PHILIPS BFG591

DISCRETE SEMICONDUCTORS
DATA SHEET
BFG591
NPN 7 GHz wideband transistor
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
1995 Sep 04
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
FEATURES
DESCRIPTION
• High power gain
NPN silicon planar epitaxial transistor
in a plastic, 4-pin SOT223 package.
• Low noise figure
4
fpage
• High transition frequency
• Gold metallization ensures
excellent reliability.
APPLICATIONS
Intended for applications in the GHz
range such as MATV or CATV
amplifiers and RF communications
subscriber equipment.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
1
2
Top view
3
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
20
V
VCEO
collector-emitter voltage
open base
−
−
15
V
IC
collector current (DC)
−
−
200
mA
Ptot
total power dissipation
up to Ts = 80 °C; note 1
−
−
2
W
hFE
DC current gain
IC = 70 mA; VCE = 8 V
60
90
250
Cre
feedback capacitance
IC = Ic = 0; VCE = 12 V; f = 1 MHz
−
0.7
−
fT
transition frequency
IC = 70 mA; VCE = 12 V; f = 1 GHz
−
7
−
GHz
GUM
maximum unilateral
power gain
IC = 70 mA; VCE = 12 V;
f = 900 MHz; Tamb = 25 °C
−
13
−
dB
insertion power gain
IC = 70 mA; VCE = 12 V;
f = 900 MHz; Tamb = 25 °C
−
12
−
dB
s 21
2
Note
1. Ts is the temperature at the soldering point of the collector pin.
1995 Sep 04
2
pF
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
200
mA
Ptot
total power dissipation
−
2
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
up to Ts = 80 °C; note 1
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
note 1
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.
1995 Sep 04
3
VALUE
UNIT
35
K/W
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
CHARACTERISTICS
Tj = 25 °C (unless otherwise specified).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
TYP.
−
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
IC = 0.1 mA; IE = 0
V(BR)CES
collector-emitter breakdown voltage
IC = 10 mA; IB = 0
−
−
15
V
V(BR)EBO
emitter-base breakdown voltage
IE = 0.1 mA; IC = 0
−
−
3
V
ICBO
collector-base leakage current
IE = 0; VCB = 10 V
−
−
100
nA
hFE
DC current gain
IC = 70 mA; VCE = 8 V
60
90
250
Cre
feedback capacitance
IB = Ib = 0; VCE = 12 V;
f = 1 MHz
−
0.7
−
pF
fT
transition frequency
IC = 70 mA; VCE = 12 V;
f = 1 GHz
−
7
−
GHz
GUM
maximum unilateral power gain;
note 1
IC = 70 mA; VCE = 12 V;
f = 900 MHz; Tamb = 25 °C
−
13
−
dB
IC = 70 mA; VCE = 12 V;
f = 2 GHz; Tamb = 25 °C
−
7.5
−
dB
insertion power gain
IC = 70 mA; VCE = 12 V;
f = 1 GHz; Tamb = 25 °C
−
12
−
dB
output voltage
note 2
−
700
−
mV
s 21
2
Vo
Notes
20
V
s 21 2
1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -----------------------------------------------------------dB.
2
( 1 – s 11 ) ( 1 – s 22 2 )
2. dim = 60 dB (DIN45004B);
Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz; measured at f(p+q-r) = 793.25 MHz.
1995 Sep 04
4
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
MGC791
3.0
Ptot
(W)
2.5
MRA749
250
handbook, halfpage
h FE
200
2.0
150
1.5
100
1.0
50
0.5
0
0
50
100
150
Ts (oC)
0
10 2
200
10 1
1
10
IC (mA)
10 2
VCE = 12 V.
Fig.3
Fig.2 Power derating curve.
DC current gain as a function of collector
current, typical values.
MGC792
handbook,1.2
halfpage
MGC793
8
handbook, halfpage
fT
(GHz)
C re
(pF)
6
0.8
4
0.4
2
0
0
4
8
12
0
16
1
VCB (V)
1995 Sep 04
I
C
IC = 0; f = 1 MHz.
Fig.4
10
(mA)
10 2
f = 1 GHz; VCE = 12 V.
Feedback capacitance as a function of
collector-base voltage, typical values.
Fig.5
5
Transition frequency as a function of
collector current, typical values.
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
MGC795
25
MGC794
10
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
20
Gmax
8
GUM
15
6
Gmax
GUM
10
4
5
2
0
0
0
40
80
IC (mA)
120
0
f = 900 MHz; VCE = 12 V.
Fig.6
Gain as a function of collector current;
typical values.
Fig.7
MGC796
50
gain
(dB)
G UM
MSG
30
20
G max
10
0
102
10
103
f (MHz)
104
IC = 70 mA; VCE = 12 V.
Fig.8
1995 Sep 04
80
IC (mA)
120
f = 2 GHz; VCE = 12 V.
handbook, halfpage
40
40
Gain as a function of frequency;
typical values.
6
Gain as a function of collector current;
typical values.
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
MGC797
−20
handbook, halfpage
dim
(dB)
d2
(dB)
−30
−30
−40
−40
−50
−50
−60
−60
−70
0
40
80
IC (mA)
−70
120
1995 Sep 04
0
40
80
IC (mA)
120
VCE = 12 V; Vo = 316 mV; f(p+q) = 810 MHz.
VCE = 12 V; Vo = 700 mV; f(p+q-r) = 793.25 MHz.
Fig.9
MGC798
−20
handbook, halfpage
Intermodulation distortion as a function
of collector current; typical values.
Fig.10 Second order Intermodulation distortion as
a function of collector current; typical values.
7
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
3 GHz
0.6
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
5
40 MHz
0.2
0.5
2
135 o
0o
0
5
45 o
1
MGC799
1.0
90 o
VCE = 12 V; IC = 70 mA; Zo = 50 Ω.
Fig.11 Common emitter input reflection coefficient (s11); typical values.
90 o
handbook, full pagewidth
135 o
45 o
40 MHz
180 o
3 GHz
50
40
30
20
0o
10
135 o
45 o
90 o
MGC800
VCE = 12 V; IC = 70 mA.
Fig.12 Common emitter forward transmission coefficient (s21); typical values.
1995 Sep 04
8
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
90 o
handbook, full pagewidth
135 o
45 o
3 GHz
180 o
0.5
0.4
0.3
0.2
0.1
40 MHz
0o
135 o
45 o
90 o
MGC801
VCE = 12 V; IC = 70 mA.
Fig.13 Common emitter reverse transmission coefficient (s12); typical values.
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
0.2
3 GHz
180 o
0.2
0
0.5
1
2
5
0o
0
40 MHz
5
0.2
0.5
2
135 o
45 o
1
MGC802
1.0
90 o
VCE = 12 V; IC = 70 mA; Zo = 50 Ω.
Fig.14 Common emitter output reflection coefficient (s22); typical values.
1995 Sep 04
9
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
SPICE parameters for the BFG591 crystal
SEQUENCE No.
PARAMETER
VALUE
UNIT
1
IS
1.341
fA
2
BF
123.5
−
3
NF
.988
m
4
VAF
75.85
V
5
IKF
9.656
A
6
ISE
232.2
fA
7
NE
2.134
−
8
BR
10.22
−
9
NR
1.016
−
10
VAR
1.992
V
11
IKR
294.1
mA
12
ISC
211.0
aA
13
NC
997.2
−
14
RB
5.00
Ω
15
IRB
1.000
µA
16
RBM
5.00
Ω
17
RE
1.275
Ω
18
RC
920.6
mΩ
19 (1)
XTB
0.000
−
(1)
EG
1.110
EV
21 (1)
XTI
3.000
−
22
CJE
3.821
pF
23
VJE
600.0
mV
24
MJE
348.5
m
25
TF
13.60
ps
26
XTF
71.73
−
27
VTF
10.28
V
20
L1
LB
B
L2
B'
C be
C'
E'
C
Cce
LE
MBC964
L3
E
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc);
fc = scaling frequency = 1 GHz.
Fig.15 Package equivalent circuit SOT223.
List of components (see Fig.15)
DESIGNATION
fF
Ccb
16
fF
Cce
249
fF
L1
0.025
nH
L2
1.19
nH
L3
0.60
nH
1.50
nH
0.50
nH
ITF
1.929
A
29
PTF
0.000
deg
LE
30
CJC
1.409
pF
31
VJC
219.4
mV
32
MJC
166.5
m
33
XCJ
2.340
m
34
TR
543.7
ns
35
(1)
CJS
0.000
F
36
(1)
VJS
750.0
mV
37 (1)
MJS
0.000
−
38
FC
733.2
m
1. These parameters have not been extracted, the
default values are shown.
10
UNIT
182
28
Note
VALUE
Cbe
LB
1995 Sep 04
C cb
handbook, halfpage
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
PACKAGE OUTLINE
0.95
0.85
handbook, full pagewidth
S
0.1 S
seating plane
6.7
6.3
0.32
0.24
B
3.1
2.9
0.2 M A
4
A
0.10
0.01
16 o
max
16
3.7
3.3
7.3
6.7
o
1
2
3
o
1.80
max
10
max
0.80
0.60
2.3
4.6
Dimensions in mm.
Fig.16 SOT223.
1995 Sep 04
11
0.1 M B
(4x)
MSA035 - 1
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Sep 04
12