Datasheet

UNISONIC TECHNOLOGIES CO., LTD
IMX17
DUAL TRANSISTOR
GENERAL PURPOSE DUAL
TRANSISTOR
„
FEATURES
* *Two MMBT2222A chips in an SMT package.
* Transistor elements are independent, eliminating interference.
* High collector current. IC=500mA.
* Mounting cost an area can be cut in half.
„
EQUIVALENT CIRCUITS
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
IMX17L-AG6 -R
IMX17G-AG6-R
Note: Pin Assignment: B: Base C: Collector E: Emitter
„
Package
SOT-26
1
E1
Pin Assignment
2
3
4
5
B1 C2 E2 B2
6
C1
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
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DUAL TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
500
mA
Collector Power Dissipation
PD
300 (TOTAL)
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1. 200mW per element must not be exceeded.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency (Note)
Output Capacitance
Note: Measured using pulse current.
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(SAT)
hFE
fT
COB
TEST CONDITIONS
IC=100µA
IC=1mA
IE=100µA
VCB=30V
VEB=4V
IC=500mA, IB=50mA
VCE= 3V, IC= 100mA(note)
VCE=5V, IE=-20mA, f=100MHz
VCB= 10V, IE=0A, f=1MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
60
50
5
TYP
MAX
0.1
0.1
0.6
390
120
250
7
UNIT
V
V
V
µA
µA
V
MHz
pF
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DUAL TRANSISTOR
ELECTRICAL CHARACTERISTIC CURVES
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Grounded Emitter Propagation Characteristics
Collector Current : IC (mA)
Collector Current : IC (mA)
Grounded Emitter Output Characteristics
Collector to Emitter Voltage : VBE (V)
Base to Emitter Voltage : VBE (V)
DC Current Gain vs. Collector Current (
Collector Current :IC (mA)
Collector-emitter Saturation Voltage
vs. Collector Current
Collector Saturation Voltage : VCE(sat)
Collector-emitter Saturation Voltage
vs. Collector Current
(V)
Collector Current :IC (mA)
Collector Saturation Voltage : VCE(sat) (V)
)
DC Current Gain : hFE
DC Current Gain : hFE
DC Current Gain vs. Collector Current ( )
Collector Current : IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector Current : IC (mA)
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DUAL TRANSISTOR
ELECTRICAL CHARACTERISTIC CURVES(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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