UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT package. FEATURES * Two MMBT9015 chips in an SMT package. EQUIVALENT CIRCUITS ORDERING INFORMATION Order Number Package IMT2AG-AG6-R SOT-26 1 C1 Pin Description 2 3 4 5 B2 C2 E2 E1 6 B1 Packing Tape Reel IMT2AG-AG6-R (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AG6: SOT-26 (3)Green Package (3) G: Halogen Free and Lead Freee MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R215-003.E IMT2A PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO -60 V Collector to Emitter voltage VCEO -50 V Emitter to Base Voltage VEBO -6 V Collector Current IC -150 mA Collector Power Dissipation (total) PC 300(Note) mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. 200mW per element must not be exceeded. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector to Base Breakdown Voltage BVCBO IC =-50 μA Collector to Emitter Breakdown Voltage BVCEO IC =-1mA Emitter to Base Breakdown Voltage BVEBO IE =-50 μA Collector Cut Off Current ICBO VCB =-60 V Emitter Cut Off Current IEBO VEB =-6 V Collector to Emitter Saturation Voltage VCE(SAT) IC=-50 mA, IB=-5 mA DC Forward Current Gain hFE VCE =-6 V, IC=-1mA Transition Frequency fT VCE =-12V,IE =2mA, f=100MHz (Note) Output Capacitance COB VCB = -12V,IE =0mA,f=1MHz Note: Transition frequency of the device. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -60 V -50 V -6 V -0.1 μA -0.1 μA -0.5 V 120 560 140 MHz 4 5 pF 2 of 4 QW-R215-003.E IMT2A PNP EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS Grounded Emitter Output Characteristics (Ⅱ) Grounded Emitter Output Characteristics (Ⅰ) IB=-30µA TA=25℃ IB=-25µA -8 IB=-20µA -6 IB=-15µA -4 IB=-10µA -2 IB=-5µA IB=0A 0 0 -0.4 -0.8 -1.2 TA=25℃ IB=-300µA IB=-350µA -40 IB=-250µA IB=-200µA -30 IB=-150µA -20 IB=-100µA -10 IB=-50µA IB=0A 0 -1.6 -2.0 0 -1 -2 -3 -5 -4 Collector to Emitter Voltage,VCE (V) Collector to Emitter Voltage,VCE (V) Grounded Emitter Propagation Characteristics DC Current Gain vs. Collector Current -50 -20 -10 500 VCE=-6V Ta=100℃ 25℃ -40℃ DC Current Gain,hFE Collector Current,IC (mA) -50 Collector Current,IC (mA) Collector Current,IC (mA) -10 -5 -2 -1 TTAA=25℃ =25℃ VCE=-5V -3V -1V 200 100 -0.5 50 -0.2 -0.1 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 Collector Saturation Voltage,VCE(SAT) (V) Base to Emitter Voltage,VBE (V) -1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 Collector Current,IC (mA) Collector-Emitter Saturation Voltage vs. Collector Current TA=25℃ -0.5 -0.2 -0.1 Ic / IB =50 Ic / IB =20 -0.05 -0.2 Ic / IB =10 -0.5 -1 -2 -5 -10 -20 Collector Current,IC (mA) -50 -100 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R215-003.E IMT2A PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R215-003.E