Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BF1109; BF1109R; BF1109WR
N-channel dual-gate MOS-FETs
Product specification
Supersedes data of 1997 Sep 03
1997 Dec 08
NXP Semiconductors
Product specification
BF1109; BF1109R;
BF1109WR
N-channel dual-gate MOS-FETs
FEATURES
PINNING
 Short channel transistor with high
forward transfer admittance to input
capacitance ratio
PIN
DESCRIPTION
1
source
 Low noise gain controlled amplifier
up to 1 GHz
2
drain
3
gate 2
 Internal self-biasing circuit to
ensure good cross-modulation
performance during AGC and good
DC stabilization.
4
gate 1
handbook, 2 columns
3
4
2
1
Top view
MSB035
BF1109R marking code: NBp.
Fig.2
APPLICATIONS
 VHF and UHF applications with 9 V
supply voltage, such as television
tuners and professional
communications equipment.
handbook, 2 columns
4
3
Simplified outline
(SOT143R).
ok, halfpage
3
4
2
1
DESCRIPTION
Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1109,
BF1109R and BF1109WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
1
2
Top view
BF1109 marking code: NFp.
Fig.1
Top view
MSB014
MSB842
BF1109WR marking code: NB.
Simplified outline
(SOT143B).
Fig.3
Simplified outline
(SOT343R).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
drain-source voltage


11
V
ID
drain current (DC)


30
mA
Ptot
total power dissipation


200
mW
yfs
forward transfer admittance
Tamb  80 C

30

mS
Cig1-ss
input capacitance at gate 1

2.2
2.7
pF
Crss
reverse transfer capacitance
f = 1 MHz

25
40
fF
F
noise figure
f = 800 MHz

1.5
2.5
dB
Xmod
cross-modulation
input level for k = 1% at 40 dB AGC 100


dBV
Tj
operating junction temperature

150
C

CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
1997 Dec 08
2
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1109; BF1109R; BF1109WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage

11
V
ID
drain current (DC)

30
mA
IG1
gate 1 current

10
mA
IG2
gate 2 current

10
mA
Ptot
total power dissipation

200
mW
Tstg
storage temperature
65
+150
C
Tj
operating junction temperature

+150
C
Tamb  80 C; note 1
Note
1. Device mounted on a printed-circuit board.
MGM243
250
handbook, halfpage
Ptot
(mW)
200
150
100
50
0
0
40
80
120
160
Tamb (°C)
Fig.4 Power derating curve.
1997 Dec 08
3
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1109; BF1109R; BF1109WR
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient in free air
Rth j-s
thermal resistance from junction to soldering point
VALUE
note 1
UNIT
350
K/W
200
K/W
Note
1. Device mounted on a printed-circuit board.
STATIC CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VG1-S = VG2-S = 0; ID = 10 A
11

V
V(BR)G1-SS gate 1-source breakdown voltage
VG2-S = 0; IG1-S = 10 A; ID = 0
11

V
V(BR)G2-SS gate 2-source breakdown voltage
V(BR)DSS
drain-source breakdown voltage
VG1-S = VDS = 0; IG2-S = 10 A
11

V
VG2-S (th)
gate 2-source threshold voltage
VG1-S = 9 V; VDS = 9 V; ID = 20 A
0.3
1.2
V
IDSX
self-biasing drain current
VG2-S = 4 V; VDS = 9 V
8
16
mA
IG1-SS
gate 1 cut-off current
VG1-S = 9 V; VG2-S = 0; ID = 0

20
nA
IG2-SS
gate 2 cut-off current
VG1-S = VDS = 0; VG2-S = 9 V

20
nA
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 C; VG2-S = 4 V; VDS = 9 V; self-biasing current; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
yfs
forward transfer admittance
pulsed; Tj = 25 C
24
30

mS
Cig1-ss
input capacitance at gate 1
f = 1 MHz

2.2
2.7
pF
Cig2-ss
input capacitance at gate 2
f = 1 MHz

1.5

pF
Coss
output capacitance
f = 1 MHz

1.3

pF
Crss
reverse transfer capacitance f = 1 MHz

25
40
fF
F
noise figure
f = 800 MHz; YS = YS opt

1.5
2.5
dB
Gp
power gain
GS = 2 mS; BS = BS opt; GL = 0.5 mS;
BL = BL opt; f = 200 MHz; see Fig.16

38

dB
GS = 3.3 mS; BS = BS opt; GL = 1 mS;
BL = BL opt; f = 800 MHz; see Fig.17

20

dB
input level for k = 1% at 0 dB AGC;
fw = 50 MHz; funw = 60 MHz; see Fig.18
85


dBV
input level for k = 1% at 40 dB AGC;
fw = 50 MHz; funw = 60 MHz; see Fig.18
100


dBV
Xmod
cross-modulation
1997 Dec 08
4
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1109; BF1109R; BF1109WR
MDA613
25
MDA614
40
handbook, halfpage
handbook, halfpage
ID
(mA)
ID
(mA)
20
VG1 = 1.6 V
30
3.5 V
3V
VG2-S = 4 V
1.5 V
15
1.4 V
20
2.5 V
1.3 V
10
2V
1.2 V
10
1.1 V
5
1V
1.5 V
1V
0
0
2
0
4
6
8
0
10
VDS (V)
VG2-S = 4 V.
Tj = 25 C.
0.5
1
1.5
2
2.5
VG1 (V)
VDS = 9 V.
Tj = 25 C.
Fig.5 Output characteristics; typical values.
Fig.6 Transfer characteristics; typical values.
MDA615
MDA616
16
40
handbook, halfpage
handbook, halfpage
yfs
ID
(mA)
VG2-S = 4 V
(mS)
3.5 V
30
12
(1) (2) (3)
3V
8
20
(4)
4
10
2.5 V
2V
0
0
0
10
20
ID (mA)
0
30
(1) VDS = 9 V.
(2) VDS = 7 V.
VDS = 9 V.
Tj = 25 C.
Fig.7
Forward transfer admittance as a function
of drain current; typical values.
1997 Dec 08
Fig.8
5
1
2
3
4
5
VG2-S (V)
(3) VDS = 5 V.
(4) VDS = 3 V.
Drain current as a function of gate 2
voltage; typical values.
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1109; BF1109R; BF1109WR
MDA618
MDA617
16
16
handbook, halfpage
handbook, halfpage
ID
(mA)
ID
(mA)
12
12
8
8
4
4
0
0
0
2
4
6
8
10
VDS (V)
VG2-S = 4 V.
Tj = 25 C.
Fig.9
−4
−2
IG1 (μA)
0
Fig.10 Drain current as a function of gate 1 current;
typical values.
MDA619
120
handbook, halfpage
Vunw
(dBμV)
110
100
90
80
20
40
60
gain reduction (dB)
VDS = 9 V; VG2nom = 4 V; IDnom = 12 mA; fw = 50 MHz;
funw = 60 MHz; Tamb = 25 C.
Fig.11 Unwanted voltage for 1% cross-modulation
as a function of gain reduction;
typical values (see Fig.18).
1997 Dec 08
−6
VDS = 9 V; VG2-S = 4 V; Tj = 25 C.
Drain current as a function of drain-source
voltage; typical values.
0
−8
6
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1109; BF1109R; BF1109WR
MDA620
102
handbook, halfpage
MDA621
103
handbook, halfpage
yis
(mS)
−103
ϕrs
(deg)
|yrs|
(mS)
10
|yrs|
102
−102
bis
1
ϕrs
10−1
10−2
10
gis
1
10
103
102
−10
10
f (MHz)
−1
103
102
f (MHz)
VDS = 9 V; VG2-S = 4 V.
ID = 12 mA; Tamb = 25 C.
VDS = 9 V; VG2-S = 4 V.
ID = 12 mA; Tamb = 25 C.
Fig.12 Input admittance as a function of frequency;
typical values.
Fig.13 Reverse transfer admittance and phase as
a function of frequency; typical values.
MDA622
102
handbook, halfpage
|yfs|
(mS)
MDA623
−102
10
handbook, halfpage
yos
(mS)
ϕfs
(deg)
|yfs|
bos
1
−10
ϕfs
10
10−1
gos
1
10
102
f (MHz)
10−2
10
−1
103
VDS = 9 V; VG2-S = 4 V.
ID = 12 mA; Tamb = 25 C.
f (MHz)
103
VDS = 9 V; VG2-S = 4 V.
ID = 12 mA; Tamb = 25 C.
Fig.14 Forward transfer admittance and phase as
a function of frequency; typical values.
1997 Dec 08
102
Fig.15 Output admittance as a function of
frequency; typical values.
7
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1109; BF1109R; BF1109WR
VAGC
handbook, full pagewidth
VDS
1 nF
2 μH
1 nF
1 nF
1 nF
47 kΩ
1 nF
L2
G2
D
BF1109
BF1109R
BF1109WR
5.5 pF
input
50 Ω
G1
C1
L1
output
50 Ω
S
15
pF
10 pF
BB405
330 kΩ
1 nF
BB405
1 nF
330 kΩ
1 nF
Vtun input
Vtun output
MDA624
VDS = 9 V, GS = 2 mS, GL = 0.5 mS, f = 200 MHz.
L1 = 45 nH, 4 turns, internal diameter = 4 mm, 0.8 mm copper wire.
L2 = 160 nH, 3 turns, internal diameter = 8 mm, 0.8 mm copper wire; tapped at approximately half a turn from the cold side, to set GL = 0.5 mS.
C1 adjusted for GS = 2 mS.
Fig.16 Gain test circuit.
VAGC
handbook, full pagewidth
VDS
1 nF
1 nF
47 kΩ
;;;
1 nF
input
50 Ω
1 nF
L1
2 to 18 pF
G2
G1
;;;;
;;;;
L3
L2
D
BF1109
BF1109R
BF1109WR
0.5 to 3.5 pF
S
0.5 to 3.5 pF
VDS = 9 V, GS = 3.3 mS, GL = 1 mS, f = 800 MHz.
L1 = 2 cm, silvered 0.8 mm copper wire 4 mm above ground plane.
L2 = 2 cm, silvered 0.8 mm copper wire 4 mm above ground plane.
L3 = 11 turns 0.5 mm copper wire without spacing, internal diameter = 3 mm, L = approx. 200 nH.
Fig.17 Gain test circuit.
1997 Dec 08
8
1 nF
output
50 Ω
4 to 40 pF
MDA625
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1109; BF1109R; BF1109WR
VG2
handbook, full pagewidth
VDS
4.7 nF
10 kΩ
4.7 nF
10 nF
Rgen
50 Ω
47 μH
G2
D
BF1109
BF1109R
G1 BF1109WR
S
10 nF
R1 =
50 Ω
50 Ω
MDA626
Vi
Fig.18 Cross-modulation test set-up.
Table 1
f
(MHz)
Scattering parameters: VDS = 9 V; VG2-S = 4 V; ID = 12 mA
S11
MAGNITUDE
(ratio)
S21
ANGLE
(deg)
S12
S22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
50
0.995
3.71
3.013
175.0
0.000
88.2
0.998
1.8
100
0.992
7.29
3.002
170.2
0.001
83.7
0.997
3.5
200
0.984
2.967
160.7
0.002
86.2
0.995
7.0
14.3
300
0.973
21.2
2.922
151.3
0.002
83.2
0.992
10.5
400
0.961
27.9
2.869
142.0
0.003
84.1
0.990
13.9
500
0.944
34.4
2.793
132.9
0.003
85.7
0.987
17.2
600
0.926
40.8
2.730
124.1
0.003
88.4
0.985
20.5
700
0.906
46.9
2.660
1115.3
0.003
94.6
0.983
23.7
800
0.887
52.9
2.605
106.5
0.004
107.2
0.981
26.8
900
0.868
58.8
2.527
97.8
0.004
114.9
0.977
30.0
1000
0.852
64.3
2.457
89.6
0.004
129.7
0.9377
33.1
Table 2
Noise data: VDS = 9 V; VG2-S = 4 V; ID = 12 mA
opt
f
(MHz)
Fmin
(dB)
(ratio)
(deg)
Rn
()
800
1.5
0.684
40.94
40.4
1997 Dec 08
9
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1109; BF1109R; BF1109WR
PACKAGE OUTLINES
Plastic surface-mounted package; 4 leads
SOT143B
D
B
E
A
X
y
HE
v M A
e
bp
w M B
4
3
Q
A
A1
c
1
2
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
ISSUE DATE
04-11-16
06-03-16
SOT143B
1997 Dec 08
EUROPEAN
PROJECTION
10
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1109; BF1109R; BF1109WR
Plastic surface-mounted package; reverse pinning; 4 leads
D
SOT143R
B
E
A
X
y
HE
v M A
e
bp
w M B
3
4
Q
A
A1
c
2
1
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
mm
1.1
0.9
OUTLINE
VERSION
SOT143R
1997 Dec 08
A1
max
bp
b1
c
D
E
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
e
1.9
e1
HE
Lp
Q
v
w
y
1.7
2.5
2.1
0.55
0.25
0.45
0.25
0.2
0.1
0.1
REFERENCES
IEC
JEDEC
JEITA
SC-61AA
11
EUROPEAN
PROJECTION
ISSUE DATE
04-11-16
06-03-16
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1109; BF1109R; BF1109WR
Plastic surface-mounted package; reverse pinning; 4 leads
D
SOT343R
E
B
A
X
HE
y
v M A
e
3
4
Q
A
A1
c
2
w M B
1
bp
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-05-21
06-03-16
SOT343R
1997 Dec 08
EUROPEAN
PROJECTION
12
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1109; BF1109R; BF1109WR
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
Right to make changes  NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
DEFINITIONS
Product specification  The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
Suitability for use  NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
DISCLAIMERS
Limited warranty and liability  Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications  Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
1997 Dec 08
13
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1109; BF1109R; BF1109WR
Export control  This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Quick reference data  The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products  Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.
Terms and conditions of commercial sale  NXP
Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an
individual agreement is concluded only the terms and
conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license  Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
1997 Dec 08
14
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]
© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R77/02/pp15
Date of release: 1997 Dec 08