APTGF75DDA120TG Dual Boost Chopper NPT IGBT Power Module VCES = 1200V IC = 75A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power factor correction Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration G4 SENSE1 E4 VBUS 0/VBUS OUT2 OUT1 VBUS E2 NTC2 SENSE2 G2 NTC1 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area Tc = 25°C Max ratings 1200 100 75 150 ±20 500 Tj = 150°C 150A @ 1200V Tc = 25°C Tc = 80°C Tc = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGF75DDA120TG – Rev 2 July, 2006 VBUS Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant APTGF75DDA120TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF Test Conditions Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C T VGE =15V j = 25°C IC = 75A Tj = 125°C VGE = VCE, IC = 2.5 mA VGE = ±20V, VCE = 0V Min Test Conditions VGE = 0V VCE = 25V f = 1MHz Min trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ 5.1 0.7 0.4 120 50 310 20 Max 250 500 3.7 Unit 6.5 ±500 V nA Max Unit VR=1200V IF = 100A IF = 200A IF = 100A IF = 100A VR = 800V di/dt =200A/µs V ns 130 60 360 ns 30 9 mJ 4 Typ Max Unit V Tj = 25°C 250 Tj = 125°C 500 Tc = 70°C 100 Tj = 125°C 2.0 2.3 1.8 Tj = 25°C 420 Tj = 125°C 580 Tj = 25°C 1.2 Tj = 125°C 5.3 www.microsemi.com µA nF 1200 DC Forward Current Diode Forward Voltage 4.5 Min Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 3.2 3.9 Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 75A R G = 7.5Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 75A R G = 7.5Ω VGE = 15V Tj = 125°C VBus = 600V IC = 75A Tj = 125°C R G = 7.5Ω Test Conditions Typ µA A 2.5 V ns µC 2-5 APTGF75DDA120TG – Rev 2 July, 2006 Symbol Characteristic APTGF75DDA120TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.25 0.6 Unit T: Thermistor temperature Thermal and package characteristics VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Symbol Characteristic RthJC Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M5 2500 -40 -40 -40 2.5 °C/W V 150 125 100 4.7 160 °C N.m g ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGF75DDA120TG – Rev 2 July, 2006 SP4 Package outline (dimensions in mm) APTGF75DDA120TG Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 150 150 125 125 TJ=25°C IC (A) IC (A) 75 50 VGE=12V 75 VGE =9V 50 T J=125°C 25 25 0 0 0 1 2 3 V CE (V) 4 5 6 0 1 2 3 4 VCE (V) 5 6 Energy losses vs Collector Current Transfert Characteristics 150 28 VCE = 600V VGE = 15V RG = 7.5 Ω TJ = 125°C 24 125 20 E (mJ) 100 IC (A) VGE =20V 100 100 TJ=125°C 75 50 Eon 16 12 8 T J=25°C 25 4 Eoff 0 0 5 6 7 8 9 10 11 0 12 25 50 75 100 125 150 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 35 175 25 20 150 125 Eon IC (A) VCE = 600V VGE =15V IC = 75A T J = 125°C 30 E (mJ) VGE =15V TJ = 125°C 15 10 100 75 VGE=15V T J=125°C RG=7.5 Ω 50 Eoff 25 5 0 0 0 10 20 30 40 50 Gate Resistance (ohms) 60 0 70 300 600 900 1200 1500 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration IGBT 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGF75DDA120TG – Rev 2 July, 2006 Thermal Impedance (°C/W) 0.3 APTGF75DDA120TG Forward Characteristic of diode 250 ZVS 50 40 30 20 10 0 VCE=600V D=50% RG=7.5 Ω TJ =125°C TC=75°C 200 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 100 90 80 70 60 ZCS hard switching 150 T J=125°C 100 T J=25°C 50 0 0 20 40 60 IC (A) 80 0 100 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.7 0.6 0.5 Diode 0.9 0.7 0.4 0.3 0.2 0.1 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGF75DDA120TG – Rev 2 July, 2006 rectangular Pulse Duration (Seconds)