AP9930M
Advanced Power
Electronics Corp.
2N AND 2P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Full Bridge Application on
N-CH BVDSS
P2G
N2D/P2D
RDS(ON)
P1S/P2S
P1G
N1S/N2S
LCD Monitor Inverter
N1D/P1D
6.3A
P-CH BVDSS
N1G
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
33mΩ
ID
N2G
SO-8
30V
-30V
RDS(ON)
55mΩ
ID
-5.1A
P1S
P2S
P1G
P2G
P2N2D
P1N1D
The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
N2G
N1G
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
N2S
N1S
Absolute Maximum Ratings
Units
P-channel
30
-30
V
± 25
±25
V
3
6.3
-5.1
A
3
4.2
-3.4
A
20
-20
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2.0
Linear Derating Factor
0.016
W
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
200612032
AP9930M
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
RDS(ON)
-
-
V
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.037
-
V/℃
Static Drain-Source On-Resistance2
VGS=10V, ID=5A
-
-
33
mΩ
VGS=4.5V, ID=3A
-
-
60
mΩ
VDS=VGS, ID=250uA
1
-
3
V
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=10V, ID=5A
-
5.2
-
S
o
VDS=30V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±25V
-
-
±100
nA
ID=5A
-
7.1
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
Typ. Max. Units
30
VGS(th)
VGS=0V, ID=250uA
Min.
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=15V
-
2.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.8
-
nC
VDS=15V
-
7.2
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
10.4
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=10V
-
18
-
ns
tf
Fall Time
RD=15Ω
-
7.8
-
ns
Ciss
Input Capacitance
VGS=0V
-
600
-
pF
Coss
Output Capacitance
VDS=25V
-
230
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
94
-
pF
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
IS=1.7A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=1.7A, VGS=0V
-
21.4
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
16
-
nC
AP9930M
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-30
-
-
V
-
-0.037
-
V/℃
VGS=-10V, ID=-5A
-
-
55
mΩ
VGS=-4.5V, ID=-3A
-
-
100
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA
RDS(ON)
2
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
IGSS
VGS=0V, ID=250uA
Max. Units
VDS=-10V, ID=-5A
-
4.8
-
S
o
VDS=-30V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ± 25V
-
-
±100
nA
Drain-Source Leakage Current (Tj=25 C)
2
Qg
Total Gate Charge
ID=-5A
-
7.3
-
nC
Qgs
Gate-Source Charge
VDS=-15V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
3.8
-
nC
VDS=-15V
-
10.8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
7.6
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=-10V
-
19.6
-
ns
tf
Fall Time
RD=15Ω
-
17.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
486
-
pF
Coss
Output Capacitance
VDS=-25V
-
185.5
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
133.8
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-1.7A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-1.7A, VGS=0V
-
21
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
15
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.
AP9930M
N-Channel
25
25
10V
8.0V
o
T A =25 C
ID , Drain Current (A)
20
T A =150 o C
6.0V
ID , Drain Current (A)
15
10
V G =3.0V
4.0V
15
10
V G =3.0V
5
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
6
1.8
45
I D =5A
I D =5A
T A =25 ℃
1.6
Normalized RDS(ON)
40
RDS(ON) (mΩ )
8.0V
6.0V
4.0V
5
10V
20
35
30
V G =10V
1.4
1.2
1.0
25
0.8
20
0.6
3
4
5
6
7
8
9
10
-50
11
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10.00
2
1.8
T j =150 o C
T j =25 o C
IS(A)
VGS(th) (V)
1.00
1.6
1.4
0.10
1.2
1
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
T j ,Junction Temperature (
100
o
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP9930M
N-Channel
f=1.0MHz
1000
Ciss
10
I D =4.5A
V DS =15V
Coss
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
Crss
100
4
2
10
0
0
2
4
6
8
10
12
14
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
10
ID (A)
1ms
10ms
1
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
Normalized Thermal Response (Rthja)
DUTY=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 135℃
℃ /W
Single Pulse
0.001
0.01
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q
AP9930M
P-Channel
25
25
T A =25 o C
-8.0V
20
-10V
-8.0V
-6.0V
20
-6.0V
-ID , Drain Current (A)
-ID , Drain Current (A)
T A =150 o C
-10V
15
-4.0V
10
5
15
-4.0V
10
5
V G =-3.0V
V G =-3.0V
0
0
0
1
2
3
4
5
0
6
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
100
I D =-5A
T A =25 ℃
90
I D =-5A
V G = -10V
1.6
Normalized RDS(ON)
RDS(ON) (mΩ )
80
70
60
50
1.4
1.2
1
0.8
40
30
0.6
3
4
5
6
7
8
9
10
11
-50
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10.00
3
2.5
T j =150 o C
T j =25 o C
-IS(A)
-VGS(th) (V)
1.00
2
0.10
1.5
0.01
1
0.1
0.3
0.5
0.7
0.9
1.1
1.3
-V SD ,Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
T j ,Junction Temperature (
100
o
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP9930M
P-Channel
I D =-5A
V DS =-15V
12
10
1000
C (pF)
-VGS , Gate to Source Voltage (V)
f=1.0MHz
10000
14
8
Ciss
Coss
Crss
6
100
4
2
0
10
0
2
4
6
8
10
12
14
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
DUTY=0.5
10
1ms
-ID (A)
10ms
1
100ms
1s
0.1
DC
T A =25 o C
Single Pulse
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Single Pulse
Rthja = 135℃
℃/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q