APTGT300A60TG Phase leg Trench + Field Stop IGBT Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control NTC2 VBUS Q1 G1 Features • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring E1 OUT Q2 G2 E2 0/VBU S G2 E2 VBUS 0/VBUS NTC1 Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant OUT OUT E1 E2 NTC2 G1 G2 NTC1 VCES = 600V IC = 300A @ Tc = 80°C Absolute maximum ratings Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C Reverse Bias Safe Operating Area Tj = 150°C 600A @ 550V TC = 25°C TC = 80°C TC = 25°C Unit V A April, 2009 IC Max ratings 600 430 300 450 ±20 935 RBSOA Parameter Collector - Emitter Breakdown Voltage V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT300A60TG – Rev 1 Symbol VCES APTGT300A60TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 300A Tj = 150°C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V 5.0 Typ 1.5 1.7 5.8 Max Unit 350 1.9 µA 6.5 500 V nA Max Unit V Dynamic Characteristics Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=±15V, IC=300A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 300A RG = 2.2Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 300A RG = 2.2Ω Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy Isc Short Circuit data Min Typ 18.4 1.16 0.54 nF 3.2 µC 115 45 225 ns 55 130 50 ns 300 70 1.7 3 8.2 10.6 Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C VGE = ±15V VBus = 300V IC = 300A RG = 2.2Ω mJ mJ 1500 A Reverse diode ratings and characteristics IF Maximum Reverse Leakage Current VR=600V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy IF = 300A VGE = 0V IF = 300A VR = 300V di/dt =4000A/µs www.microsemi.com Min 600 Typ Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 300 1.6 1.5 130 225 13.7 Tj = 150°C Tj = 25°C Tj = 150°C 29 3.2 7 Max 150 400 Unit V µA A 2 V April, 2009 IRM Test Conditions ns µC mJ 2-5 APTGT300A60TG – Rev 1 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT300A60TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min Typ 50 5 3952 4 Max Unit kΩ % K % Min Typ Max 0.16 0.29 Unit T25 = 298.15 K TC=100°C RT = R25 T: Thermistor temperature 1 ⎞⎤ RT: Thermistor value at T ⎡ ⎛ 1 exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦ ⎣ Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 2500 -40 -40 -40 2.5 °C/W V 175 125 100 4.7 160 °C N.m g ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT300A60TG – Rev 1 April, 2009 SP4 Package outline (dimensions in mm) APTGT300A60TG Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 500 500 TJ = 150°C VGE=19V TJ=25°C 400 400 VGE=13V 300 TJ=150°C 300 IC (A) IC (A) TJ=125°C 200 200 100 100 VGE=15V VGE=9V TJ=25°C 0 0 0 0.5 1 1.5 2 0 2.5 0.5 1 VCE (V) 16 TJ=25°C VCE = 300V VGE = 15V RG = 2.2Ω TJ = 150°C 12 300 E (mJ) IC (A) 400 TJ=125°C 200 3 3.5 Eoff Er 8 4 TJ=150°C 100 2.5 Energy losses vs Collector Current Transfert Characteristics 500 1.5 2 VCE (V) Eon TJ=25°C 0 0 5 6 7 8 9 10 0 11 100 200 VGE (V) Switching Energy Losses vs Gate Resistance 400 500 Reverse Bias Safe Operating Area 20 700 600 Eoff 16 500 Eoff 12 VCE = 300V VGE =15V IC = 300A TJ = 150°C 8 IC (A) E (mJ) 300 IC (A) 300 200 Er 4 400 VGE=15V TJ=150°C RG=2.2Ω 100 Eon 0 0 0 2.5 5 7.5 10 12.5 Gate Resistance (ohms) 15 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.16 IGBT 0.9 0.14 0.1 0.08 0.06 0.04 0.02 0.7 April, 2009 0.12 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4-5 APTGT300A60TG – Rev 1 Thermal Impedance (°C/W) 0.18 APTGT300A60TG Forward Characteristic of diode 500 100 ZCS 80 400 Tc=85°C ZVS 60 VCE=300V D=50% RG=2.2Ω TJ=150°C IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 40 Hard switching 20 300 TJ=125°C 200 TJ=150°C 100 TJ=25°C 0 0 0 100 200 IC (A) 300 0 400 0.4 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.25 Diode 0.9 0.7 0.2 0.15 0.1 0.05 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT300A60TG – Rev 1 April, 2009 Rectangular Pulse Duration in Seconds