UNISONIC TECHNOLOGIES CO., LTD PZTA92/93 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC PZTA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES * Collector-emitter voltage: VCEO=-300V (UTC PZTA92) VCEO=-200V (UTC PZTA93) * Complement to UTC PZTA42/43 * Collector power dissipation: PC(MAX)=1W ORDERING INFORMATION Ordering Number Package PZTA92G-AA3-R PZTA93G-AA3-R SOT-223 SOT-223 Pin Assignment 1 2 3 B C E B C E Packing Tape Reel Tape Reel MARKING PZTA92 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd PZTA93 1 of 4 QW-R207-006.E PZTA92/93 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT -300 V Collector-Base Voltage VCBO -200 V -300 V Collector-Emitter Voltage VCEO -200 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Collector Power Dissipation Pc 1 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. PZTA92 PZTA93 PZTA92 PZTA93 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS PZTA92 Collector-Base Breakdown Voltage BVCBO IC=-100μA, IE=0 PZTA93 PZTA92 Collector-Emitter Breakdown Voltage BVCEO IC =-1mA, IB=0 PZTA93 Emitter-Base Breakdown Voltage BVEBO IE=-100μA, IC =0 VCB=-200V, IE=0 PZTA92 Collector Cut-Off Current ICBO VCB=-160V, IE=0 PZTA93 Emitter Cut-Off Current IEBO VEB=-3V, IC =0 VCE=-10V, IC =-1mA DC Current Gain (Note) hFE VCE=-10V, IC =-10mA VCE=-10V, IC =-30mA Collector-Emitter Saturation Voltage VCE(SAT) IC =-20mA, IB=-2mA Base-Emitter Saturation Voltage VBE(SAT) IC =-20mA, IB=-2mA Current Gain Bandwidth Product fT VCE=-20V,Ic=-10mA, f=100MHz PZTA92 Collector Base Capacitance CCB VCB=-20V, IE=0, f=1MHz PZTA93 Note: Pulse test: PW<300μs, Duty Cycle<2%, VCE (SAT) <200mV (Class SIN) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN -300 -200 -300 -200 -5 TYP MAX -0.25 -0.25 -0.10 UNIT V V V V V μA μA μA 60 80 80 -0.5 -0.90 50 6 8 V V MHz pF pF 2 of 4 QW-R207-006.E PZTA92/93 PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS DC Current Gain 103 -104 I =10*I C B VCE=-10V Saturation Voltage VCE(SAT) 102 -103 VBE(SAT) -102 101 100 -100 1 -10 -10 2 3 -10 -10 4 -101 -100 Collector Current, IC (mA) Capacitance 102 Active-Region Safe Operating Area -101 -101 s 0.1m 101 CCB ms 1.0 n tio ita lim al m °C er 25 Th T C= -101 C D 5W 1. CIB -104 -102 -103 -101 Collector Current, IC (mA) MPSA93 MPSA92 625mW Thermal limitation TA=25°C bonding breakdown limitation TJ=150°C -1 -10 0 -10 -10 1 2 -10 Collector-Base Voltage, VCB (V) 103 -100 0 -10 -101 -102 -103 Collector-Emitter Voltage, VCE ( V) Current Gain Bandwidth Product VCE=-20V f=100MHz 102 101 0 -10 -101 -102 Collector Current, IC (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R207-006.E PZTA92/93 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R207-006.E