UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness SYMBOL www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-061.Z 4N60 Power MOSFET ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 4N60L-TA3-T 4N60G-TA3-T TO-220 4N60L-TF1-T 4N60G-TF1-T TO-220F1 4N60L-TF2-T 4N60G-TF2-T TO-220F2 4N60L-TF3-T 4N60G-TF3-T TO-220F 4N60L-TF3T-T 4N60G-TF3T-T TO-220F3 4N60L-TM3-T 4N60G-TM3-T TO-251 4N60L-TMS-T 4N60G-TMS-T TO-251S 4N60L-TN3-R 4N60G-TN3-R TO-252 4N60L-TND-R 4N60G-TND-R TO-252D 4N60L-T2Q-T 4N60G-T2Q-T TO-262 4N60L-TQ2-T 4N60G-TQ2-T TO-263 4N60L-TQ2-R 4N60G-TQ2-R TO-263 4N60G-K08-5060-R DFN-8(5×6) Note: Pin Assignment: G: Gate D: Drain S: Source 1 G G G G G G G G G G G G S 2 D D D D D D D D D D D D S Pin Assignment 3 4 5 6 S S S S S S S S S S S S S G D D 7 D 8 D Packing Tube Tube Tube Tube Tube Tube Tube Tape Reel Tape Reel Tube Tube Tape Reel Tape Reel MARKING PACKAGE TO-220 TO-251S TO-220F TO-252 TO-220F1 TO-252D TO-220F2 TO-262 TO-220F3 TO-263 TO-251 MARKING DFN-8(5×6) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 9 QW-R502-061.Z 4N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 4.4 A 4.0 A Continuous ID Drain Current Pulsed (Note 2) IDM 16 A 260 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 10.6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-262/TO-263 106 TO-220F/TO-220F1 36 TO-220F3 Power Dissipation TO-220F2 PD 38 W TO-251/TO-251S 50 TO-252/TO-252D DFN-8(5×6) 30 Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case PACKAGE TO-220/TO-262/TO-263 TO-220F/TO-220F1 TO-220F2/TO-220F3 TO-251/TO-251S TO-252/TO-252D DFN-8(5×6) TO-220/TO-262/TO-263 TO-220F/TO-220F1 TO-220F3 TO-220F2 TO-251/TO-251S TO-252/TO-252D DFN-8(5×6) SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS UNIT 62.5 θJA °С/W 110 75 1.18 3.47 θJC 3.28 °С/W 2.5 4.17 3 of 9 QW-R502-061.Z 4N60 Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS TEST CONDITIONS VGS = 0V, ID = 250μA VDS = 600V, VGS = 0V Drain-Source Leakage Current IDSS VDS = 480V, TC = 125°С Forward VGS = 30V, VDS = 0V Gate-Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 2.2A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, Output Capacitance COSS f = 1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD = 300V, ID = 4.0A, RG = 25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS= 480V,ID= 4.0A, Gate-Source Charge QGS VGS= 10V (Note 1, 2) Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 4.4A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0 V, IS = 4.4A, dIF/dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 600 0.6 V 10 μA 100 µA 100 nA -100 nA V/°С 1.9 4.0 2.5 V Ω 550 80 30 670 100 50 pF pF pF 35 80 160 120 80 5 20 55 110 200 150 100 ns ns ns ns nC nC nC 1.4 V 4.4 A 17.6 A 2.0 250 1.5 ns μC 4 of 9 QW-R502-061.Z 4N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 9 QW-R502-061.Z 4N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 9 QW-R502-061.Z 4N60 TYPICAL CHARACTERISTICS Drain-Source On-Resistance, RDS(ON) (Normalized) (Ω) Drain-Source Breakdown Voltage, BVDSS (Normalized) (V) Power MOSFET On-State Characteristics 10 VGS 10V 9V 8V 7V 6V 5.5V 5 V Bottorm:5.0V Transfer Characteristics 10 Top: 25°С 1 5.0V 150°С 1 0.1 Notes: 1. 250µs Pulse Test 2. TC=25°С 0.1 1 10 Drain-to-Source Voltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Notes: 1. VDS=50V 2. 250µs Pulse Test 0.1 2 4 6 8 10 Gate-Source Voltage, VGS (V) 7 of 9 QW-R502-061.Z 4N60 TYPICAL CHARACTERISTICS(Cont.) Capacitance Characteristics (Non-Repetitive) 1200 1000 12 10 Ciss 800 600 Gate Charge Characteristics Ciss=Cgs+Cgd (Cds=shorted) Coss=Cds+Cgd Crss=Cgd Coss Notes: 1. VGS=0V 2. f = 1MHz 0 0.1 VDS=120V 6 4 400 200 VDS=300V VDS=480V 8 2 Crss Note: ID=4A 0 1 0 10 5 10 15 20 25 Total Gate Charge, QG (nC) Drain-SourceVoltage, VDS (V) PD (w) Thermal Response, θJC (t) Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 9 QW-R502-061.Z 4N60 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 9 of 9 QW-R502-061.Z