °C/W °C/W ELECTRICAL SPECIFICATIONS (TA =25°C, unless otherwise specified.) PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage On-State Drain Current (Note 1) Drain-Source Leakage Current SYMBOL BVDSS VGS(TH) ID(ON) IDSS TEST CONDITIONS ID=250μA, VGS=0V VGS=VDS, ID=250μA VDS>ID(ON)×RDS(ON)MAX, VGS=10V VDS= Rated BVDSS, VGS=0V VDS=0.8×Rated BVDSS VGS=0V, TJ= 125°C VGS=±30V ID=2.5A, VGS=10V (Note 2) VDS≥10V, ID=2.7A MIN 500 2.0 4.5 Gate-Source Leakage Current IGSS Static Drain-Source On-State Resistance RDS(ON) Forward Transconductance (Note 1) gFS 2.5 Turn-On Delay Time tD(ON) VDD=30V, ID ≈ 0.5A Turn-On Rise Time tR RGS=25Ω Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%. 2. MOSFET Switching Times are Essentially Independent of Operating Temperature. 3. Gate Charge is Essentially Independent of Operating Temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT V 4.0 V A 25 μA 1.1 4.2 38 36 155 70 250 μA ±100 1.5 nA Ω S ns ns ns ns 60 50 170 90 2 of 6 QW-R502-A94.B UF830-F Power MOSFET ELECTRICAL SPECIFICATIONS(Cont.) (TA =25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN Total Gate Charge QG VGS=10V, ID=1.3A VDS=0.8×Rated BVDSS Gate-Source Charge QGS I G(REF)=100μA (Note 3) Gate-Drain Charge QGD Input Capacitance CISS VDS=25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%. 2. MOSFET Switching Times are Essentially Independent of Operating Temperature. 3. Gate Charge is Essentially Independent of Operating Temperature. INTERNAL PACKAGE INDUCTANCE PARAMETER SYMBOL Internal Drain Inductance Measured from the contact screw on tab to center of die LD Measured from the drain lead(6mm from package) to center of die Internal Source Inductance Measured from the source lead(6mm from header) to source bond pad LS Remark: Modified MOSFET symbol showing the internal devices inductances as below. TYP MAX UNIT 21 30 nC 5.2 nC 5.6 nC 600 pF 78 pF 15 pF MIN TYP MAX UNIT 3.5 4.5 nH nH 7.5 nH SOURCE TO DRAIN DIODE SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN Source to Drain Diode Voltage VSD TJ=25°C,ISD=4.5A, VGS=0V(Note 1) Continuous Source to Drain Current ISD Note 2 Pulse Source to Drain Current ISDM Reverse Recovery Time trr TJ=25°C, ISD=4.5A, dI/dt=100A/μs 180 Reverse Recovery Charge QRR TJ=25°C, ISD=4.5A, dI/dt=100A/μs 0.96 Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%. 2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP 350 2.2 MAX UNIT 1.6 V 5.5 A 18 A 760 ns 4.3 μC 3 of 6 QW-R502-A94.B UF830-F Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS L Vary tP to Obtain Required Peak IAS + RG VDD VGS DUT 0V tp IAS 0.01Ω Unclamped Energy Test Circuit Unclamped Energy Waveforms RL + RG VDD DUT VGS Switching Time Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-A94.B UF830-F Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) tON tOFF tDLY(ON) tDLY(OFF) tR VDS tF 90% 90% 10% 0 10% 90% VGS 0 50% 10% PULSE WIDTH 50% Resistive Switching Waveforms Gate Charge Test Circuit Gate Charge Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-A94.B UF830-F Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-A94.B