Datasheet

UNISONIC TECHNOLOGIES CO., LTD
IMT2A
PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE DUAL
TRANSISTOR

DESCRIPTION
The UTC IMT2A is a general purpose dual transistor within two
chips in a SMT package.

FEATURES
* Two MMBT9015 chips in an SMT package.

EQUIVALENT CIRCUITS

ORDERING INFORMATION
Order Number
Package
IMT2AG-AG6-R
SOT-26
1
C1
Pin Description
2
3
4
5
B2 C2 E2 E1
6
B1
Packing
Tape Reel
IMT2AG-AG6-R

(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) AG6: SOT-26
(3)Green Package
(3) G: Halogen Free and Lead Freee
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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IMT2A

PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
-60
V
Collector to Emitter voltage
VCEO
-50
V
Emitter to Base Voltage
VEBO
-6
V
Collector Current
IC
-150
mA
Collector Power Dissipation (total)
PC
300(Note)
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. 200mW per element must not be exceeded.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Base Breakdown Voltage
BVCBO IC =-50 μA
Collector to Emitter Breakdown Voltage
BVCEO IC =-1mA
Emitter to Base Breakdown Voltage
BVEBO IE =-50 μA
Collector Cut Off Current
ICBO
VCB =-60 V
Emitter Cut Off Current
IEBO
VEB =-6 V
Collector to Emitter Saturation Voltage
VCE(SAT) IC=-50 mA, IB=-5 mA
DC Forward Current Gain
hFE
VCE =-6 V, IC=-1mA
Transition Frequency
fT
VCE =-12V,IE =2mA, f=100MHz (Note)
Output Capacitance
COB
VCB = -12V,IE =0mA,f=1MHz
Note: Transition frequency of the device.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
-60
V
-50
V
-6
V
-0.1 μA
-0.1 μA
-0.5
V
120
560
140
MHz
4
5
pF
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PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS

Grounded Emitter Output Characteristics (Ⅱ)
Grounded Emitter Output Characteristics (Ⅰ)
IB=-30µA
TA=25℃
IB=-25µA
-8
IB=-20µA
-6
IB=-15µA
-4
IB=-10µA
-2
IB=-5µA
IB=0A
0
0
-0.4
-0.8
-1.2
TA=25℃
IB=-300µA
IB=-350µA
-40
IB=-250µA
IB=-200µA
-30
IB=-150µA
-20
IB=-100µA
-10
IB=-50µA
IB=0A
0
-1.6
-2.0
0
-1
-2
-3
-5
-4
Collector to Emitter Voltage,VCE (V)
Collector to Emitter Voltage,VCE (V)
Grounded Emitter Propagation Characteristics
DC Current Gain vs. Collector Current
-50
-20
-10
500
VCE=-6V
Ta=100℃
25℃
-40℃
DC Current Gain,hFE
Collector Current,IC (mA)
-50
Collector Current,IC (mA)
Collector Current,IC (mA)
-10
-5
-2
-1
TTAA=25℃
=25℃
VCE=-5V
-3V
-1V
200
100
-0.5
50
-0.2
-0.1
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
Collector Saturation Voltage,VCE(SAT) (V)
Base to Emitter Voltage,VBE (V)
-1
-0.2 -0.5 -1
-2
-5 -10 -20
-50 -100
Collector Current,IC (mA)
Collector-Emitter Saturation Voltage
vs. Collector Current
TA=25℃
-0.5
-0.2
-0.1
Ic / IB =50
Ic / IB =20
-0.05
-0.2
Ic / IB =10
-0.5 -1 -2
-5 -10 -20
Collector Current,IC (mA)
-50 -100
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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IMT2A
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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