UNISONIC TECHNOLOGIES CO., LTD TC200 Preliminary NPN EPITAXIAL SILICON TRANSISTOR EPITAXIAL PLANAR NPN TRANSISTOR DESCRIPTION The UTC TC200 is an epitaxial planar NPN transistor; it uses UTC’s advanced technology to provide the customers with high DC current gain and low collector-emitter saturation voltage, etc. The UTC TC200 is suitable for general purpose and switching application, etc. FEATURES * High DC current gain * Low Collector-Emitter Saturation Voltage ORDERING INFORMATION Ordering Number Lead Free Halogen Free TC200L-x-T92-B TC200G-x-T92-B TC200L-x-T92-K TC200G-x-T92-K Note: Pin Assignment: C: Collector B: Base E: Emitter Package TO-92 TO-92 Pin Assignment 1 2 3 E C B E C B Packing Tape Box Bulk TC200L-x-T92-B (1)Packing Type (1) B: Tape Box, K: Bulk (2)Package Type (2) T92: TO-92 (3)Rank (3) refer to CLASSIFICATION OF hFE1 (4)Halogen Free (4) L: Lead Free, G: Halogen Free www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 3 QW-R201-087.a TC200 Preliminary NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current IC 500 mA Emitter Current IE -500 mA Collector Power Dissipation PC 625 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA =25°C) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Current Gain Bandwidth Product Output Capacitance SYMBOL ICBO IEBO hFE1 hFE2 VCE(sat) VBE fT Cob TEST CONDITIONS VCB=50V, IE=0 VEB=5V, IC=0 VCE=2V, IC=50mA VCE=2V, IC=200mA IC=100mA, IB=10mA VCE=2V, IC=200mA VCE=6V, IC=20mA VCB=6V, IE=0, f=1MHz MIN TYP 70 25 MAX UNIT 0.1 µA 0.1 µA 240 0.25 1.0 300 7.0 V V MHz pF CLASSIFICATION OF hFE1 RANK hFE1 O 70 ~ 140 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Y 120 ~ 240 2 of 3 QW-R201-087.a TC200 Preliminary NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R201-087.a