UNISONIC TECHNOLOGIES CO., LTD MMBTA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTORS FEATURES 3 *Collector-Emitter voltage: VCEO=400V (UTC MMBTA44) VCEO=350V (UTC MMBTA45) *Collector current up to 300mA *Complement to UTC MMBTA94/93 *Power Dissipation: PD(max)=350mW 2 1 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Ordering Number Note: MMBTA44G-AE3-R MMBTA45G-AE3-R Pin Assignment: E: Emitter Package SOT-23 SOT-23 C: Collector B: Base Pin Assignment 1 2 3 E B C E B C Packing Tape Reel Tape Reel MARKINGS MMBTA44 MMBTA45 www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd. 1 of 4 QW-R206-007.F MMBTA44/45 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT 500 V Collector-Base Voltage VCBO 400 V 400 V Collector-Emitter Voltage VCEO 350 V Emitter-Base Voltage VEBO 6 V Collector Current IC 300 mA TA=25°C 350 mW Power Dissipation PD TC=25°C 1.5 W Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. MMBTA44 MMBTA45 MMBTA44 MMBTA45 ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER MMBTA44 Collector-Base Breakdown Voltage MMBTA45 Collector-Emitter Breakdown MMBTA44 Voltage MMBTA45 Emitter-Base Breakdown Voltage SYMBOL BVCBO IC=100μA, IB=0 BVCEO IC =1mA, IB=0 BVEBO IE=100μA, IC =0 IC =1mA, IB=0.1mA IC =10mA, IB=1mA IC =50mA, IB=5mA IC 10mA, IB=1mA VCB=400V, IE =0 VCB=320V, IE =0 VCE =400V, IB=0 VCE =320V, IB=0 VEB=4V, IC =0 VCE =10V, IC =1mA VCE =10V, IC =10mA VCE =10V, IC =50mA VCE =10V, IC =100mA VCE =20V, IC =10mA f=100MHz VCB=20V, IE =0, f=1MHz Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage MMBTA44 Collector Cut-off Current MMBTA45 MMBTA44 Collector Cut-off Current MMBTA45 Emitter Cut-off Current VBE(SAT) DC Current Gain (Note) Current Gain Bandwidth Product Output Capacitance Note: Pulse test: PW<300μs, Duty Cycle<2% ICBO ICES IEBO hFE1 hFE2 hFE3 hFE4 fT Cob UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS MIN 500 400 400 350 6 TYP MAX 0.4 0.5 0.75 0.75 0.1 0.1 0.5 0.5 0.1 40 50 45 40 UNIT V V V V V V V V V μA μA μA μA μA 240 50 MHz 7 pF 2 of 4 QW-R206-007.F MMBTA44/45 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R206-007.F MMBTA44/45 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(cont.) High Frequency Current Gain 1 2 10 3 C 1 5° 0 10 10 10 Collector Current, IC (mA) =2 -1 10 10 2 0.1ms C -1 1s Ta 10 1ms 10 3 5° 10 0 Valid Duty Cycle <10 % =2 Collector Current, IC (mA) 10 10 4 VCE =10 V f =10 MHz Ta =25°C Ta Small Signal Current Gain, hFE 10 2 Safe Operating Area 10 10 1 MPSA 44 0 10 0 1 2 10 10 10 Collector Voltage(V) 3 10 4 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-007.F