DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 04 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package. • Low noise figure 4 fpage • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscriber equipment. PINNING PIN DESCRIPTION 1 emitter 2 base 3 emitter 4 collector 1 2 Top view 3 MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 20 V VCEO collector-emitter voltage open base − − 15 V IC collector current (DC) − − 200 mA Ptot total power dissipation up to Ts = 80 °C; note 1 − − 2 W hFE DC current gain IC = 70 mA; VCE = 8 V 60 90 250 Cre feedback capacitance IC = Ic = 0; VCE = 12 V; f = 1 MHz − 0.7 − fT transition frequency IC = 70 mA; VCE = 12 V; f = 1 GHz − 7 − GHz GUM maximum unilateral power gain IC = 70 mA; VCE = 12 V; f = 900 MHz; Tamb = 25 °C − 13 − dB insertion power gain IC = 70 mA; VCE = 12 V; f = 900 MHz; Tamb = 25 °C − 12 − dB s 21 2 Note 1. Ts is the temperature at the soldering point of the collector pin. 1995 Sep 04 2 pF Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 200 mA Ptot total power dissipation − 2 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C up to Ts = 80 °C; note 1 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS note 1 Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin. 1995 Sep 04 3 VALUE UNIT 35 K/W Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 CHARACTERISTICS Tj = 25 °C (unless otherwise specified). SYMBOL PARAMETER CONDITIONS MIN. − TYP. − MAX. UNIT V(BR)CBO collector-base breakdown voltage IC = 0.1 mA; IE = 0 V(BR)CES collector-emitter breakdown voltage IC = 10 mA; IB = 0 − − 15 V V(BR)EBO emitter-base breakdown voltage IE = 0.1 mA; IC = 0 − − 3 V ICBO collector-base leakage current IE = 0; VCB = 10 V − − 100 nA hFE DC current gain IC = 70 mA; VCE = 8 V 60 90 250 Cre feedback capacitance IB = Ib = 0; VCE = 12 V; f = 1 MHz − 0.7 − pF fT transition frequency IC = 70 mA; VCE = 12 V; f = 1 GHz − 7 − GHz GUM maximum unilateral power gain; note 1 IC = 70 mA; VCE = 12 V; f = 900 MHz; Tamb = 25 °C − 13 − dB IC = 70 mA; VCE = 12 V; f = 2 GHz; Tamb = 25 °C − 7.5 − dB insertion power gain IC = 70 mA; VCE = 12 V; f = 1 GHz; Tamb = 25 °C − 12 − dB output voltage note 2 − 700 − mV s 21 2 Vo Notes 20 V s 21 2 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -----------------------------------------------------------dB. 2 ( 1 – s 11 ) ( 1 – s 22 2 ) 2. dim = 60 dB (DIN45004B); Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz; measured at f(p+q-r) = 793.25 MHz. 1995 Sep 04 4 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 MGC791 3.0 Ptot (W) 2.5 MRA749 250 handbook, halfpage h FE 200 2.0 150 1.5 100 1.0 50 0.5 0 0 50 100 150 Ts (oC) 0 10 2 200 10 1 1 10 IC (mA) 10 2 VCE = 12 V. Fig.3 Fig.2 Power derating curve. DC current gain as a function of collector current, typical values. MGC792 handbook,1.2 halfpage MGC793 8 handbook, halfpage fT (GHz) C re (pF) 6 0.8 4 0.4 2 0 0 4 8 12 0 16 1 VCB (V) 1995 Sep 04 I C IC = 0; f = 1 MHz. Fig.4 10 (mA) 10 2 f = 1 GHz; VCE = 12 V. Feedback capacitance as a function of collector-base voltage, typical values. Fig.5 5 Transition frequency as a function of collector current, typical values. Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 MGC795 25 MGC794 10 handbook, halfpage handbook, halfpage gain (dB) gain (dB) 20 Gmax 8 GUM 15 6 Gmax GUM 10 4 5 2 0 0 0 40 80 IC (mA) 120 0 f = 900 MHz; VCE = 12 V. Fig.6 Gain as a function of collector current; typical values. Fig.7 MGC796 50 gain (dB) G UM MSG 30 20 G max 10 0 102 10 103 f (MHz) 104 IC = 70 mA; VCE = 12 V. Fig.8 1995 Sep 04 80 IC (mA) 120 f = 2 GHz; VCE = 12 V. handbook, halfpage 40 40 Gain as a function of frequency; typical values. 6 Gain as a function of collector current; typical values. Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 MGC797 −20 handbook, halfpage dim (dB) d2 (dB) −30 −30 −40 −40 −50 −50 −60 −60 −70 0 40 80 IC (mA) −70 120 1995 Sep 04 0 40 80 IC (mA) 120 VCE = 12 V; Vo = 316 mV; f(p+q) = 810 MHz. VCE = 12 V; Vo = 700 mV; f(p+q-r) = 793.25 MHz. Fig.9 MGC798 −20 handbook, halfpage Intermodulation distortion as a function of collector current; typical values. Fig.10 Second order Intermodulation distortion as a function of collector current; typical values. 7 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 3 GHz 0.6 0.2 0.4 5 0.2 180 o 0.2 0 0.5 1 2 5 40 MHz 0.2 0.5 2 135 o 0o 0 5 45 o 1 MGC799 1.0 90 o VCE = 12 V; IC = 70 mA; Zo = 50 Ω. Fig.11 Common emitter input reflection coefficient (s11); typical values. 90 o handbook, full pagewidth 135 o 45 o 40 MHz 180 o 3 GHz 50 40 30 20 0o 10 135 o 45 o 90 o MGC800 VCE = 12 V; IC = 70 mA. Fig.12 Common emitter forward transmission coefficient (s21); typical values. 1995 Sep 04 8 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 90 o handbook, full pagewidth 135 o 45 o 3 GHz 180 o 0.5 0.4 0.3 0.2 0.1 40 MHz 0o 135 o 45 o 90 o MGC801 VCE = 12 V; IC = 70 mA. Fig.13 Common emitter reverse transmission coefficient (s12); typical values. 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 0.2 3 GHz 180 o 0.2 0 0.5 1 2 5 0o 0 40 MHz 5 0.2 0.5 2 135 o 45 o 1 MGC802 1.0 90 o VCE = 12 V; IC = 70 mA; Zo = 50 Ω. Fig.14 Common emitter output reflection coefficient (s22); typical values. 1995 Sep 04 9 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 SPICE parameters for the BFG591 crystal SEQUENCE No. PARAMETER VALUE UNIT 1 IS 1.341 fA 2 BF 123.5 − 3 NF .988 m 4 VAF 75.85 V 5 IKF 9.656 A 6 ISE 232.2 fA 7 NE 2.134 − 8 BR 10.22 − 9 NR 1.016 − 10 VAR 1.992 V 11 IKR 294.1 mA 12 ISC 211.0 aA 13 NC 997.2 − 14 RB 5.00 Ω 15 IRB 1.000 µA 16 RBM 5.00 Ω 17 RE 1.275 Ω 18 RC 920.6 mΩ 19 (1) XTB 0.000 − (1) EG 1.110 EV 21 (1) XTI 3.000 − 22 CJE 3.821 pF 23 VJE 600.0 mV 24 MJE 348.5 m 25 TF 13.60 ps 26 XTF 71.73 − 27 VTF 10.28 V 20 L1 LB B L2 B' C be C' E' C Cce LE MBC964 L3 E QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc); fc = scaling frequency = 1 GHz. Fig.15 Package equivalent circuit SOT223. List of components (see Fig.15) DESIGNATION fF Ccb 16 fF Cce 249 fF L1 0.025 nH L2 1.19 nH L3 0.60 nH 1.50 nH 0.50 nH ITF 1.929 A 29 PTF 0.000 deg LE 30 CJC 1.409 pF 31 VJC 219.4 mV 32 MJC 166.5 m 33 XCJ 2.340 m 34 TR 543.7 ns 35 (1) CJS 0.000 F 36 (1) VJS 750.0 mV 37 (1) MJS 0.000 − 38 FC 733.2 m 1. These parameters have not been extracted, the default values are shown. 10 UNIT 182 28 Note VALUE Cbe LB 1995 Sep 04 C cb handbook, halfpage Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 PACKAGE OUTLINE 0.95 0.85 handbook, full pagewidth S 0.1 S seating plane 6.7 6.3 0.32 0.24 B 3.1 2.9 0.2 M A 4 A 0.10 0.01 16 o max 16 3.7 3.3 7.3 6.7 o 1 2 3 o 1.80 max 10 max 0.80 0.60 2.3 4.6 Dimensions in mm. Fig.16 SOT223. 1995 Sep 04 11 0.1 M B (4x) MSA035 - 1 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Sep 04 12