MA-COM MA4E1310

MA4E1310
GaAs Flip Chip Schottky Barrier Diode
Rev. V2
Features
•
•
•
•
•
•
Low Series Resistance
Low Capacitance
High Cutoff Frequency
Silicon Nitride Passivation
Polyimide Scratch Protection
Designed for Easy Circuit Insertion
Case Style ODS-1278
Description
M/A-COM's MA4E1310 is a gallium arsenide flip
chip Schottky barrier diode. This diode is fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. This device is fully passivated with silicon nitride and has an additional
layer of polyimide for scratch protection. The
protective coatings prevent damage to the junction during automated or manual handling. The
flip chip configuration is suitable for pick and
place insertion.
Applications
The high cutoff frequency of this diode allows
use through millimeter wave frequencies. Typical applications include single and double balanced mixers in PCN transceivers and radios,
police radar detectors, automotive radar detectors, etc. This device can be used through 110
GHz.
.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4E1310
GaAs Flip Chip Schottky Barrier Diode
Rev. V2
Electrical Specifications @ + 25 °C
Parameters and Test Conditions
Symbol
MA4E1310
Units
Min.
Junction Capacitance at 0V at 1 MHz
Cj
pF
Total Capacitance at 0V at 1 MHz1
Ct
pF
Slope Resistance 2
Rd
Ohms
Forward Voltage at 1mA
Vf1
Volts
Reverse Breakdown Voltage at @ 10uA
Vbr
Volts
SSB Noise Figure ( Estimated )
NF
dB
Typ.
Max.
.010
.025
.040
.045
7
9
.60
.70
.80
4.5
7
6.5
Notes:
1.
Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp.
2.
Slope Resistance = ( Vf1 - Vf2) / (10.5mA - 9.5mA)
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4E1310
GaAs Flip Chip Schottky Barrier Diode
Rev. V2
Forward Current vs Temperature
Forward Current (mA)
100.00
25°C
+125°C
10.00
- 50°C
1.00
0.10
0.01
0.00
0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00
Forward Voltage (V)
Absolute Maximum Ratings 1
Parameter
Absolute Maximum
Operating Temperature
-65 °C to +125 °C
Storage Temperature
-65 °C to +150 °C
Incident LO Power
+20 dBm
Incident RF Power
+20 dBm .
Mounting Temperature
+235°C for 10 seconds
Electrostatic Discharge ( ESD ) Classification
2
Class 0
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Human Body Model
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4E1310
GaAs Flip Chip Schottky Barrier Diode
Rev. V2
Handling Procedures
The following precautions should be observed to avoid damaging these chips:
Cleanliness:
The chips should be handled in a clean environment.
Do not attempt to clean die after installation.
Static Sensitivity: Schottky barrier diodes are ESD sensitive and can be damaged by static
electricity. Proper ESD techniques should be used when handling these devices.
General Handling: The protective polymer coating on the active areas of these die provides scratch
protection, particularly for the metal air bridge which contacts the anode. Die can
be handled with tweezers or vacuum pickups and are suitable for use with
automatic pick-and-place equipment.
Mounting Techniques
This device is designed to be inserted onto hard or soft substrates with the junction side down. It can be
mounted with conductive epoxy or with a low temperature solder preform. The die can also be assembled with
the junction side up, and wire or ribbon bonds made to the pads.
Solder Die Attach:
Solder which does not scavenge gold, such as Indalloy # 2, is recommended. Sn-Pb based solders are not recommended due to solder embrittlement. Do not expose die to a temperature greater than 235°C, or greater than
200°C for longer than 10 seconds. No more than three seconds of scrubbing should be required for attachment.
Epoxy Die Attach:
Assembly can be preheated to 125 - 150 C. Use a minimum amount of epoxy. Cure epoxy as per manufacturer’s schedule. For extended cure times, temperatures should be kept below 200 C.
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4E1310
GaAs Flip Chip Schottky Barrier Diode
Rev. V2
Flip Chip Outline Drawing
B
F
E
MA4E1310
Case Style 1278
A
C
G
D
H
DIM.
A
B
C
D
E
F
G
H
INCHES
MIN.
MAX.
0.013
0.026
0.008
0.007
0.016
0.004
0.006
0.0075
0.014
0.027
0.009
0.008
0.017
0.006
0.007
0.0085
MILLIMETERS
MIN.
MAX.
0.330
0.660
0.203
0.177
0.406
0.101
0.152
0.190
0.335
0.685
0.228
0.203
0.430
0.152
0.177
0.216
5
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.