Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2SB1386
PNP SILICON TRANSISTOR
LOW FREQUENCY PNP
TRANSISTOR

FEATURES
* Excellent DC current gain characteristics
* Low VCE(SAT)
VCE(SAT)= -0.35V (Typ)
(IC/IB = -4A/-0.1A)

ORDERING INFORMATION
Order Number
2SB1386G-x-AB3-R
Note: Pin Assignment: B: Base C: Collector

Package
SOT-89
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
E: Emitter
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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2SB1386

PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS ( TA=25C, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-30
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current (DC)
IC(DC)
-5
A
Collector Current (Pulse) (Note2)
IC(PULSE)
-10
A
Collector Power Dissipation
PC
0.5
W
Junction Temperature
TJ
150
C
Storage Temperature
TSTG
-55 ~ +150
C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Single pulse, PW=10ms

ELECTRICAL CHARACTERISTICS ( TA=25C, unless otherwise specified )
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Output Capacitance

SYMBOL
BVCBO
BVCEO
BVEBO
VCE(SAT)
ICBO
IEBO
hFE
fT
Cob
TEST CONDITIONS
IC= -50μA
IC= -1mA
IE= -50μA
IC/IB= -4A/-0.1A
VCB= -20V
VEB= -5V
VCE= -2V, IC= -0.5A
VCE= -6V, IE= 50mA, f=30MHz
VCB= -20V, IE= 0A, f=1MHz
MIN
-30
-20
-6
TYP
MAX
-1.0
-0.5
-0.5
390
82
120
60
UNIT
V
V
V
V
μA
μA
MHz
pF
CLASSIFICATION OF hFE
RANK
RANGE
P
82-180
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Q
120-270
R
180-390
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
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector Current vs. Base to Emitter
Voltage
-10
-5 VCE = -2V
-2
-1
-500m
-200m
-100m
-50m
-5
-4
Ta=100℃
-30mA Ta=25℃
-25mA
-20mA
-45mA
-3
Ta=25℃
-10mA
Ta= -25℃
-35mA
-2
-40mA
-5mA
-1
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
Base to Emitter Voltage, VBE(V)
DC Current Gain vs. Collector Current(1)
5k
2k
-50mA
-15mA
-20m
-10m
-5m
-2m
-1m
0
Collector Current vs. Collector to Emitter
Voltage
Ta=25℃
0
0
IB =0mA
-0.4
-0.8
-1.2
-1.6
-2.0
Collector to Emitter Voltage, VCE(V)
DC Current Gain vs. Collector Current(2)
5k
2k
VcE= -1V
1k
1k
Ta=100℃
500
500
VcE= -5V
200
100
VcE= -2V
VcE= -1V
50
200
100
Ta=25℃
Ta= -25℃
50
20
10
20
10
5
-1m-2m-5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10
Collector Current, Ic(A)
5
-1m-2m-5m-0.01-0.02-0.05 -0.1-0.2-0.5-1 -2 -5 -10
Collector Current, IC(A)
DC Current Gain vs. Collector Current
5k
-5
VcE= -2V
Ta=25℃
2k
-2
1k
-1
Ta=100℃
500
200
100
Collector-Emitter Saturation Voltage vs.
Collector Current (1)
-0.5
Ta= -25℃
-0.2
Ta=25℃
50
20
10
5
-1m-2m-5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10
Collector Current, Ic(A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
-0.1
Ic/IB=50/1
40/1
30/1
10/1
-0.05
-0.02
-0.01
-2m -5m-0.01-0.02-0.05 -0.1-0.2-0.5-1 -2 -5 -10
Collector Current, Ic(A)
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TYPICAL CHARACTERICS(Cont.)
Collector-Emitter Saturation Voltage vs.
Collector Current (2)
Ic/IB=10
-2
-1
-0.5
-0.2
-0.1
Ta=100℃
-0.05
Ta=25℃
-0.02
-0.01
-2m -5m
Ta= -25℃
-0.01-0.02-0.05 -0.1-0.2-0.5 -1
-2 -5 -10
Collector Saturation Voltage, VCE(SAT) ( V)
Collector Saturation Voltage, VCE(SAT) (V)
-5
-5
Collector-Emitter Saturation Voltage vs.
Collector Current (3)
Ic/IB=30
-2
-1
Ta=100℃
-0.5
Ta=25℃
-0.2
-0.1
-0.05
Ta= -25℃
-0.02
-0.01
-2m
Collector Current, Ic(A)
Collector-Emitter Saturation Voltage vs.
Collector Current (IV)
Ic/IB=40
-2
Ta= -25℃
-1
Ta=25℃
-0.5
-0.2
Ta=100℃
-0.1
-0.05
-0.02
-0.01
-2m -5m
-0.01-0.02-0.05 -0.1-0.2-0.5 -1
-2 -5 -10
Collector Saturation Voltage, VCE(SAT)(V)
Collector Saturation Voltage, VCE(SAT) ( V)
-5
-5
500
Ta=25℃
VcE= -6V
200
100
50
20
10
5
2
1
1
2
5 10 20 50 100200 500 1000
Emitter Current, IE(mA)
Collector Output Capacitance, Cob (pF)
Transetion Frequency vs. Emitter Current
1000
UNISONIC TECHNOLOGIES CO., LTD
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-5m-0.01-0.02-0.05 -0.1-0.2-0.5-1 -2 -5 -10
Collector Current, Ic(A)
Collector-Emitter Saturation Voltage vs.
Collector Current (V)
Ic/IB=50
-2
Ta= -25℃
Ta=25℃
-1
Ta=100℃
-0.5
-0.2
-0.1
-0.05
-0.02
-0.01
-2m
Collector Current, Ic(A)
Transetion Frequency, fT (MHz)

PNP SILICON TRANSISTOR
1000
500
-5m-0.01-0.02-0.05 -0.1-0.2-0.5-1 -2 -5 -10
Collector Current, Ic(A)
Collector Output Capacitance vs.
Collector-Base Voltage
Ta=25℃
f =1MHz
IE=0A
200
100
50
20
10
-5 -10 -20
-0.1 -0.2 -0.5 -1 -2
Collector to Base Voltage, VCB(V)
-50
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PNP SILICON TRANSISTOR
TYPICAL CHARACTERICS(Cont.)
1000
Emitter Input Capacitance vs. EmitterBase Voltage
500
Ic=0A
200
100
50
20
-0.1
Ta=25℃
f=1MHz
-0.2
-0.5 -1
-2
-5 -10
Emitter To Base Voltage, VEB(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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