UNISONIC TECHNOLOGIES CO., LTD UD606 Power MOSFET DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) DESCRIPTION SOP-8 The UD606 can provide excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs. The UD606 may be used in H-bridge, inverters and other applications. 1 FEATURES TO-252-5 * N-Channel: 40V/8A RDS(ON) < 33mΩ @ VGS =10V, ID=8A RDS(ON) < 55mΩ @ VGS= 4.5V, ID=6A * P-Channel: -40V/-8A RDS(ON) < 50mΩ @ VGS= -10V, ID=-8A RDS(ON) < 70mΩ @ VGS= -4.5V, ID=-4A * Super high dense cell design * Reliable and rugged SYMBOL (3) D1/D2 (5) G2 (2) G1 S1 (1) N-Channel S2 (4) P-Channel ORDERING INFORMATION Ordering Number Lead Free Halogen Free UD606L-TN5-R UD606G-TN5-R UD606G-S08-R Package TO-252-5 SOP-8 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 S1 S1 Pin Assignment 2 3 4 5 6 7 8 G1 D1/D2 S2 G2 G1 S2 G2 D2 D2 D1 D1 Packing Tape Reel Tape Reel 1 of 11 QW-R502-169.C UD606 Power MOSFET MARKING TO-252-5 SOP-8 8 7 6 5 UTC UD606G 1 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 3 4 Date Code Lot Code 2 of 11 QW-R502-169.C UD606 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) N-Channel: PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note3) Pulsed Drain Current (Note3) Power Dissipation TC=25°C TC=25°C TO-252-5 SOP-8 SYMBOL VDSS VGSS ID IDM PD Junction Temperature Storage Temperature TJ TSTG RATINGS 40 ±20 8 30 2 1.25 +175 -55 ~ +175 UNIT V V A A W W °C °C RATINGS -40 ±20 -8 -30 2 1.25 2.5 UNIT V V A A W W W P-Channel: PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note3) Pulsed Drain Current (Note3) Power Dissipation TC=25°C TC=25°C TO-252-5 SOP-8 SYMBOL VDSS VGSS ID IDM PD Power Dissipation PD Junction Temperature TJ +175 °C Storage Temperature TSTG -55 ~ +175 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER N-Channel Junction to Ambient P-Channel SYMBOL TO-252-5 SOP-8 TO-252-5 SOP-8 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA MIN TYP 50 70 40 68 MAX 60 100 50 100 UNIT °C/W °C/W °C/W °C/W 3 of 11 QW-R502-169.C UD606 Power MOSFET ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) N-CHANNEL PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance (Note2) SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS=0V, ID=250uA VDS=32V, VGS=0V VDS=0V, VGS=±20V 40 VGS(TH) VDS=VGS, ID=250uA VGS=10V, ID=8A VGS=4.5V, ID=6A 1 RDS(ON) DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V,VDS=20V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note2) tD(ON) Turn-ON Rise Time tR VDS=20V, VGS=10V, RG=3Ω ID=1A Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF Total Gate Charge (Note2) QG VDS=20V, VGS=10V, ID=8A Gate-Source Charge QGS Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) VSD IS=1A, VGS=0V Diode Continuous Forward Current IS Reverse Recovery Time tRR IF=8A, dI/dt=100A/μs Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP 2.3 MAX UNIT 1 ±100 V uA nA 3 33 55 V mΩ mΩ 580 100 87 pF pF pF 30 30 140 70 85 9 7 ns ns ns ns nC nC nC 0.76 22.9 18.3 1 8 V A ns nC 4 of 11 QW-R502-169.C UD606 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) P-CHANNEL PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance (Note2) SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS=0V, ID=-250uA VDS=-32V, VGS=0V VDS=0V, VGS=±20V -40 VGS(TH) VDS=VGS, ID=-250uA VGS=-10V, ID=-8A VGS=-4.5V, ID=-4A -1 RDS(ON) DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V,VDS=-20V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note2) tD(ON) Turn-ON Rise Time tR VDS=-20V, VGS=-10V, RG=3Ω, RL=2.5Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF Total Gate Charge (Note2) QG VDS=-20V, VGS=-10V, ID=-8A Gate-Source Charge QGS Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) VSD IS=-1A, VGS=0V Diode Continuous Forward Current IS Reverse Recovery Time tRR IF=-8A, dI/dt=100A/μs Reverse Recovery Charge QRR Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle ≤0.5%. 3. Surface Mounted on 1in 2 pad area, t≤10sec. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP -1.8 35 55 MAX UNIT -1 ±100 V uA nA -3 50 70 V mΩ mΩ 657 143 63 pF pF pF 8 12.2 24 12.5 14.1 2.2 4.1 ns ns ns ns nC nC nC -0.75 23.2 18.2 -1 -8 V A ns nC 5 of 11 QW-R502-169.C UD606 Power MOSFET TYPICAL CHARACTERISTICS N-CHANNEL 100 On-Resisitance vs. Gate-Source Voltage 1.0E+01 ID=8A 90 1.0E+00 80 60 1.0E-02 125℃ 50 25℃ 1.0E-03 40 25℃ 1.0E-04 20 10 2 125℃ 1.0E-01 70 30 Body-Diode Characteristics 6 4 8 Gate Source Voltage, VGS(V) 10 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1.0E-05 0.0 0.6 0.8 0.2 0.4 1.0 Source Drain Voltage, VSD(V) 1.2 6 of 11 QW-R502-169.C UD606 TYPICAL CHARACTERISTICS(Cont.) Power (W) Drain Current, ID(A) Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 11 QW-R502-169.C UD606 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) 10 Normalized Maximum Transient Thermal Impedance In descending order D=0.5,0.3,0.1,0.05,0.02,0.01,Single Pulse 1 D=TON/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=60℃/W 0.1 PD Single Pulse 0.01 0.00001 0.0001 0.001 TON T 0.01 0.1 1 10 100 Pulse Width (s) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 11 QW-R502-169.C UD606 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) P-CHANNEL: On-Resistance Characteristics -10V -6V -5V Drain Current, -ID(A) 25 -4.5V VDS=-5V 20 VGS=-4V 15 10 -3.5V 20 15 10 125℃ 25℃ 5 5 0 Transient Characteristics 25 Drain Current, -ID(A) 30 -3V 0 1 2 3 4 Drain-Source Voltage, -VDS(V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 0 0 1 2 3 4 Gate-Source Voltage, -VGS(V) 5 9 of 11 QW-R502-169.C UD606 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Single Pulse Power Rating Junction-toCase Maximum Forward Biased Safe Operating Area 100.0 200 TJ(mAX)=175℃ TA=25℃ 10.0 160 10μs RDS(ON) Limited TJ(mAX)=175℃ TA=25℃ 120 100μs 1.0 DC 0.1 0.1 1 10 Drain-Source Voltage, -VDS(V) 1ms 100 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 80 40 0 0.0001 0.001 0.01 0.1 Pulse Width (s) 1 0 10 of 11 QW-R502-169.C UD606 TYPICAL CHARACTERISTICS(Cont.) On-Resistance vs. Drain Current and Gate Voltage 80 On-Resistance, RDS(ON)(mΩ) Power MOSFET 70 VGS=-4.5V 60 50 40 VGS=-10V 30 20 0 4 8 12 16 Drain Current, -ID(A) 20 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 11 of 11 QW-R502-169.C