Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
Product specification
Supersedes data of 1997 Dec 04
2000 May 23
NXP Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
FEATURES
MARKING
 High power gain
TYPE NUMBER
 Low noise figure
BFG540W
N9
 High transition frequency
BFG540W/X
N7
 Gold metallization ensures
excellent reliability.
BFG540W/XR
N8
CODE
lfpage
4
3
1
2
PINNING
APPLICATIONS
Top view
RF front end wideband applications in
the GHz range, such as analog and
digital cellular telephones, cordless
telephones (CT2, CT3, PCN, DECT,
etc.), radar detectors, pagers, satellite
television tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optic systems.
DESCRIPTION
NPN silicon planar epitaxial
transistors in 4-pin dual-emitter
SOT343N and SOT343R plastic
packages.
PIN
MBK523
DESCRIPTION
BFG540W (see Fig.1)
1
collector
2
base
3
emitter
4
emitter
Fig.1 SOT343N.
BFG540W/X (see Fig.1)
1
collector
2
emitter
3
base
4
emitter
3
halfpage
4
2
BFG540W/XR (see Fig.2)
1
collector
2
emitter
3
base
4
emitter
1
Top view
MSB842
Fig.2 SOT343R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT


20
V


15
V
VCBO
collector-base voltage
VCES
collector-emitter voltage RBE = 0
IC
collector current (DC)


120
mA
Ptot
total power dissipation
Ts  85 C


500
mW
hFE
DC current gain
IC = 40 mA; VCE = 8 V
100
120
250
Cre
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz

0.5

fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C

9

GHz
GUM
maximum unilateral
power gain
IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C

16

dB
IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C
10

dB
insertion power gain
IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C
14
15

dB
noise figure
s  opt; IC = 10 mA; VCE = 8 V; f = 2 GHz

2.1

dB
|s21
F
|2
2000 May 23
open emitter
2
pF
NXP Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter

20
V
VCES
collector-emitter voltage
RBE = 0

15
V
VEBO
emitter-base voltage
open collector

2.5
V
IC
collector current (DC)

120
mA
Ptot
total power dissipation

500
mW
Tstg
storage temperature
65
+150
C
Tj
junction temperature

175
C
Ts  85 C; see Fig.3; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
Ts  85 C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
MBG248
600
handbook, halfpage
P tot
(mW)
400
200
0
0
50
100
150
200
T s (o C)
VCE  10 V.
Fig.3 Power derating curve.
2000 May 23
3
VALUE
UNIT
180
K/W
NXP Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown
voltage
open emitter; IC = 10 A ; IE = 0
20


V
V(BR)CES
collector-emitter breakdown
voltage
RBE = 0; IC = 40 A
15


V
V(BR)EBO
emitter-base breakdown
voltage
open collector; IE = 100 A; IC = 0
2.5


V
nA
ICBO
collector cut-off current
open emitter; VCB = 8 V; IE = 0


50
hFE
DC current gain
IC = 40 mA; VCE = 8 V
100
120
250
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 C

9

Cc
collector capacitance
IE = ie = 0; VCB = 8 V; f = 1 MHz

0.9

pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz

2

pF
Cre
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz

0.5

pF
GUM
maximum unilateral power
gain; note 1
IC = 40 mA; VCE = 8 V; f = 900 MHz; 
Tamb = 25 C
16

dB

10

dB
IC = 40 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 C
GHz
|s21|2
insertion power gain
IC = 40 mA; VCE = 8 V; f = 900 MHz; 14
Tamb = 25 C
15

dB
F
noise figure
s  opt; IC = 10 mA; VCE = 8 V;
f = 900 MHz

1.3
1.8
dB
s  opt; IC = 40 mA; VCE = 8 V;
f = 900 MHz

1.9
2.4
dB
s  opt; IC = 10 mA; VCE = 8 V;
f = 2 GHz

2.1

dB
PL1
output power at 1 dB gain
compression
IC = 40 mA; VCE = 8 V; f = 900 MHz; 
RL = 50 ; Tamb = 25 C
21

dBm
ITO
third order intercept point
note 2

34

dBm
Vo
output voltage
note 3

500

mV
d2
second order intermodulation
distortion
note 4

50

dB
Notes
s 21 2
dB.
1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log ------------------------------------------------------- 1 – s 11 2   1 – s 22 2 
2. IC = 40 mA; VCE = 8 V; RL = 50 ; Tamb = 25 C;
a) fp = 900 MHz; fq = 902 MHz; measured at f(2p  q) = 898 MHz and f(2q  p) = 904 MHz.
3. dim = 60 dB (DIN45004B); Vp = Vo; Vq = Vo 6 dB; Vr = Vo 6 dB; RL = 75 ; VCE = 8 V; IC = 40 mA;
a) fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p + q  r) = 793.25 MHz.
4. IC = 40 mA; VCE = 8 V; Vo = 275 mV; RL = 75 ; Tamb = 25 C;
a) fp = 250 MHz; fq = 560 MHz; measured at f(p + q) = 810 MHz.
2000 May 23
4
NXP Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
MRA749
250
hFE
Cre
(pF)
200
0.8
150
0.6
100
0.4
50
0.2
0
10−2
MRA750
1
handbook, halfpage
handbook, halfpage
10−1
1
10
IC (mA)
0
102
0
4
VCE = 8 V.
IC = 0; f = 1 MHz.
Fig.4
Fig.5
DC current gain as a function of
collector current; typical values.
MLC044
12
handbook, halfpage
fT
(GHz)
VCE = 8 V
8
VCE = 4 V
4
0
10 1
1
10
2
I C (mA) 10
f = 1 GHz; Tamb = 25 C.
Fig.6
Transition frequency as a function of
collector current; typical values.
2000 May 23
5
8
VCB (V)
12
Feedback capacitance as a function of
collector-base voltage; typical values.
NXP Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
MLC045
30
MLC046
30
handbook, halfpage
handbook, halfpage
gain
gain
(dB)
(dB)
20
20
MSG
G max
G UM
10
G max
G UM
10
0
0
0
10
20
50
40
I C (mA)
30
0
10
f = 900 MHz; VCE = 8 V.
f = 2 GHz; VCE = 8 V.
Fig.7
Fig.8
Gain as a function of collector current;
typical values.
MLC047
50
50
40
I C (mA)
30
Gain as a function of collector current;
typical values.
MLC048
50
handbook, halfpage
handbook, halfpage
gain
(dB)
20
gain
(dB)
G UM
40
40
G UM
MSG
MSG
30
30
20
20
10
10
G max
0
G max
0
10
102
103
f (MHz)
104
10
102
103
f (MHz)
104
IC = 10 mA; VCE = 8 V.
IC = 40 mA; VCE = 8 V.
Fig.9
Fig.10 Gain as a function of frequency; typical
values.
Gain as a function of frequency; typical
values.
2000 May 23
6
NXP Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
MEA973
−20
dim
MEA972
−20
d2
handbook, halfpage
handbook, halfpage
(dB)
−30
(dB)
−30
−40
−40
−50
−50
−60
−60
−70
10
20
30
40
50
−70
10
60
IC (mA)
20
30
40
50
60
IC (mA)
Vo = 275 mV; f(p + q) = 810 MHz; VCE = 8 V; Tamb = 25 C; RL = 75 .
Vo = 500 mV; f(p + q  r) = 793.25 MHz; VCE = 8 V; Tamb = 25 C;
RL = 75 .
Fig.12 Second order intermodulation distortion as
a function of collector current; typical
values.
Fig.11 Intermodulation distortion as a function of
collector current; typical values.
MLC049
4
MRA760
5
handbook, halfpage
handbook, halfpage
Fmin
F
(dB)
f = 900 MHz
(dB)
4
1000 MHz
3
f = 2000 MHz
Gass
3
2000 MHz
20
Gass
(dB)
15
10
2
2000 MHz
1000 MHz
900 MHz
500 MHz
1
5
2
1000 MHz
900 MHz
500 MHz
1
0
1
10
I C (mA)
Fmin
0
0
102
1
10
IC (mA)
−5
102
VCE = 8 V.
VCE = 8 V.
Fig.13 Minimum noise figure as a function of
collector current; typical values.
Fig.14 Associated available gain as a function of
collector current; typical values.
2000 May 23
7
NXP Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
MLC050
4
MRA761
5
handbook, halfpage
handbook, halfpage
Fmin
F
(dB)
IC = 10 mA
(dB)
4
I C = 40 mA
40 mA
20
Gass
(dB)
15
Gass
3
10 mA
3
10
2
5
2
40 mA
1
1
0
10 2
10 3
f (MHz)
0
102
10 4
VCE = 8 V.
Fmin
0
103
f (MHz)
−5
104
VCE = 8 V.
Fig.15 Minimum noise figure as a function of
frequency; typical values.
2000 May 23
10 mA
Fig.16 Associated available gain as a function of
frequency; typical values.
8
NXP Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
handbook, full pagewidth
90 o
stability
circle
1.0
1
135 o
45 o
2
0.5
0.8
0.6
unstable
region
0.2
0.4
5
F min = 1.3 dB
Γ opt
180 o
0.2
0
0.5
1
0.2
2
5
0o
0
F = 1.5 dB
F = 2 dB
0.2
5
F = 3 dB
0.5
2
135 o
45 o
1
MLC051
1.0
90 o
f = 900 MHz; VCE = 8 V; IC = 10 mA; Zo = 50 
Fig.17 Common emitter noise figure circles; typical values.
90 o
handbook, full pagewidth
1.0
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
0.2
180 o
0.2
0
0.5
Γ opt
1
2
5
0o
F min = 2.1 dB
0
G max = 9.8 dB G = 9 dB
G = 8 dB
0.2
5
F = 1.5 dB
F = 3 dB
F = 4 dB
0.5
2
135 o
45 o
1
MLC052
90 o
f = 2 GHz; VCE = 8 V; IC = 10 mA; Zo = 50 
Fig.18 Common emitter noise figure circles; typical values.
2000 May 23
9
1.0
NXP Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
90 o
handbook, full pagewidth
1.0
1
135 o
45 o
2
0.5
0.8
0.6
3 GHz
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
0.2
5
40 MHz
0.5
2
135 o
0o
0
5
45 o
1
MLC053
1.0
90 o
VCE = 8 V; IC = 40 mA; Zo = 50 .
Fig.19 Common emitter input reflection coefficient (s11); typical values.
90 o
handbook, full pagewidth
135
o
45
o
40 MHz
180 o
3 GHz
50
40
135
30
20
0o
10
o
45
90 o
o
MLC054
VCE = 8 V; IC = 40 mA.
Fig.20 Common emitter forward transmission coefficient (s21); typical values.
2000 May 23
10
NXP Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
90 o
handbook, full pagewidth
3 GHz
135 o
180 o
0.25
45 o
40 MHz
0.20
0.15
0.10
0o
0.05
135 o
45 o
90 o
MLC055
VCE = 8 V; IC = 40 mA.
Fig.21 Common emitter reverse transmission coefficient (s12); typical values.
90 o
handbook, full pagewidth
1.0
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
5
0o
0
3 GHz
40 MHz
0.2
0.5
2
135 o
5
45 o
1
MLC056
1.0
90 o
VCE = 8 V; IC = 40 mAZo = 50 
Fig.22 Common emitter output reflection coefficient (s22); typical values.
2000 May 23
11
NXP Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
SPICE parameters for the BFG540W crystal
SEQUENCE No.
PARAMETER
VALUE
UNIT
SEQUENCE No.
1
IS
1.045
fA
36
(1)
2
BF
184.3

37
(1)
3
NF
0.981

38
PARAMETER
VALUE
UNIT
VJS
750.0
MJS
0.000

FC
0.814

mV
4
VAF
41.69
V
Note
5
IKF
10.00
A
6
ISE
232.4
fA
1. These parameters have not been extracted, the
default values are shown.
7
NE
2.028

8
BR
43.99

9
NR
0.992

10
VAR
2.097
V
11
IKR
166.2
mA
12
ISC
129.8
aA
13
NC
1.064

14
RB
5.000

15
IRB
1.000
A
16
RBM
5.000

17
RE
353.5
m
RC
1.340

XTB
0.000

18
19
(1)
C cb
handbook, halfpage
L1
B
LB
L2
B'
C be
C'
C
E'
Cce
LE
MBC964
L3
E
20 (1)
EG
1.110
eV
21 (1)
XTI
3.000

22
CJE
1.978
pF
23
VJE
600.0
mV
24
MJE
0.332

25
TF
7.457
ps
26
XTF
11.40

27
VTF
3.158
V
28
ITF
156.9
mA
Cbe
70
fF
29
PTF
0.000
deg
Ccb
50
fF
115
fF
QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/fc)
fc = scaling frequency = 1 GHz.
Fig.23 Package equivalent circuit SOT343N;
SOT343R.
List of components (see Fig.23).
DESIGNATION
VALUE
UNIT
30
CJC
793.7
fF
Cce
31
VJC
185.5
mV
L1
0.34
nH
32
MJC
0.084

L2
0.10
nH
XCJC
0.150

L3
0.25
nH
TR
1.598
ns
LB
0.40
nH
CJS
0.000
F
LE
0.40
nH
33
34
35
(1)
2000 May 23
12
NXP Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
PACKAGE OUTLINES
Plastic surface-mounted package; 4 leads
SOT343N
D
E
B
A
X
HE
y
v M A
e
4
3
Q
A
A1
c
1
2
b1
bp
w M B
Lp
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-05-21
06-03-16
SOT343N
2000 May 23
EUROPEAN
PROJECTION
13
NXP Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
Plastic surface-mounted package; reverse pinning; 4 leads
D
SOT343R
E
B
A
X
HE
y
v M A
e
3
4
Q
A
A1
c
2
w M B
1
bp
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-05-21
06-03-16
SOT343R
2000 May 23
EUROPEAN
PROJECTION
14
NXP Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
Right to make changes  NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
DEFINITIONS
Product specification  The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
Suitability for use  NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
DISCLAIMERS
Limited warranty and liability  Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications  Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
2000 May 23
15
NXP Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
Export control  This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Quick reference data  The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products  Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.
Terms and conditions of commercial sale  NXP
Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an
individual agreement is concluded only the terms and
conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license  Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
2000 May 23
16
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]
© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R77/04/pp17
Date of release: 2000 May 23