IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current Single • Low RDS(on) D • Lead (Pb)-free Available TO-220 APPLICATIONS • Switch Mode Power Supply (SMPS) G • Uninterruptible Power Supply S G D • High Speed Power Switching S • Hard Switched and High Frequency Circuits N-Channel MOSFET ORDERING INFORMATION Package TO-220 IRFB18N50KPbF SiHFB18N50K-E3 IRFB18N50K SiHFB18N50K Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ± 30 Continuous Drain Current Pulsed Drain VGS at 10 V TC = 25 °C TC = 100 °C Currenta ID IDM Linear Derating Factor Single Pulse Avalanche Energyb UNIT V 17 11 A 68 1.8 W/°C mJ EAS 370 Currenta IAR 17 A Repetitive Avalanche Energya EAR 22 mJ Repetitive Avalanche Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque PD 220 W dV/dt 7.8 V/ns TJ, Tstg - 55 to + 150 for 10 s 300d 6-32 or M3 screw 10 °C N Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. Starting TJ = 25 °C, L = 2.5 mH, RG = 25 Ω, IAS = 17 A. c. ISD ≤ 17 A, dI/dt ≤ 376 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91100 S09-0015-Rev. A, 19-Jan-09 www.vishay.com 1 IRFB18N50K, SiHFB18N50K Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum SYMBOL Junction-to-Ambienta Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain)a TYP. MAX. RthJA - 58 RthCS 0.50 - RthJC - 0.56 UNIT °C/W Note a. Rth is measured at TJ approximately 90 °C. SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 µA 500 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.59 - V/°C VGS(th) VDS = VGS, ID = 250 µA 3.0 - 5.0 V nA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance IGSS IDSS RDS(on) gfs VGS = ± 30 V - - ± 100 VDS = 500 V, VGS = 0 V - - 50 VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 ID = 10 Ab VGS = 10 V VDS = 50 V, ID = 10 A µA - 0.26 0.29 Ω 6.4 - - S - 2830 - Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Effective Output Capacitance Coss Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Fall Time VGS = 0 V Coss eff. Total Gate Charge Turn-Off Delay Time VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 tr td(off) - 330 - - 38 - VDS = 1.0 V, f = 1.0 MHz - 3310 - VDS = 400 V, f = 1.0 MHz - 93 - - 155 - - - 120 - - 34 VDS = 0 V to 400 Vc ID = 17 A, VDS = 400 V, see fig. 6 and 13b VGS = 10 V VDD = 250 V, ID = 17 A, RG = 7.5 Ω, see fig. 10b tf pF nC - - 54 - 22 - - 60 - - 45 - - 30 - - - 17 - - 68 - - 1.5 - 520 780 ns - 5.3 8.0 µC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 17 A, VGS = 0 Vb TJ = 25 °C, IF = 17 A, dI/dt = 100 A/µsb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Coss eff. is a fixed capacitance that givs the same charging time as Coss while VDS is rising from 0 to 80 % VDS. www.vishay.com 2 Document Number: 91100 S09-0015-Rev. A, 19-Jan-09 IRFB18N50K, SiHFB18N50K Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100.00 10 1 VGS TOP 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V 0.1 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 5.0V 0.01 TJ = 150°C 10.00 1.00 TJ = 25°C 0.10 20µs PULSE WIDTH Tj = 25°C VDS = 100V 20µs PULSE WIDTH 0.01 0.001 0.1 1 10 5.0 100 VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) 100 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V ID, Drain-to-Source Current (A) TOP 10 5.0V 1 0.1 20µs PULSE WIDTH Tj = 150°C 0.01 0.1 1 10 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Document Number: 91100 S09-0015-Rev. A, 19-Jan-09 6.0 7.0 8.0 9.0 10.0 VGS , Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics 100 3.0 ID = 17A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFB18N50K, SiHFB18N50K Vishay Siliconix VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance(pF) 10000 Ciss 1000 Coss 100 ISD , Reverse Drain Current (A) 100 100000 TJ = 150 ° C 10 TJ = 25 ° C 1 Crss 10 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage ID = 17A 16 V GS = 0 V 0.5 0.8 1.1 1.4 VSD ,Source-to-Drain Voltage (V) Fig. 7 - Typical Source-Drain Diode Forward Voltage 1000 V DS= 400V V DS= 250V V DS= 100V OPERATION IN THIS AREA LIMITED BY RDS(on) 100 ID , Drain Current (A) VGS , Gate-to-Source Voltage (V) 20 0.1 0.2 12 8 10us 100us 10 1ms 10ms 1 4 0 0 30 60 90 120 150 QG , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 0.1 TC = 25 °C TJ = 150 °C Single Pulse 10 100 1000 10000 VDS , Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91100 S09-0015-Rev. A, 19-Jan-09 IRFB18N50K, SiHFB18N50K Vishay Siliconix RD VDS 20 VGS D.U.T. ID , Drain Current (A) RG + - VDD 15 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 10 Fig. 10a - Switching Time Test Circuit VDS 5 0 90 % 25 50 75 100 125 150 10 % VGS TC , Case Temperature ( °C) td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response(Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM 0.01 t1 t2 Notes: 1. Duty factor D =t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS 15 V tp L VDS D.U.T. RG IAS 20 V tp Driver + A - VDD 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91100 S09-0015-Rev. A, 19-Jan-09 IAS Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRFB18N50K, SiHFB18N50K EAS , Single Pulse Avalanche Energy (mJ) Vishay Siliconix 750 ID 7.6A 11A BOTTOM 17A TOP 600 450 300 150 0 25 50 75 100 125 150 Starting T J, Junction Temperature ( ° C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG VGS 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91100 S09-0015-Rev. A, 19-Jan-09 IRFB18N50K, SiHFB18N50K Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - • • • • RG dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91100. Document Number: 91100 S09-0015-Rev. A, 19-Jan-09 www.vishay.com 7 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F ØP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Revison: 14-Dec-15 Xi’an Document Number: 66542 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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