Datasheet

UNISONIC TECHNOLOGIES CO.,LTD
2SC3320
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE HIGH SPEED
SWITCHING

FEATURES
* High voltage, high speed switching
* High reliability

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
2SC3320L-x-T3P-T
2SC3320L-x-T3P-T
TO-3P
2SC3320L-x-T3N-T
2SC3320L-x-T3N-T
TO-3PN
Note: Pin Assignment: B: Base C: Collector
E: Emitter

Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tube
Tube
MARKING INFORMATION
PACKAGE
MARKING
TO-3P
TO-3PN
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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2SC3320

NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TC = 25°C)
PARAMETER
Collector Base Voltage
SYMBOL
RATINGS
UNIT
VCBO
500
V
400
V
VCEO
Collector Emitter Voltage
VCEO(SUS)
400
V
Emitter Base Voltage
VEBO
7
V
Collector Current
IC
15
A
Base Current
IB
5
A
Power Dissipation
PD
80
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
SYMBOL
θJC
Junction to Case

UNIT
°C/W
ELECTRICAL SPECIFICATIONS (TC =25°C, Unless Otherwise Specified.)
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Switching Time

RATINGS
1.55
SYMBOL
VCBO
VCEO
VCEO(SUS)
VEBO
VCE (SAT)
VBE (SAT)
ICBO
IEBO
hFE
tON
tSTG
tF
TEST CONDITIONS
ICBO=1mA
ICEO=10mA
IC=0.2A
IEBO=1mA
MIN
500
400
400
7
IC=6A, IB=1.2A
VCBO=500V
VEBO=7V
IC=6A, VCE=5V
10
IC=7.5A, IB1 =1.5A, IB2=-3A
RL=20Ω, PW=20μs, Duty ≤ 2%
TYP
MAX
1
1.5
1
1
45
0.5
1.5
0.15
UNIT
V
V
V
V
V
V
mA
mA
μs
μs
μs
CLASSIFICATION OF hFE
RANK
RANGE
A
10~15
B
15~20
C
20~25
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
D
25~30
E
30~35
F
35~45
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
NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING TIME TEST CIRCUIT
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
DC Current Gain, hFE
Collector Emitter Voltage, VCE (V)

NPN EPITAXIAL SILICON TRANSISTOR
Base and Collector Saturation Voltage
4
3
Safe Operating Area
TC=25℃IC=5IB
30
10
0
10
10
VBE(SAT)
5
3
0.5
0.3
s
1
PW=1ms
DC
1
VCE(SAT)
s
0.5
0.3
0.1
0.05
0.03
0.1
0.01
0.05 0.1
0.3 0.5
1
3
5
10
20
Collector Current, IC (A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TC=25℃
0.05 Single Pulse
0.03
1
3
5
10
30 50 100
300 500 1000
Collector Emitter voltage, VCE (V)
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NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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