DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 04 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES DESCRIPTION High power gain NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package. Low noise figure 4 lfpage High transition frequency Gold metallization ensures excellent reliability. APPLICATIONS Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscriber equipment. PINNING PIN DESCRIPTION 1 emitter 2 base 3 emitter 4 collector 1 2 Top view 3 MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCEO collector-emitter voltage open base 15 V IC collector current (DC) 200 mA Ptot total power dissipation up to Ts = 80 C; note 1 2 W hFE DC current gain IC = 70 mA; VCE = 8 V 60 90 250 Cre feedback capacitance IC = Ic = 0; VCE = 12 V; f = 1 MHz 0.7 pF fT transition frequency IC = 70 mA; VCE = 12 V; f = 1 GHz 7 GHz GUM maximum unilateral power IC = 70 mA; VCE = 12 V; gain f = 900 MHz; Tamb = 25 C 13 dB IC = 70 mA; VCE = 12 V; f = 900 MHz; Tamb = 25 C 12 dB s 21 2 insertion power gain Note 1. Ts is the temperature at the soldering point of the collector pin. 1995 Sep 04 2 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCEO collector-emitter voltage open base 15 V open collector 3 V 200 mA 2 W VEBO emitter-base voltage IC collector current (DC) Ptot total power dissipation Tstg storage temperature 65 +150 C Tj junction temperature 150 C up to Ts = 80 C; note 1 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS note 1 Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin. 1995 Sep 04 3 VALUE UNIT 35 K/W NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 CHARACTERISTICS Tj = 25 C (unless otherwise specified). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage IC = 0.1 mA; IE = 0 20 V V(BR)CES collector-emitter breakdown voltage IC = 10 mA; IB = 0 15 V V(BR)EBO emitter-base breakdown voltage IE = 0.1 mA; IC = 0 3 V ICBO collector-base leakage current IE = 0; VCB = 10 V 100 nA hFE DC current gain IC = 70 mA; VCE = 8 V 60 90 250 Cre feedback capacitance IB = Ib = 0; VCE = 12 V; f = 1 MHz 0.7 pF fT transition frequency IC = 70 mA; VCE = 12 V; f = 1 GHz 7 GHz GUM maximum unilateral power gain; note 1 IC = 70 mA; VCE = 12 V; f = 900 MHz; Tamb = 25 C 13 dB IC = 70 mA; VCE = 12 V; f = 2 GHz; Tamb = 25 C 7.5 dB insertion power gain IC = 70 mA; VCE = 12 V; f = 1 GHz; Tamb = 25 C 12 dB output voltage note 2 700 mV s 21 2 Vo Notes s 21 2 dB. 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log ------------------------------------------------------- 1 – s 11 2 1 – s22 2 2. dim = 60 dB (DIN45004B); Vp = Vo; Vq = Vo 6 dB; Vr = Vo 6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz; measured at f(p+q-r) = 793.25 MHz. 1995 Sep 04 4 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 MGC791 MRA749 250 3.0 Ptot (W) 2.5 handbook, halfpage hFE 200 2.0 150 1.5 100 1.0 50 0.5 0 10−2 0 0 50 100 150 Ts (oC) 200 10−1 1 10 IC (mA) 102 VCE = 12 V. Fig.3 Fig.2 Power derating curve. DC current gain as a function of collector current, typical values. MGC793 MGC792 handbook,1.2 halfpage 8 handbook, halfpage fT (GHz) C re (pF) 6 0.8 4 0.4 2 0 0 4 8 12 0 16 1 VCB (V) IC = 0; f = 1 MHz. Fig.4 1995 Sep 04 10 IC (mA) 10 2 f = 1 GHz; VCE = 12 V. Feedback capacitance as a function of collector-base voltage, typical values. Fig.5 5 Transition frequency as a function of collector current, typical values. NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 MGC795 25 MGC794 10 handbook, halfpage handbook, halfpage gain (dB) gain (dB) 20 Gmax 8 GUM 15 6 Gmax GUM 10 4 5 2 0 0 0 40 80 IC (mA) 120 0 f = 900 MHz; VCE = 12 V. Fig.6 Gain as a function of collector current; typical values. Fig.7 MGC796 50 gain (dB) G UM MSG 30 20 G max 10 0 10 10 2 10 3 f (MHz) 10 4 IC = 70 mA; VCE = 12 V. Fig.8 1995 Sep 04 80 IC (mA) 120 f = 2 GHz; VCE = 12 V. handbook, halfpage 40 40 Gain as a function of frequency; typical values. 6 Gain as a function of collector current; typical values. NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 MGC797 −20 dim (dB) −30 −20 d2 (dB) −30 −40 −40 −50 −50 −60 −60 handbook, halfpage −70 0 40 80 IC (mA) −70 120 1995 Sep 04 0 40 80 IC (mA) 120 VCE = 12 V; Vo = 316 mV; f(p+q) = 810 MHz. VCE = 12 V; Vo = 700 mV; f(p+q-r) = 793.25 MHz. Fig.9 MGC798 handbook, halfpage Intermodulation distortion as a function of collector current; typical values. Fig.10 Second order Intermodulation distortion as a function of collector current; typical values. 7 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 3 GHz 0.6 0.2 0.4 5 0.2 180 o 0.2 0 0.5 1 2 5 40 MHz 0.2 0.5 2 135 o 0o 0 5 45 o 1 MGC799 1.0 90 o VCE = 12 V; IC = 70 mA; Zo = 50 Fig.11 Common emitter input reflection coefficient (s11); typical values. 90 o handbook, full pagewidth 135 o 45 o 40 MHz 180 o 3 GHz 50 40 30 20 0o 10 135 o 45 o 90 o MGC800 VCE = 12 V; IC = 70 mA. Fig.12 Common emitter forward transmission coefficient (s21); typical values. 1995 Sep 04 8 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 90 o handbook, full pagewidth 135 o 45 o 3 GHz 180 o 0.5 0.4 0.3 0.2 0.1 40 MHz 0o 135 o 45 o 90 o MGC801 VCE = 12 V; IC = 70 mA. Fig.13 Common emitter reverse transmission coefficient (s12); typical values. 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 0.2 3 GHz 180 o 0.2 0 0.5 1 2 5 0o 0 40 MHz 5 0.2 0.5 2 135 o 45 o 1 MGC802 1.0 90 o VCE = 12 V; IC = 70 mA; Zo = 50 Fig.14 Common emitter output reflection coefficient (s22); typical values. 1995 Sep 04 9 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 SPICE parameters for the BFG591 crystal SEQUENCE No. PARAMETER VALUE UNIT 1 IS 1.341 fA 2 BF 123.5 3 NF .988 m 4 VAF 75.85 V 5 IKF 9.656 A 6 ISE 232.2 fA 7 NE 2.134 8 BR 10.22 9 NR 1.016 10 VAR 1.992 V 11 IKR 294.1 mA 12 ISC 211.0 aA 13 NC 997.2 14 RB 5.00 15 IRB 1.000 A 16 RBM 5.00 17 RE 1.275 C cb handbook, halfpage L1 LB B L2 B' C be C' E' C Cce LE MBC964 L3 E QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/fc); fc = scaling frequency = 1 GHz. Fig.15 Package equivalent circuit SOT223. 18 RC 920.6 m 19 (1) XTB 0.000 20 (1) EG 1.110 EV 21 (1) XTI 3.000 22 CJE 3.821 pF Cbe 182 fF 23 VJE 600.0 mV Ccb 16 fF 24 MJE 348.5 m Cce 249 fF 25 TF 13.60 ps 0.025 nH XTF 71.73 L1 26 27 VTF 10.28 V 28 ITF 1.929 A 29 PTF 0.000 deg 30 CJC 1.409 pF 31 VJC 219.4 mV 32 MJC 166.5 m 33 XCJ 2.340 m 34 TR 543.7 ns (1) CJS 0.000 F 36 (1) VJS 750.0 mV (1) MJS 0.000 FC 733.2 m 35 37 38 List of components (see Fig.15) DESIGNATION Note 1. These parameters have not been extracted, the default values are shown. 1995 Sep 04 10 VALUE UNIT L2 1.19 nH L3 0.60 nH LB 1.50 nH LE 0.50 nH NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 PACKAGE OUTLINE Plastic surface-mounted package with increased heatsink; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION SOT223 1995 Sep 04 REFERENCES IEC JEDEC JEITA SC-73 11 EUROPEAN PROJECTION ISSUE DATE 04-11-10 06-03-16 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. DEFINITIONS Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. DISCLAIMERS Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 1995 Sep 04 12 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). 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Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 1995 Sep 04 13 NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2010 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/02/pp14 Date of release: 1995 Sep 04