IRFB18N50K_RC, SiHFB18N50K_RC

IRFB18N50K_RC, SiHFB18N50K_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have been
derived using curve-fitting techniques. R-C values for the
electrical circuit in the Foster/tank and Cauer/filter
configurations are included. When implemented in P-SPICE,
these values have matching characteristic curves to the
single-pulse transient thermal impedance curves for the
MOSFET.
These RC values can be used in the P-SPICE simulation to
evaluate the thermal behavior of the MOSFET junction
temperature under a defined power profile. These
techniques are described in application note AN609,
“Thermal Simulation of Power MOSFETs on the P-SPICE
Platform”.
R-C THERMAL MODEL FOR TANK CONFIGURATION
T (Junction)
RT1
RT2
RT3
RT4
CT1
CT2
CT3
CT4
T (Ambient)
R-C VALUES FOR TANK CONFIGURATION
THERMAL RESISTANCE (°C/W)
Junction to
Ambient
Case
Foot
RT1
N/A
54.0854 m
N/A
RT2
N/A
123.7768 m
N/A
RT3
N/A
248.6800 m
N/A
RT4
N/A
133.4578 m
N/A
THERMAL CAPACITANCE (Joules/°C)
Junction to
Ambient
Case
Foot
CT1
N/A
4.1414 m
N/A
CT2
N/A
150.3016 m
N/A
CT3
N/A
150.2554 m
N/A
CT4
N/A
24.7654 m
N/A
Note
N/A indicates not applicable
This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer to
the appropriate datasheet of the same number for guaranteed specification limits.
Document Number: 90422
Revision: 16-Apr-10
www.vishay.com
1
IRFB18N50K_RC, SiHFB18N50K_RC
Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
T (Junction)
RF2
RF1
CF1
CF2
RF3
RF4
T (Ambient)
CF4
CF3
GND
R-C VALUES FOR FILTER CONFIGURATION
THERMAL RESISTANCE (°C/W)
Junction to
Ambient
Case
RF1
N/A
57.9136 m
Foot
N/A
RF2
N/A
187.5157 m
N/A
RF3
N/A
134.3644 m
N/A
RF4
N/A
180.2063 m
N/A
THERMAL CAPACITANCE (Joules/°C)
Junction to
Ambient
Case
CF1
N/A
2.2453 m
Foot
N/A
CF2
N/A
14.4841 m
N/A
CF3
N/A
44.1958 m
N/A
CF4
N/A
99.7504 m
N/A
Note
N/A indicates not applicable
www.vishay.com
2
Document Number: 90422
Revision: 16-Apr-10
IRFB18N50K_RC, SiHFB18N50K_RC
Vishay Siliconix
Document Number: 90422
Revision: 16-Apr-10
www.vishay.com
3